请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXTH160N15T

型号：

IXTH160N15T

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

124 K

下载PDF手册
Preliminary Technical Information  
TrenchHVTM  
Power MOSFET  
IXTH160N15T  
VDSS = 150  
ID25 = 160  
RDS(on) ≤ 9.6 mΩ  
V
A
N-Channel Enhancement Mode  
Avalanche Rated  
Symbol  
Test Conditions  
Maximum Ratings  
TO-247  
VDSS  
VDGR  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C; RGS = 1MΩ  
150  
150  
V
V
VGSM  
Transient  
± 30  
V
ID25  
ILRMS  
IDM  
TC = 25°C  
Lead Current Limit, RMS  
TC = 25°C, pulse width limited by TJM  
160  
75  
430  
A
A
A
G
(TAB)  
D
S
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
IA  
EAS  
TC = 25°C  
TC = 25°C  
5
1.0  
A
J
dv/dt  
Pd  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C  
10  
V/ns  
W
TC = 25°C  
830  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
Md  
Mounting torque  
1.13 / 10 Nm/lb.in.  
Weight  
6
g
Features  
z Unclamped Inductive Switching (UIS)  
rated  
z Low package inductance  
- easy to drive and to protect  
z 175 °C Operating Temperature  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
Advantages  
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 μA  
VDS = VGS, ID = 1 mA  
VGS = ± 20 V, VDS = 0 V  
150  
V
V
Easy to mount  
Space savings  
z
2.5  
5.0  
z
High power density  
± 200  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
300  
μA  
μA  
TJ = 150°C  
RDS(on)  
VGS = 10 V, ID = 0.5 • ID25, Note 1  
8.0  
9.6 mΩ  
DS99840 (06/07)  
© 2007 IXYS CORPORATION, All rights reserved  
IXTH160N15T  
Symbol  
Test Conditions  
Characteristic Values  
TO-247AD Outline  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
VDS= 10V; ID = 0.5 • ID25, Note 1  
65  
105  
S
Ciss  
Coss  
Crss  
8800  
1170  
150  
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1 MHz  
1
2
3
td(on)  
tr  
td(off)  
tf  
Resistive Switching Times  
VGS = 15V, VDS = 0.5 • VDSS, ID = 0.5 ID25  
RG = 2.0Ω (External)  
21  
21  
60  
31  
ns  
ns  
ns  
ns  
Terminals: 1 - Gate  
3 - Source  
2 - Drain  
Tab - Drain  
Qg(on)  
Qgs  
160  
43  
nC  
nC  
nC  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
VGS= 10V, VDS = 0.5 • VDSS, ID = 25A  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Qgd  
46  
RthJC  
RthCS  
0.18 °C/W  
°C/W  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
0.21  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
Source-Drain Diode  
20.80 21.46  
15.75 16.26  
Symbol  
Test Conditions  
Characteristic Values  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
160  
430  
1.2  
.780 .800  
.177  
IS  
VGS = 0V  
A
A
ÆP 3.55  
Q
3.65  
.140 .144  
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
ISM  
VSD  
trr  
Pulse width limited by TJM  
IF = 50A, VGS = 0V, Note 1  
V
IF = 80A, -di/dt = 200A/μs  
115  
ns  
VR = 75V, VGS = 0V  
Notes: 1. Pulse test, t ≤ 300 ms, duty cycle, d ≤ 2 %  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from data gathered during objective characterizations of preliminary engineering lots; but  
also may yet contain some information supplied during a pre-production design evaluation. IXYS  
reserves the right to change limits, test conditions, and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXTH160N15T  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
160  
140  
120  
100  
80  
350  
300  
250  
200  
150  
100  
50  
V
= 10V  
V
= 10V  
GS  
GS  
9V  
8V  
9V  
8V  
7V  
6V  
7V  
60  
6V  
5V  
40  
5V  
20  
0
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
0
1
2
3
4
5
6
7
8
9
10  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 80A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 150ºC  
160  
140  
120  
100  
80  
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
V
= 10V  
GS  
V
= 10V  
9V  
8V  
7V  
GS  
6V  
I
= 160A  
D
I
= 80A  
D
60  
5V  
40  
20  
0
0
0.4  
0.8  
1.2  
1.6  
2
2.4  
2.8  
3.2  
3.6  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 80A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
V
= 10V  
15V  
GS  
External Lead Current Limit  
- - - -  
T = 175ºC  
J
T = 25ºC  
J
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0
40  
80  
120  
160  
200  
240  
280  
320  
ID - Amperes  
TC - Degrees Centigrade  
© 2007 IXYS CORPORATION, All rights reserved  
IXTH160N15T  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
200  
180  
160  
140  
120  
100  
80  
180  
160  
140  
120  
100  
80  
T
J
= - 40ºC  
25ºC  
T
J
= 150ºC  
150ºC  
25ºC  
- 40ºC  
60  
60  
40  
40  
20  
20  
0
0
0
20  
40  
60  
80  
100 120 140 160 180 200  
3.5  
4
4.5  
5
5.5  
6
6.5  
1.3  
40  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
300  
250  
200  
150  
100  
50  
10  
9
8
7
6
5
4
3
2
1
0
V
= 75V  
DS  
I
I
= 25A  
D
G
= 10mA  
T
= 150ºC  
J
T
= 25ºC  
J
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
1.2  
0
20  
40  
60  
80  
100  
120  
140  
160  
QG - NanoCoulombs  
VSD - Volts  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
100,000  
10,000  
1,000  
100  
1.00  
0.10  
0.01  
0.00  
f = 1 MHz  
C
C
iss  
oss  
C
rss  
0
5
10  
15  
20  
25  
30  
35  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
VDS - Volts  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTH160N15T  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
24  
22  
20  
18  
16  
14  
12  
10  
24  
22  
20  
18  
16  
14  
12  
10  
R
= 2  
Ω
G
T = 25ºC  
V
V
= 15V  
= 75V  
J
GS  
DS  
R
= 2  
Ω
G
V
V
= 15V  
= 75V  
GS  
DS  
I D = 40A  
I D = 80A  
T = 125ºC  
J
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
40  
45  
50  
55  
60  
65  
70  
75  
80  
ID - Amperes  
TJ - Degrees Centigrade  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
42  
27  
26  
25  
24  
23  
22  
21  
20  
19  
40  
110  
100  
90  
t r  
td(on)  
- - - -  
t f  
R
td(off)  
- - - -  
38  
34  
30  
26  
22  
18  
14  
10  
36  
32  
28  
24  
20  
16  
TJ = 125ºC, V = 15V  
= 2  
,
V
= 15V  
GS  
Ω
G
GS  
V
= 75V  
V
= 75V  
DS  
DS  
I
= 80A, 40A  
D
I
= 40A  
D
80  
I
= 80A  
D
70  
60  
50  
2
3
4
5
6
7
8
9
10  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
40  
36  
32  
28  
24  
20  
16  
110  
100  
90  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
260  
tf  
R
td(off)  
240  
220  
200  
180  
160  
140  
120  
100  
80  
- - - -  
= 2 , VGS = 15V  
Ω
G
T = 25ºC  
J
VDS = 75V  
I
= 40A  
D
TJ = 125ºC  
I
= 80A  
80  
D
70  
T = 25ºC  
J
tf  
td(off)  
- - - -  
T = 125ºC, VGS = 15V  
J
60  
TJ = 125ºC  
V
= 75V  
7
DS  
50  
60  
40  
45  
50  
55  
60  
65  
70  
75  
80  
2
3
4
5
6
8
9
10  
RG - Ohms  
ID - Amperes  
IXYS REF: T_160N15T(8W) 06-07-07  
© 2007 IXYS CORPORATION, All rights reserved  
厂商 型号 描述 页数 下载

IXYS

 		IXTA-200N085T N沟道增强模式额定雪崩[ N-Channel Enhancement Mode Avalanche Rated ] 5 页

LITTELFUSE

 		IXTA02N250 [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN ] 5 页

IXYS

 		IXTA02N250HV [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC PACKAGE-3 ] 5 页

LITTELFUSE

 		IXTA02N250HV [ Power Field-Effect Transistor, ] 6 页

IXYS

 		IXTA02N250HV-TRL [ Power Field-Effect Transistor, ] 5 页

IXYS

 		IXTA02N450HV 高电压功率MOSFET[ High Voltage Power MOSFETs ] 5 页

IXYS

 		IXTA05N100 高电压的MOSFET[ High Voltage MOSFET ] 4 页

IXYS

 		IXTA05N100-TRL [ Power Field-Effect Transistor, ] 5 页

LITTELFUSE

 		IXTA05N100HVTRL [ Power Field-Effect Transistor, 0.75A I(D), 1000V, 17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 2 PIN ] 4 页

IXYS

 		IXTA05N100P [ Fast Intrinsic Diode ] 7 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.187823s