IXTH12N100L
Symbol
TestConditions
Characteristic Values
TO-247 (IXTH) Outline
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 20V, ID = 0.5 • IDSS, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
3.0
5.0
S
Ciss
Coss
Crss
2500
300
95
pF
pF
pF
∅P
1
2
3
td(on)
tr
td(off)
tf
30
55
ns
ns
ns
ns
Resistive Switching Times
V
GS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS
110
65
RG = 4.7Ω (External)
e
Terminals: 1 - Gate
2 - Drain
Qg(on)
Qgs
155
35
nC
nC
nC
3 - Source
VGS = 20V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS
Dim.
Millimeter
Inches
Min. Max.
Min.
Max.
Qgd
55
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
RthJC
RthCS
0.31 °C/W
°C/W
0.21
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
Safe-Operating-AreaSpecification
e
5.20
5.72 0.205 0.225
L
L1
19.81 20.32
4.50
.780 .800
.177
Symbol
SOA
TestConditions
Characteristic Values
Min.
Typ.
Max.
∅P 3.55
Q
3.65
.140 .144
5.89
6.40 0.232 0.252
VDS = 800V, ID = 0.25A, TC = 60°C
200
W
R
S
4.32
5.49
.170 .216
242 BSC
6.15 BSC
Source-DrainDiode
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
IS
VGS = 0V
12
A
A
ISM
VSD
trr
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
48
1.5
V
1000
ns
IF = IS, -di/dt = 100A/μs, VR =100V, VGS = 0V
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,835,592
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405 B2 6,759,692
6,710,463
6,727,585
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
