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IXA55I1200HJ

型号：

IXA55I1200HJ

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

6 页

PDF大小：

156 K

下载PDF手册
IXA55I1200HJ  
preliminary  
VCES  
IC25  
=
=
=
1200V  
84A  
XPT IGBT  
VCE(sat)  
1.8V  
Single IGBT  
Part number  
IXA55I1200HJ  
Backside: isolated  
(C) 2  
(G) 1  
(E) 3  
ISOPLUS247  
Features / Advantages:  
Applications:  
Package:  
● Easy paralleling due to the positive temperature  
coefficient of the on-state voltage  
● Rugged XPT design (Xtreme light Punch Through)  
results in:  
- short circuit rated for 10 µsec.  
- very low gate charge  
● AC motor drives  
● Solar inverter  
● Isolation Voltage:  
● Industry standard outline  
● RoHS compliant  
● Epoxy meets UL 94V-0  
● Soldering pins for PCB mounting  
● Backside: DCB ceramic  
● Reduced weight  
V~  
3600  
● Medical equipment  
● Uninterruptible power supply  
● Air-conditioning systems  
● Welding equipment  
● Switched-mode and resonant-mode  
power supplies  
- low EMI  
- square RBSOA @ 3x Ic  
● Advanced power cycling  
● Thin wafer technology combined with the XPT design  
results in a competitive low VCE(sat)  
● Inductive heating, cookers  
● Pumps, Fans  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20090409  
© 2009 IXYS all rights reserved  
IXA55I1200HJ  
preliminary  
Ratings  
IGBT  
Symbol  
VCES  
Definition  
collector emitter voltage  
Conditions  
min. typ. max. Unit  
TVJ  
=
25°C  
1200  
±20  
±30  
84  
V
V
V
A
A
W
V
V
V
max. DC gate voltage  
VGES  
VGEM  
IC25  
max. transient gate emitter voltage  
collector current  
TC = 25°C  
TC = 80°C  
TC = 25°C  
TVJ = 25°C  
TVJ = 125°C  
TVJ = 25°C  
TVJ = 25°C  
TVJ = 125°C  
IC  
54  
80  
total power dissipation  
P
tot  
290  
2.1  
collector emitter saturation voltage  
VCE(sat)  
IC = 50A; V = 15 V  
1.8  
2.1  
6.0  
GE  
gate emitter threshold voltage  
collector emitter leakage current  
VGE(th)  
ICES  
IC = 2mA; VGE = VCE  
5.5  
6.5  
VCE = VCES; V = 0 V  
0.1 mA  
mA  
GE  
0.1  
gate emitter leakage current  
total gate charge  
IGES  
VGE = ±20 V  
500  
nA  
nC  
ns  
QG(on)  
td(on)  
tr  
VCE = 600 V; V = 15 V; IC = 50 A  
190  
70  
GE  
turn-on delay time  
current rise time  
40  
ns  
inductive load  
VCE 600V; IC = 50A  
TVJ = 125°C  
turn-off delay time  
td(off)  
t f  
250  
100  
4.5  
5.5  
ns  
=
current fall time  
ns  
VGE = ±15 V; RG= 15 Ω  
turn-on energy per pulse  
turn-off energy per pulse  
reverse bias safe operating area  
Eon  
mJ  
mJ  
Eoff  
RBSOA  
ICM  
VGE = ±15 V; RG= 15 Ω  
VCEmax = 1200V  
TVJ = 125°C  
TVJ = 125°C  
A
150  
10  
short circuit safe operating area  
short circuit duration  
SCSOA  
tSC  
VCEmax = 900V  
VCE = 900V; VGE = ±15 V  
RG = 15Ω; non-repetitive  
µs  
A
short circuit current  
ISC  
200  
thermal resistance junction to case  
thermal resistance case to heatsink  
RthJC  
RthCH  
0.43 K/W  
K/W  
0.25  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20090409  
© 2009 IXYS all rights reserved  
IXA55I1200HJ  
preliminary  
Ratings  
Package ISOPLUS247  
Symbol  
IRMS  
Definition  
Conditions  
per terminal  
min. typ. max.  
70  
150  
Unit  
A
RMS current  
TVJ  
-40  
-40  
-40  
°C  
°C  
°C  
g
virtual junction temperature  
operation temperature  
storage temperature  
125  
150  
Top  
Tstg  
Weight  
6
FC  
20  
2.7  
120  
N
mm  
mm  
V
mounting force with clip  
terminal to terminal  
terminal to backside  
dSpp/App  
dSpb/Apb  
creepage distance on surface | striking distance through air  
4.1  
t = 1 second  
V
3600  
3000  
isolation voltage  
ISOL  
50/60 Hz, RMS; IISOL ≤ 1 mA  
t = 1 minute  
V
Product Marking  
Part number  
I = IGBT  
X = XPT IGBT  
A = Gen 1 / std  
55 = Current Rating [A]  
I = Single IGBT  
1200 = Reverse Voltage [V]  
HJ = ISOPLUS247 (3)  
Logo  
IXYS  
ISOPLUS®  
XXXXXXXXX  
Zyyww  
Part No.  
Assembly Line  
abcd  
Assembly Code  
Date Code  
Ordering  
Standard  
Part Number  
Marking on Product  
IXA55I1200HJ  
Delivery Mode  
Tube  
Quantity Code No.  
IXA55I1200HJ  
30  
508000  
TVJ = 150°C  
* on die level  
Equivalent Circuits for Simulation  
IGBT  
V0  
I
R0  
threshold voltage  
slope resistance *  
V0 max  
R0 max  
1.1  
28  
V
mΩ  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20090409  
© 2009 IXYS all rights reserved  
IXA55I1200HJ  
preliminary  
Outlines ISOPLUS247  
A
A2  
E1  
E
Millimeter  
Inches  
Dim.  
min  
4.83  
2.29  
1.91  
1.14  
1.91  
2.92  
0.61  
20.80  
max  
5.21  
min  
max  
A
A1  
A2  
b
0.190  
0.090  
0.075  
0.045  
0.075  
0.115  
0.024  
0.819  
0.620  
0.065  
0.799  
0.620  
0.520  
0.205  
0.100  
0.085  
0.055  
0.087  
0.128  
0.033  
0.840  
0.640  
0.085  
0.815  
0.635  
0.540  
2.54  
2.16  
1.40  
b2  
b4  
c
2.20  
3.24  
0.83  
D
21.34  
16.26  
2.15  
1
2
3
D1 15.75  
D2 1.65  
D3 20.30  
15.75  
E1 13.21  
20.70  
16.13  
13.72  
E
e
L
5.45 BSC  
0.215 BSC  
19.81  
3.81  
5.59  
4.25  
-
20.60  
4.38  
6.20  
5.50  
0.10  
0.780  
0.150  
0.220  
0.167  
-
0.811  
L1  
Q
R
0.172  
0.244  
0.217  
0.004  
W
2x b2  
Die konvexe Form des Substrates ist typ. < 0.04 mm über der  
Kunststoffoberfläche der Bauteilunterseite  
The convex bow of substrate is typ. < 0.04 mm over plastic  
surface level of device bottom side  
e
2x  
c
3x b  
b4  
A1  
Die Gehäuseabmessungen entsprechen dem Typ TO-247 AD  
gemäß JEDEC außer Schraubloch und Lmax  
.
This drawing will meet all dimensions requiarement of JEDEC  
outline TO-247 AD except screw hole and except Lmax  
.
W
(C) 2  
(E) 3  
(G) 1  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20090409  
© 2009 IXYS all rights reserved  
IXA55I1200HJ  
preliminary  
IGBT  
100  
100  
80  
13 V  
11 V  
VGE = 15 V  
VGE = 15 V  
17 V  
19 V  
80  
TVJ = 125°C  
60  
60  
TVJ = 25°C  
IC  
IC  
TVJ = 125°C  
40  
[A]  
[A] 40  
20  
9 V  
20  
0
0
0
1
2
3
0
1
2
3
4
VCE [V]  
VCE [V]  
Fig. 1 Typ. output characteristics  
Fig. 2 Typ. output characteristics  
20  
15  
100  
80  
IC  
= 50 A  
VCE = 600 V  
60  
IC  
VGE  
10  
5
[A]  
40  
[V]  
TVJ = 125°C  
20  
0
TVJ = 25°C  
0
0
40  
80 120 160 200 240  
5
6
7
8
9
10 11 12 13  
QG [nC]  
VGE [V]  
Fig. 3 Typ. tranfer characteristics  
Fig. 4 Typ. turn-on gate charge  
10  
8
6.0  
5.5  
5.0  
4.5  
4.0  
Eon  
Eoff  
RG  
VCE = 600 V  
VGE 15 V  
TVJ = 125°C  
=
15  
=
Eoff  
6
E
E
[mJ]  
4
[mJ]  
IC  
VCE = 600 V  
VGE 15 V  
=
50 A  
Eon  
=
TVJ = 125°C  
2
0
0
20  
40  
60  
IC [A]  
80 100 120  
12  
16  
20  
24  
28  
32  
RG [ ]  
Fig. 5 Typ. switching energy vs. collector current  
Fig. 6 Typ. switching energy vs. gate resistance  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20090409  
© 2009 IXYS all rights reserved  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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