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IXA60IF1200NA

型号：

IXA60IF1200NA

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

154 K

下载PDF手册
IXA60IF1200NA  
VCES  
IC25  
=
=
=
1200V  
88A  
XPT IGBT  
VCE(sat)  
1.8V  
Copack  
Part number  
IXA60IF1200NA  
Backside: isolated  
C (3)  
(G) 2  
E (1+4)  
SOT-227B (minibloc)  
Features / Advantages:  
Applications:  
Package:  
● Easy paralleling due to the positive temperature  
coefficient of the on-state voltage  
● Rugged XPT design (Xtreme light Punch Through)  
results in:  
- short circuit rated for 10 µsec.  
- very low gate charge  
- low EMI  
- square RBSOA @ 3x Ic  
● Thin wafer technology combined with the XPT design  
results in a competitive low VCE(sat)  
● SONIC™ diode  
● AC motor drives  
● Solar inverter  
● Isolation Voltage:  
● Industry standard outline  
● RoHS compliant  
● Epoxy meets UL 94V-0  
● Base plate: Copper  
internally DCB isolated  
● Advanced power cycling  
● Either emitter terminal can be used  
as main or Kelvin emitter  
V~  
3000  
● Medical equipment  
● Uninterruptible power supply  
● Air-conditioning systems  
● Welding equipment  
● Switched-mode and resonant-mode  
power supplies  
● Inductive heating, cookers  
● Pumps, Fans  
- fast and soft reverse recovery  
- low operating forward voltage  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20140708a  
© 2014 IXYS all rights reserved  
IXA60IF1200NA  
Ratings  
IGBT  
Symbol  
VCES  
Definition  
collector emitter voltage  
Conditions  
min. typ. max. Unit  
TVJ  
=
25°C  
1200  
±20  
±30  
88  
V
V
V
A
A
W
V
V
V
max. DC gate voltage  
VGES  
VGEM  
IC25  
max. transient gate emitter voltage  
collector current  
TC = 25°C  
TC = 80°C  
TC = 25°C  
TVJ = 25°C  
TVJ = 125°C  
TVJ = 25°C  
TVJ = 25°C  
TVJ = 125°C  
IC  
56  
80  
total power dissipation  
P
tot  
290  
2.1  
collector emitter saturation voltage  
VCE(sat)  
IC = 50A; V = 15 V  
1.8  
2.1  
5.9  
GE  
gate emitter threshold voltage  
collector emitter leakage current  
VGE(th)  
ICES  
IC = 2mA; VGE = VCE  
5.4  
6.5  
VCE = VCES; V = 0 V  
0.1 mA  
mA  
GE  
0.1  
gate emitter leakage current  
total gate charge  
IGES  
VGE = ±20 V  
500  
nA  
nC  
ns  
QG(on)  
td(on)  
tr  
VCE = 600 V; V = 15 V; IC = 50 A  
190  
70  
GE  
turn-on delay time  
current rise time  
40  
ns  
inductive load  
VCE 600V; IC = 50A  
TVJ = 125°C  
turn-off delay time  
td(off)  
t f  
250  
100  
4.5  
5.5  
ns  
=
current fall time  
ns  
VGE = ±15 V; RG= 15 Ω  
turn-on energy per pulse  
turn-off energy per pulse  
reverse bias safe operating area  
Eon  
mJ  
mJ  
Eoff  
RBSOA  
ICM  
VGE = ±15 V; RG= 15 Ω  
VCEmax = 1200V  
TVJ = 125°C  
TVJ = 125°C  
A
150  
10  
short circuit safe operating area  
short circuit duration  
SCSOA  
tSC  
VCEmax =1200V  
VCE = 900V; VGE = ±15 V  
RG = 15Ω; non-repetitive  
µs  
A
short circuit current  
ISC  
200  
thermal resistance junction to case  
thermal resistance case to heatsink  
RthJC  
RthCH  
0.43 K/W  
K/W  
0.10  
Diode  
VRRM  
IF25  
max. repetitive reverse voltage  
forward current  
TVJ = 25°C  
TC = 25°C  
TC = 80°C  
TVJ = 25°C  
TVJ = 125°C  
TVJ = 25°C  
TVJ = 125°C  
1200  
85  
V
A
IF80  
51  
A
forward voltage  
VF  
IF = 60A  
VR = VRRM  
2.20  
V
1.95  
V
reverse current  
IR  
*
mA  
mA  
µC  
A
* not applicable, see Ices at IGBT  
reverse recovery charge  
*
8
Qrr  
VR = 600 V  
max. reverse recovery current  
reverse recovery time  
IRM  
60  
-diF /dt = E+03 A/µs  
TVJ = 125°C  
trr  
350  
2.5  
ns  
mJ  
IF = 60A; V = 0 V  
GE  
reverse recovery energy  
Erec  
RthJC  
RthCH  
thermal resistance junction to case  
thermal resistance case to heatsink  
0.6 K/W  
K/W  
0.10  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20140708a  
© 2014 IXYS all rights reserved  
IXA60IF1200NA  
Ratings  
Package SOT-227B (minibloc)  
Symbol  
IRMS  
Definition  
Conditions  
per terminal  
min. typ. max.  
150  
Unit  
1)  
A
°C  
°C  
°C  
g
RMS current  
TVJ  
-40  
-40  
-40  
150  
125  
150  
virtual junction temperature  
operation temperature  
storage temperature  
Top  
Tstg  
Weight  
30  
MD  
1.1  
1.1  
1.5 Nm  
mounting torque  
terminal torque  
M
1.5 Nm  
T
terminal to terminal  
terminal to backside  
dSpp/App  
dSpb/Apb  
10.5  
8.6  
3.2  
mm  
mm  
V
creepage distance on surface | striking distance through air  
6.8  
t = 1 second  
V
3000  
2500  
isolation voltage  
ISOL  
50/60 Hz, RMS; IISOL ≤ 1 mA  
t = 1 minute  
V
1)  
IRMS is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product  
with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact.  
Part description  
Product Marking  
I = IGBT  
Part No.  
X = XPT IGBT  
A = Gen 1 / std  
Logo  
XXXXX  
®
60 = Current Rating [A]  
IF = Copack  
Zyyww  
abcd  
1200 = Reverse Voltage [V]  
NA = SOT-227B (minibloc)  
Assembly Line  
DateCode  
Assembly Code  
Ordering  
Standard  
Ordering Number  
IXA60IF1200NA  
Marking on Product  
Delivery Mode  
Tube  
Quantity Code No.  
10 508765  
IXA60IF1200NA  
Similar Part  
Package  
Voltage class  
IXA70I1200NA  
SOT-227B (minibloc)  
1200  
TVJ = 150°C  
Diode  
* on die level  
Equivalent Circuits for Simulation  
IGBT  
V0  
I
R0  
threshold voltage  
slope resistance *  
V0 max  
R0 max  
1.1  
28  
1.25  
14.2  
V
mΩ  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20140708a  
© 2014 IXYS all rights reserved  
IXA60IF1200NA  
Outlines SOT-227B (minibloc)  
C (3)  
(G) 2  
E (1+4)  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20140708a  
© 2014 IXYS all rights reserved  
IXA60IF1200NA  
IGBT  
100  
100  
80  
13 V  
VGE = 15 V  
11 V  
VGE = 15 V  
17 V  
19 V  
80  
TVJ = 125°C  
60  
60  
TVJ = 25°C  
IC  
IC  
TVJ = 125°C  
40  
[A]  
[A] 40  
20  
9 V  
20  
0
0
0
1
2
3
0
1
2
3
4
VCE [V]  
VCE [V]  
Fig. 1 Typ. output characteristics  
Fig. 2 Typ. output characteristics  
20  
15  
100  
80  
IC  
= 50 A  
VCE = 600 V  
60  
IC  
VGE  
10  
5
[A]  
40  
[V]  
TVJ = 125°C  
20  
0
TVJ = 25°C  
0
0
40  
80 120 160 200 240  
5
6
7
8
9
10 11 12 13  
QG [nC]  
VGE [V]  
Fig. 3 Typ. tranfer characteristics  
Fig. 4 Typ. turn-on gate charge  
10  
8
6.0  
5.5  
5.0  
4.5  
4.0  
Eon  
Eoff  
RG  
VCE = 600 V  
VGE 15 V  
TVJ = 125°C  
=
15  
=
Eoff  
6
E
E
[mJ]  
4
[mJ]  
IC  
VCE = 600 V  
VGE 15 V  
=
50 A  
Eon  
=
TVJ = 125°C  
2
0
0
20  
40  
60  
IC [A]  
80 100 120  
12  
16  
20  
24  
28  
32  
RG [ ]  
Fig. 5 Typ. switching energy vs. collector current  
Fig. 6 Typ. switching energy vs. gate resistance  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20140708a  
© 2014 IXYS all rights reserved  
IXA60IF1200NA  
Diode  
120  
14  
12  
10  
8
TVJ = 125°C  
VR = 600 V  
100  
120 A  
60 A  
80  
IF  
Qrr  
60  
[A]  
40  
[µC]  
6
30 A  
TVJ = 125°C  
4
TVJ  
=
25°C  
20  
2
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
600  
700  
800  
900 1000 1100 1200 1300  
VF [V]  
diF /dt [A/µs]  
Fig. 7 Typ. Forward current versus VF  
Fig. 8 Typ. reverse recov.charge Qrr vs. di/dt  
90  
80  
70  
700  
600  
500  
400  
300  
200  
100  
0
TVJ = 125°C  
VR = 600 V  
120 A  
TVJ = 125°C  
VR = 600 V  
60 A  
30 A  
60  
IRR  
trr  
50  
120 A  
60 A  
40  
30  
20  
10  
0
[A]  
[ns]  
30 A  
600  
700  
800  
900 1000 1100 1200 1300  
600  
700  
800  
900 1000 1100 1200 1300  
diF /dt [A/µs]  
diF /dt [A/µs]  
Fig. 9 Typ. peak reverse current IRM vs. di/dt  
Fig. 10 Typ. recovery time trr versus di/dt  
4.0  
3.2  
2.4  
1.6  
0.8  
0.0  
1
TVJ = 125°C  
Diode  
IGBT  
120 A  
VR = 600 V  
60 A  
30 A  
Erec  
ZthJC  
0.1  
[mJ]  
[K/W]  
0.01  
0.001  
600  
700  
800  
900 1000 1100 1200 1300  
0.01  
0.1  
1
10  
tp [s]  
diF /dt [A/µs]  
Fig. 11 Typ. recovery energy Erec versus di/dt  
Fig. 12 Typ. transient thermal impedance  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20140708a  
© 2014 IXYS all rights reserved  
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