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IXA12IF1200TC

型号：

IXA12IF1200TC

描述：

由于易于并联的导通电压的正温度系数[ Easy paralleling due to the positive temperature coefficient of the on-state voltage ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

157 K

下载PDF手册
IXA12IF1200PB  
preliminary  
VCES  
IC25  
=
=
=
1200V  
20A  
XPT IGBT  
VCE(sat)  
1.8V  
Copack  
Part number  
IXA12IF1200PB  
Backside: collector  
2 (C)  
(G) 1  
3 (E)  
TO-220  
Package:  
Features / Advantages:  
Applications:  
● Easy paralleling due to the positive temperature  
coefficient of the on-state voltage  
● Rugged XPT design (Xtreme light Punch Through)  
results in:  
- short circuit rated for 10 µsec.  
- very low gate charge  
● AC motor drives  
● Solar inverter  
● Industry standard outline  
● RoHS compliant  
● Epoxy meets UL 94V-0  
● Medical equipment  
● Uninterruptible power supply  
● Air-conditioning systems  
● Welding equipment  
● Switched-mode and resonant-mode  
power supplies  
- low EMI  
- square RBSOA @ 3x Ic  
● Thin wafer technology combined with the XPT design  
results in a competitive low VCE(sat)  
● SONIC™ diode  
● Inductive heating, cookers  
● Pumps, Fans  
- fast and soft reverse recovery  
- low operating forward voltage  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20110330a  
© 2011 IXYS all rights reserved  
IXA12IF1200PB  
preliminary  
Ratings  
IGBT  
Symbol  
VCES  
Definition  
collector emitter voltage  
Conditions  
min. typ. max. Unit  
TVJ  
=
25°C  
1200  
±20  
±30  
20  
V
V
V
A
A
W
V
V
V
max. DC gate voltage  
VGES  
VGEM  
IC25  
max. transient gate emitter voltage  
collector current  
TC = 25°C  
TC = 100°C  
TC = 25°C  
TVJ = 25°C  
TVJ = 125°C  
TVJ = 25°C  
TVJ = 25°C  
TVJ = 125°C  
IC  
13  
100  
total power dissipation  
P
tot  
85  
collector emitter saturation voltage  
VCE(sat)  
IC = 10A; V = 15 V  
1.8  
2.1  
5.9  
2.1  
GE  
gate emitter threshold voltage  
collector emitter leakage current  
VGE(th)  
ICES  
IC = 0.3mA; VGE = VCE  
5.4  
6.5  
VCE = VCES; V = 0 V  
0.1 mA  
mA  
GE  
0.1  
gate emitter leakage current  
total gate charge  
IGES  
VGE = ±20 V  
500  
nA  
nC  
ns  
QG(on)  
td(on)  
tr  
VCE = 600 V; V = 15 V; IC = 10 A  
27  
70  
GE  
turn-on delay time  
current rise time  
40  
ns  
inductive load  
VCE 600V; IC = 10A  
TVJ = 125°C  
turn-off delay time  
td(off)  
t f  
250  
100  
1.1  
1.1  
ns  
=
current fall time  
ns  
VGE = ±15 V; RG=100 Ω  
turn-on energy per pulse  
turn-off energy per pulse  
reverse bias safe operating area  
Eon  
mJ  
mJ  
Eoff  
RBSOA  
ICM  
VGE = ±15 V; RG=100 Ω  
VCEmax = 1200V  
TVJ = 125°C  
TVJ = 125°C  
A
30  
10  
short circuit safe operating area  
short circuit duration  
SCSOA  
tSC  
VCEmax = 900V  
VCE = 900V; VGE = ±15 V  
RG =100Ω; non-repetitive  
µs  
A
short circuit current  
ISC  
40  
thermal resistance junction to case  
thermal resistance case to heatsink  
RthJC  
RthCH  
1.5 K/W  
K/W  
0.50  
Diode  
VRRM  
IF25  
max. repetitive reverse voltage  
forward current  
TVJ = 25°C  
TC = 25°C  
TC = 100°C  
TVJ = 25°C  
TVJ = 125°C  
TVJ = 25°C  
TVJ = 125°C  
1200  
V
A
22  
14  
IF100  
VF  
A
forward voltage  
IF = 10A  
VR = VRRM  
2.20  
V
1.95  
V
reverse current  
IR  
*
mA  
mA  
µC  
A
* not applicable, see Ices value above  
reverse recovery charge  
*
1.3  
Qrr  
VR = 600 V  
max. reverse recovery current  
reverse recovery time  
IRM  
10.5  
350  
0.35  
-diF /dt = -250 A/µs  
TVJ = 125°C  
trr  
ns  
mJ  
IF = 10A; V = 0 V  
GE  
reverse recovery energy  
Erec  
RthJC  
RthCH  
thermal resistance junction to case  
thermal resistance case to heatsink  
1.8 K/W  
K/W  
0.50  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20110330a  
© 2011 IXYS all rights reserved  
IXA12IF1200PB  
preliminary  
Ratings  
Package TO-220  
Symbol  
IRMS  
Definition  
Conditions  
per terminal  
min. typ. max.  
35  
150  
Unit  
A
RMS current  
TVJ  
-40  
-40  
-40  
°C  
°C  
°C  
g
virtual junction temperature  
operation temperature  
storage temperature  
125  
150  
Top  
Tstg  
Weight  
2
MD  
0.4  
20  
0.6 Nm  
60  
mounting torque  
F
N
mounting force with clip  
C
Product Marking  
Part number  
I = IGBT  
X = XPT IGBT  
A = Gen 1 / std  
12 = Current Rating [A]  
IF = Copack  
1200 = Reverse Voltage [V]  
PB = TO-220AB (3)  
Part Number  
Logo  
XXXXXX  
Zyyww  
Assembly Line  
Lot #  
abcdef  
Date Code  
Ordering  
Standard  
Part Number  
Marking on Product  
IXA12IF1200PB  
Delivery Mode  
Tube  
Quantity Code No.  
IXA12IF1200PB  
50  
507428  
Similar Part  
Package  
TO-247AD (3)  
Voltage class  
IXA12IF1200HB  
IXA12IF1200TC  
1200  
1200  
TO-268AA (D3Pak) (2)  
TVJ = 150°C  
Diode  
* on die level  
Equivalent Circuits for Simulation  
IGBT  
V0  
I
R0  
threshold voltage  
slope resistance *  
V0 max  
R0 max  
1.1  
1.25  
85  
V
153  
mΩ  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20110330a  
© 2011 IXYS all rights reserved  
IXA12IF1200PB  
preliminary  
Outlines TO-220  
Dim.  
Millimeter  
Min.  
Inches  
Max. Min.  
Max.  
A
A
A1  
A2  
4.32  
1.14  
2.29  
4.82  
1.39  
2.79  
0.170 0.190  
0.045 0.055  
A1  
E
0.090  
0.110  
b
b2  
0.64  
1.15  
1.01  
1.65  
0.025 0.040  
0.045 0.065  
ØP  
4
C
D
0.35  
14.73 16.00  
0.56  
0.014 0.022  
0.580 0.630  
1
2
3
E
9.91 10.66  
0.390 0.420  
e
H1  
2.54  
5.85  
BSC  
6.85  
0.100  
0.230 0.270  
BSC  
3x b2  
3x b  
L
L1  
12.70 13.97  
2.79  
0.500 0.550  
0.110 0.230  
5.84  
ØP  
Q
3.54  
2.54  
4.08  
3.18  
0.139 0.161  
0.100 0.125  
C
2x e  
A2  
2 (C)  
3 (E)  
(G) 1  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20110330a  
© 2011 IXYS all rights reserved  
IXA12IF1200PB  
preliminary  
IGBT  
20  
20  
16  
12  
8
20  
16  
12  
8
VGE = 15 V  
VGE = 15 V  
13 V  
11 V  
17 V  
19 V  
16  
IC  
TVJ = 125°C  
12  
IC  
IC  
TVJ = 25°C  
[A]  
TVJ = 125°C  
[A]  
[A]  
8
9 V  
4
0
4
4
TVJ = 125°C  
TVJ = 25°C  
0
0
0
1
2
3
0
1
2
3
4
5
6
7
8
9
10 11 12 13  
VGE [V]  
Fig. 3 Typ. tranfer characteristics  
VCE [V]  
VCE [V]  
Fig. 1 Typ. output characteristics  
Fig. 2 Typ. output characteristics  
20  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
1.8  
1.6  
1.4  
RG = 100  
IC = 10 A  
IC =  
VCE = 600 V  
VGE 15 V  
TVJ = 125°C  
10 A  
Eon  
VCE = 600 V  
Eon  
VCE = 600 V  
VGE  
= 15 V  
=
15  
TVJ = 125°C  
VGE  
E
10  
E
Eoff  
[V]  
[mJ] 1.2  
[mJ]  
Eoff  
5
0
1.0  
0.8  
80  
120  
160  
200  
240  
0
10  
20  
30  
0
4
8
12  
16  
20  
IC [A]  
QG [nC]  
RG [ ]  
Fig. 4 Typ. turn-on gate charge  
Fig. 5 Typ. switching energy  
vs. collector current  
Fig. 6 Typ. switching energy  
vs. gate resistance  
Fig. 7 Typ. transient thermal impedance junction to case  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20110330a  
© 2011 IXYS all rights reserved  
IXA12IF1200PB  
preliminary  
Diode  
20  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
24  
20  
16  
12  
8
TVJ = 125°C  
VR = 600 V  
TVJ = 125°C  
VR = 600 V  
20 A  
20 A  
15  
IF  
Qrr  
IRM  
[A]  
10 A  
5 A  
10 A  
5 A  
10  
[A]  
[μC]  
TVJ = 125°C  
5
TVJ  
= 25°C  
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0  
200 250 300 350 400 450 500  
200 250 300 350 400 450 500  
VF [V]  
diF /dt [A/μs]  
diF /dt [A/μs]  
Fig. 1 Typ. forward current  
versus VF  
Fig. 2 Typical reverse recov. charge  
Qrr versus. diF /dt  
Fig.3 Typ: peak reverse current  
IRR versus diF /dt  
500  
0.6  
20 A  
TVJ = 125°C  
VR = 600 V  
TVJ = 125°C  
VR = 600 V  
20 A  
10 A  
5 A  
0.5  
0.4  
0.3  
0.2  
0.1  
400  
300  
200  
100  
10 A  
trr  
Erec  
[ns]  
[mJ]  
5 A  
200 250 300 350 400 450 500  
200 250 300 350 400 450 500  
diF /dt [A/μs]  
diF /dt [A/μs]  
Fig. 5 Typ. recovery time  
trr versus diF /dt  
Fig. 6 Typ. recovery energy  
Erec vs. diF /dt  
Fig. 4 Dynamic parameters  
Qrr, IRM versus TVJ  
Fig. 7 Typ. transient thermal impedance junction to case  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20110330a  
© 2011 IXYS all rights reserved  
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