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IXTY44N10T-TRL

型号：

IXTY44N10T-TRL

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

224 K

下载PDF手册
TrenchTM  
Power MOSFET  
VDSS = 100V  
ID25 = 44A  
RDS(on) 30m  
IXTY44N10T  
IXTP44N10T  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-252  
(IXTY)  
G
S
D (Tab)  
TO-220  
(IXTP)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 175C  
TJ = 25C to 175C, RGS = 1M  
100  
100  
V
V
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
G
D
S
D (Tab)  
ID25  
ILRMS  
TC = 25C  
Lead Current Limit, (RMS) (TO-252)  
44  
25  
A
A
IDM  
TC = 25C, Pulse Width Limited by TJM  
110  
A
G
S
= Gate  
= Source Tab  
D
=
=
Drain  
Drain  
IA  
TC = 25C  
TC = 25C  
10  
A
EAS  
250  
mJ  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 175C  
TC = 25C  
12  
V/ns  
W
Features  
130  
International Standard Packages  
175°C Operating Temperature  
Avalanche Rated  
Low RDS(on)  
High Current Handling Capability  
TJ  
-55 ... +175  
175  
C  
C  
C  
TJM  
Tstg  
-55 ... +175  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Md  
Mounting Torque (TO-220)  
1.13 / 10  
Nm/lb.in.  
Advantages  
Weight  
TO-252  
TO-220  
0.35  
3.00  
g
g
Easy to Mount  
Space Savings  
High Power Density  
Symbol  
Test Conditions  
Characteristic Values  
Applications  
(TJ = 25C Unless Otherwise Specified)  
Min. Typ.  
Max.  
Automotive  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250A  
VDS = VGS, ID = 25A  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
100  
2.5  
V
V
- Motor Drives  
- 24 / 48V Power Bus  
- ABS Systems  
DC/DC Converters and Off-Line UPS  
Primary- Side Switch  
High Current Switching Applications  
4.5  
            100 nA  
A  
IDSS  
1
TJ = 150C  
VGS = 10V, ID = 0.5 • ID25, Notes 1, 2  
200  A  
30 m  
RDS(on)  
DS99646B(11/18)  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXTY44N10T  
IXTP44N10T  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
TO-252 AA Outline  
A
E
b3  
(TJ = 25C, Unless Otherwise Specified)  
c2  
L3  
4
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
13  
21  
S
A1  
A2  
H
L4  
1
2
3
Ciss  
Coss  
Crss  
1567  
200  
47  
pF  
pF  
pF  
L1  
b2  
L
c
1 - Gate  
2,4 - Drain  
3 - Source  
e
L2  
e1  
e1  
0
5.55MIN  
OPTIONAL  
td(on)  
tr  
td(off)  
tf  
21  
47  
36  
32  
ns  
ns  
ns  
ns  
6.50MIN  
Resistive Switching Times  
4
V
GS = 10V, VDS = 0.5 • VDSS, ID = 10A  
6.40  
2.28  
2.85MIN  
1.25MIN  
RG = 18(External)  
BOTTOM  
VIEW  
LAND PATTERN RECOMMENDATION  
Qg(on)  
Qgs  
27.4  
8.8  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
9.0  
RthJC  
RthCH  
1.15 C/W  
C/W  
TO-220  
0.50  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min. Typ.  
Max.  
IS  
VGS = 0V  
44  
A
A
V
TO-220 Outline  
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = 22A, VGS = 0V, Note 1  
140  
1.1  
A
E
oP  
A1  
H1  
Q
trr  
60  
4.8  
ns  
A
IF = 0.5 • ID25, VGS = 0V  
D2  
E1  
D
IRM  
QRM  
-di/dt = 100A/s  
VR = 50V  
D1  
144  
nC  
A2  
EJECTOR  
PIN  
L1  
L
e
c
3X b  
3X b2  
e1  
1 - Gate  
2,4 - Drain  
3 - Source  
Notes: 1. Pulse test, t 300s, duty cycle, d  2%.  
2. On through-hole packages, RDS(on) Kelvin test contact  
location must be 5mm or less from the package body.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTY44N10T  
IXTP44N10T  
Fig. 1. Output Characteristics @ TJ = 25oC  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
45  
40  
35  
30  
25  
20  
15  
10  
5
120  
100  
80  
60  
40  
20  
0
V
= 10V  
9V  
GS  
V
= 10V  
GS  
8V  
7V  
9V  
8V  
7V  
6V  
6V  
0
0
5
10  
15  
20  
0
0.0  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 22A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150oC  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
45  
40  
35  
30  
25  
20  
15  
10  
5
V
= 10V  
9V  
GS  
V
= 10V  
GS  
8V  
7V  
I
= 44A  
D
I
= 22A  
D
6V  
5V  
0
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
3.2  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 22A Value vs.  
Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
4.2  
3.8  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
V
= 10V  
15V  
GS  
T = 175oC  
J
External Lead Current Limit ( TO-252)  
T = 25oC  
J
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
110  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
ID - Amperes  
TC - Degrees Centigrade  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXTY44N10T  
IXTP44N10T  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
70  
60  
50  
40  
30  
20  
10  
0
30  
25  
20  
15  
10  
5
T
J
= - 40oC  
25oC  
T
= - 40oC  
25oC  
J
150oC  
150oC  
0
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
1.5  
40  
0
0
1
10  
20  
30  
40  
50  
60  
70  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
120  
100  
80  
60  
40  
20  
0
10  
9
8
7
6
5
4
3
2
1
0
V
= 50V  
DS  
I
I
= 22A  
D
G
= 1mA  
T
= 150oC  
J
T
= 25oC  
J
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1.3  
1.4  
4
8
12  
16  
20  
24  
QG - NanoCoulombs  
VSD - Volts  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
1,000  
100  
10  
10,000  
1,000  
100  
= 1 MHz  
f
25μs  
100μs  
R
Limit  
DS(on)  
C
1ms  
iss  
10ms  
DC  
C
C
oss  
rss  
1
TJ = 175oC  
TC = 25oC  
Single Pulse  
10  
0
0
5
10  
15  
20  
25  
30  
35  
10  
100  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTY44N10T  
IXTP44N10T  
Fig. 13. Resistive Turn-on Rise Time vs.  
Junction Temperature  
Fig. 14. Resistive Turn-on Rise Time vs.  
Drain Current  
80  
70  
60  
50  
40  
30  
20  
10  
90  
80  
70  
60  
50  
40  
30  
20  
10  
R
= 18Ω ,V = 10V  
R
G
= 18Ω  
  
V
= 10V  
GS  
G
GS  
V
= 50V  
V
= 50V  
DS  
DS  
T = 25oC  
J
I
= 30A  
D
T = 125oC  
J
I
= 10A  
D
10  
12  
14  
16  
18  
20  
22  
24  
26  
28  
30  
25  
15  
10  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
ID - Amperes  
TJ - Degrees Centigrade  
Fig. 16. Resistive Turn-off Switching Times vs.  
Junction Temperature  
Fig. 15. Resistive Turn-on Switching Times vs.  
Gate Resistance  
130  
110  
90  
40  
38  
55  
50  
45  
40  
35  
30  
25  
20  
t r  
td(on)  
t f  
td(off)  
36  
34  
32  
30  
28  
26  
24  
TJ = 125oC, V = 10V  
36  
32  
28  
24  
20  
16  
GS  
R
= 18Ω, V = 10V  
GS  
G
V
= 50V  
DS  
V
= 50V  
DS  
I
= 10A  
D
I
= 30A  
D
I
= 10A  
D
70  
50  
I
= 30A  
D
30  
10  
20  
25  
30  
35  
40  
45  
50  
55  
60  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Resistive Turn-off Switching Times vs.  
Drain Current  
Fig. 18. Resistive Turn-off Switching Times vs.  
Gate Resistance  
100  
90  
80  
70  
60  
50  
40  
30  
20  
110  
100  
90  
34  
33  
32  
31  
30  
29  
28  
27  
26  
52  
48  
44  
40  
36  
32  
28  
24  
20  
t f  
td(off)  
t f  
td(off)  
R
= 18Ω, VGS = 10V  
G
T = 125oC, V = 10V  
J
GS  
VDS = 50V  
V
= 50V  
DS  
T = 125oC  
J
80  
70  
I
= 10A  
D
60  
50  
T = 25oC  
J
I
= 30A  
40  
D
40  
30  
12  
14  
16  
18  
20  
22  
24  
26  
28  
30  
15  
20  
25  
30  
35  
45  
50  
55  
60  
ID - Amperes  
RG - Ohms  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXTY44N10T  
IXTP44N10T  
Fig. 19. Maximum Transient Thermal Impedance  
10  
1
0.1  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF:T_44N10T(1V)02-08-10-B  
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