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IXTP180N10T

型号：

IXTP180N10T

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

155 K

下载PDF手册
TrenchMVTM  
Power MOSFET  
IXTA180N10T  
IXTP180N10T  
VDSS = 100V  
ID25 = 180A  
RDS(on) ≤ 6.4mΩ  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263 (IXTA)  
G
S
Symbol  
Test Conditions  
Maximum Ratings  
(TAB)  
VDSS  
VDGR  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
100  
100  
V
V
TO-220 (IXTP)  
VGSM  
Transient  
± 30  
V
ID25  
ILRMS  
IDM  
TC = 25°C  
Lead Current limit, RMS  
TC = 25°C, pulse width limited by TJM  
180  
75  
450  
A
A
A
G
D
S
(TAB)  
IAR  
EAS  
TC = 25°C  
TC = 25°C  
25  
A
750  
mJ  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
PD  
TC = 25°C  
480  
W
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
Features  
z Ultra-low On Resistance  
z Unclamped Inductive Switching (UIS)  
rated  
z Low package inductance  
- easy to drive and to protect  
z 175 °C Operating Temperature  
TL  
TSOLD  
1.6mm (0.062in.) from case for 10s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
Md  
Mounting torque (TO-220)  
1.13/10  
Nm/lb.in  
Weight  
TO-263  
TO-220  
2.5  
3.0  
g
g
Advantages  
z
Easy to mount  
Space savings  
High power density  
z
z
Symbol  
Test Conditions  
Characteristic Values  
Applications  
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = ± 20V, VDS = 0V  
100  
2.5  
V
V
Automotive  
- Motor Drives  
- 42V Power Bus  
4.5  
± 100 nA  
μA  
100 μA  
- ABS Systems  
z
IDSS  
VDS = VDSS  
VGS = 0V  
5
DC/DC Converters and Off-line UPS  
Primary Switch for 24V and 48V  
z
TJ = 150°C  
Systems  
Distributed Power Architechtures  
RDS(on)  
VGS = 10V, ID = 25A, Notes 1, 2  
5.7  
6.4 mΩ  
z
and VRMs  
Electronic Valve Train Systems  
High Current Switching Applications  
High Voltage Synchronous Recifier  
z
z
z
DS99651A(3/08)  
© 2008 IXYS CORPORATION, All rights reserved  
IXTA180N10T  
IXTP180N10T  
Symbol  
Test Conditions  
Characteristic Values  
TO-263 (IXTA) Outline  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
110  
6900  
923  
162  
33  
Max.  
gfs  
VDS= 10V, ID = 60A, Note 1  
70  
S
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
Ciss  
Coss  
Crss  
td(on)  
tr  
VGS = 0V, VDS = 25V, f = 1MHz  
Resistive Switching Times  
54  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 25A  
td(off)  
tf  
42  
RG = 3.3Ω (External)  
Pins: 1 - Gate  
2 - Drain  
3 - Source 4, TAB - Drain  
31  
Qg(on)  
Qgs  
Qgd  
RthJC  
RthCH  
151  
39  
Dim.  
Millimeter  
Inches  
VGS = 10V, VDS = 0.5 • VDSS, ID = 25A  
Min.  
Max.  
Min. Max.  
A
A1  
4.06  
2.03  
4.83  
2.79  
.160  
.080  
.190  
.110  
45  
b
b2  
0.51  
1.14  
0.99  
1.40  
.020  
.045  
.039  
.055  
0.31 °C/W  
°C/W  
c
c2  
0.46  
1.14  
0.74  
1.40  
.018  
.045  
.029  
.055  
TO-220  
0.50  
D
D1  
8.64  
7.11  
9.65  
8.13  
.340  
.280  
.380  
.320  
E
E1  
e
9.65  
6.86  
2.54  
10.29  
8.13  
BSC  
.380  
.270  
.100 BSC  
.405  
.320  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
L
14.61  
2.29  
1.02  
1.27  
0
15.88  
2.79  
1.40  
1.78  
0.38  
.575  
.090  
.040  
.050  
0
.625  
.110  
.055  
.070  
.015  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
L1  
L2  
L3  
L4  
IS  
VGS = 0V  
180  
A
A
ISM  
VSD  
trr  
Repetitive, pulse width limited by TJM  
IF = 25A, VGS = 0V, Note 1  
450  
R
0.46  
0.74  
.018  
.029  
0.95  
V
TO-220 (IXTP) Outline  
72  
5.1  
ns  
A
IF = 90A, VGS = 0V  
-di/dt = 100A/μs  
VR = 0.5 • VDSS  
IRM  
QRM  
0.18  
μC  
Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
2. On through-hole packages, RDS(on) Kelvin test contact location must be  
5mm or less from the package body.  
Pins: 1 - Gate  
2 - Drain  
3 - Source 4, TAB - Drain  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTA180N10T  
IXTP180N10T  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
180  
160  
140  
120  
100  
80  
300  
275  
250  
225  
200  
175  
150  
125  
100  
75  
VGS = 10V  
VGS = 10V  
9V  
8V  
9V  
8V  
7V  
6V  
7V  
6V  
60  
40  
50  
20  
25  
0
0
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
0
1
2
3
4
5
6
7
VDS - Volts  
VDS - Volts  
Fig. 3. Output Characteristics  
@ 150ºC  
Fig. 4. RDS(on) Normalized to ID = 90A Value  
vs. Junction Temperature  
180  
160  
140  
120  
100  
80  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
VGS = 10V  
VGS = 10V  
9V  
8V  
7V  
6V  
I D = 180A  
I D = 90A  
60  
40  
20  
5V  
0
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 90A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
External Lead Current Limit  
TJ = 175ºC  
VGS = 10V  
15V  
- - - -  
TJ = 25ºC  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0
50  
100  
150  
200  
250  
300  
TC - Degrees Centigrade  
ID - Amperes  
© 2008 IXYS CORPORATION, All rights reserved  
IXTA180N10T  
IXTP180N10T  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
225  
200  
175  
150  
125  
100  
75  
150  
135  
120  
105  
90  
TJ = - 40ºC  
25ºC  
75  
150ºC  
60  
TJ = 150ºC  
25ºC  
- 40ºC  
45  
50  
30  
25  
15  
0
0
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
0
0
1
25  
50  
75  
100 125 150 175 200 225 250  
ID - Amperes  
VGS - Volts  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
275  
250  
225  
200  
175  
150  
125  
100  
75  
VDS = 50V  
I D = 25A  
I G = 10mA  
TJ = 150ºC  
50  
TJ = 25ºC  
25  
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
20  
40  
60  
80  
100  
120  
140  
160  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
1,000.0  
100.0  
10.0  
1.0  
100,000  
10,000  
1,000  
100  
100µs  
25µs  
1ms  
= 1 MHz  
f
RDS( ) Limit  
on  
10ms  
C
iss  
DC, 100ms  
C
C
oss  
TJ = 175ºC  
TC = 25ºC  
Single Pulse  
rss  
0.1  
0
5
10  
15  
20  
25  
30  
35  
40  
10  
100  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
VDS - Volts  
IXTA180N10T  
IXTP180N10T  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
70  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
70  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
RG = 3.3  
Ω
TJ = 25ºC  
VGS = 10V  
VDS = 50V  
RG = 3.3  
Ω
VGS = 10V  
VDS = 50V  
I D = 50A  
I D = 25A  
TJ = 125ºC  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
24 26 28 30 32 34 36 38 40 42 44 46 48 50  
ID - Amperes  
TJ - Degrees Centigrade  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
180  
160  
140  
120  
100  
80  
75  
70  
65  
60  
55  
50  
45  
40  
35  
30  
38  
37  
36  
35  
34  
33  
32  
31  
30  
64  
61  
58  
55  
52  
49  
46  
43  
40  
t f  
t
d(off) - - - -  
RG = 3.3 , VGS = 10V  
t r  
t
d(on) - - - -  
TJ = 125ºC, VGS = 10V  
25A < I D < 50A  
Ω
VDS = 50V  
VDS = 50V  
I D = 50A  
I D = 25A  
60  
40  
20  
I D = 25A, 50A  
0
4
6
8
10  
12  
14  
16  
18  
20  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
38  
37  
36  
35  
34  
33  
32  
31  
30  
64  
160  
140  
120  
100  
80  
250  
220  
190  
160  
130  
100  
70  
t f  
t
d(off) - - - -  
TJ = 125ºC, VGS = 10V  
61  
58  
55  
52  
49  
46  
43  
40  
TJ = 125ºC  
VDS = 50V  
t f  
t
d(off) - - - -  
RG = 3.3 , VGS = 10V  
Ω
25A < I D < 50A  
VDS = 50V  
I D = 25A, 50A  
60  
TJ = 25ºC  
40  
20  
40  
25  
30  
35  
40  
45  
50  
2
4
6
8
10  
12  
14  
16  
18  
20  
RG - Ohms  
ID - Amperes  
© 2008 IXYS CORPORATION, All rights reserved  
IXTA180N10T  
IXTP180N10T  
Fig. 19. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: T_180N10T(61) 2-02-07-B  
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