IXTH24N50L
TO-247 (IXTH) Outline
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 20V, ID = 0.5 • ID25, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
3
7
11
S
Ciss
Coss
Crss
2500
400
pF
pF
pF
∅ P
1
2
3
100
td(on)
tr
td(off)
tf
35
85
ns
ns
ns
ns
Resistive Switching Times
V
GS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
110
75
RG = 4.7Ω (External)
e
Terminals: 1 - Gate
2 - Drain
Qg(on)
Qgs
160
30
nC
nC
nC
3 - Source
VGS = 20V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
Qgd
50
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
RthJC
RthCS
0.31 °C/W
°C/W
0.21
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
Safe-Operating-Area Specification
e
5.20
5.72 0.205 0.225
L
L1
19.81 20.32
4.50
.780 .800
.177
Symbol
SOA
Test Conditions
Characteristic Values
Min.
Typ.
Max.
∅P 3.55
Q
3.65
.140 .144
5.89
6.40 0.232 0.252
VDS = 400V, ID = 0.5A, TC = 60°C
200
W
R
S
4.32
5.49
.170 .216
242 BSC
6.15 BSC
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
IS
VGS = 0V
24
A
A
ISM
VSD
trr
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
96
1.5
V
500
ns
IF = IS, -di/dt = 100A/μs
VR = 100V, VGS = 0V
Note
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
