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2SK3113-Z-AZ

型号：

2SK3113-Z-AZ

品牌：

NEC[ NEC ]

页数：

8 页

PDF大小：

69 K

下载PDF手册
DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3113  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
DESCRIPTION  
ORDERING INFORMATION  
The 2SK3113 is N-channel DMOS FET device that  
features a low gate charge and excellent switching  
characteristic, and designed for high voltage applications  
such as switching power supply, AC adapter.  
PART NUMBER  
2SK3113  
PACKAGE  
TO-251  
2SK3113-Z  
TO-252  
FEATURES  
• Low On-state resistance  
RDS(on) = 4.4 Ω MAX. (VGS = 10 V, ID = 1.0 A)  
• Low gate charge  
QG = 9 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 A)  
• Gate voltage rating ±30 V  
• Avalanche capability ratings  
★
★
(TO-251)  
(TO-252)  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) (TC = 25°C)  
Drain Current (pulse) Note1  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
600  
±30  
V
V
±2.0  
±8.0  
20  
A
A
Total Power Dissipation (TC = 25°C)  
Total Power Dissipation (TA = 25°C) Note2  
Channel Temperature  
W
W
°C  
°C  
A
PT2  
1.0  
Tch  
150  
Storage Temperature  
Tstg  
–55 to +150  
2.0  
Single Avalanche Current Note3  
Single Avalanche Energy Note3  
IAS  
EAS  
2.7  
mJ  
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1%  
2. On glass epoxy board with 40 × 40 × 1.6 mm  
3. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.  
Date Published January 2001 NS CP(K)  
Printed in Japan  
D13336EJ2V0DS00 (2nd edition)  
The mark ★ shows major revised points.  
1998, 2001  
©
2SK3113  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
CHARACTERISTICS  
Zero Gate Voltage Drain Current  
Gate Leakage Current  
Gate Cut-off Voltage  
SYMBOL  
IDSS  
TEST CONDITIONS  
VDS = 600 V, VGS = 0 V  
MIN. TYP. MAX. UNIT  
100  
±10  
3.5  
µA  
µA  
V
IGSS  
VGS(off)  
| yfs |  
RDS(on)  
Ciss  
VGS = ±30 V, VDS = 0V  
VDS = 10 V, ID = 1 mA  
VDS = 10 V, ID = 1.0 A  
VGS = 10 V, ID = 1.0 A  
VDS = 10 V  
2.5  
0.5  
Forward Transfer Admittance  
Drain to Source On-state Resistance  
Input Capacitance  
S
3.3  
290  
60  
5
4.4  
Ω
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
V
Output Capacitance  
Coss  
Crss  
VGS = 0 V  
Reverse Transfer Capacitance  
Turn-on Delay Time  
f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
VDD = 150 V, ID = 1.0 A  
VGS(on) = 10 V  
7
Rise Time  
2
Turn-off Delay Time  
RG = 10 Ω, RL = 10 Ω  
22  
9
Fall Time  
Total Gate Charge  
QG  
VDD = 450 V  
9
Gate to Source Charge  
Gate to Drain Charge  
Body Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
QGS  
QGD  
VF(S-D)  
trr  
VGS = 10 V  
2.4  
2
ID = 2.0 A  
IF = 2.0 A, VGS = 0 V  
IF = 2.0 A, VGS = 0 V  
di/dt = 50 A/µs  
0.9  
0.9  
2.0  
µs  
µC  
Qrr  
TEST CIRCUIT 1 AVALANCHE CAPABILITY  
TEST CIRCUIT 2 SWITCHING TIME  
D.U.T.  
D.U.T.  
L
RG = 25 Ω  
VGS  
RL  
90%  
PG.  
VGS = 20 → 0 V  
VGS  
VGS(on)  
10%  
VDD  
50 Ω  
Wave Form  
0
RG  
PG.  
VDD  
90%  
ID  
90%  
10%  
tf  
BVDSS  
ID  
IAS  
VGS  
0
10%  
ID  
0
VDS  
Wave Form  
ID  
tr  
td(on)  
td(off)  
VDD  
τ
ton  
toff  
τ = 1  
µs  
Starting Tch  
Duty Cycle ≤ 1%  
TEST CIRCUIT 3 GATE CHARGE  
D.U.T.  
IG = 2 mA  
RL  
PG.  
VDD  
50 Ω  
2
Data Sheet D13336EJ2V0DS  
2SK3113  
★
TYPICAL CHARACTERISTICS (TA = 25°C)  
DERATING FACTOR OF FORWARD BIAS  
SAFE OPERATING AREA  
TOTAL POWER DISSIPATION vs.  
CASE TEMPERATURE  
100  
80  
60  
40  
20  
0
40  
35  
30  
25  
20  
15  
10  
5
0
20  
40 60  
80 100 120 140 160  
0
20 40  
60  
80 100 120 140 160  
T
ch - Channel Temperature - ˚C  
T
C
- Case Temperature - ˚C  
FORWARD BIAS SAFE OPERATING AREA  
100  
TC  
= 25˚C  
Single Pulse  
ID(pulse)  
10  
1
ID(DC)  
0.1  
1000  
1
10  
100  
VDS - Drain to Source Voltage - V  
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH  
Rth(ch-A) =125˚C/W  
100  
10  
Rth(ch-C) =6.25˚C/W  
1
0.1  
0.01  
Single Pulse  
10 µ  
100 µ  
1 m  
10 m  
100 m  
1
10  
100  
1000  
PW - Pulse Width - s  
3
Data Sheet D13336EJ2V0DS  
2SK3113  
DRAIN CURRENT vs.  
FORWARD TRANSFER CHARACTERISTICS  
DRAIN TO SOURCE VOLTAGE  
Pulsed  
5
4
3
100  
10  
1.0  
0.1  
0
V
GS = 10 V  
8 V  
6 V  
T
ch = 125˚C  
75˚C  
T
ch = 25˚C  
−25˚C  
2
1
V
DS = 10 V  
Pulsed  
0
0
5
10  
15  
0
10  
20  
30  
40  
VGS - Gate to Source Voltage - V  
V
DS - Drain to Source Voltage - V  
FORWARD TRANSFER ADMITTANCE vs.  
DRAIN CURRENT  
GATE TO SOURCE CUT-OFF VOLTAGE vs.  
CHANNEL TEMPERATURE  
5.0  
4.0  
3.0  
2.0  
1.0  
0
100  
V
DS = 10 V  
Pulsed  
10  
1
T
ch = −25˚C  
25˚C  
75˚C  
125˚C  
V
DS = 10 V  
= 1 mA  
I
D
0.1  
0.01  
0.1  
1.0  
10  
−50  
0
50  
100  
150  
T
ch - Channel Temperature - ˚C  
I
D
- Drain Current - A  
DRAIN TO SOURCE ON-STATE  
RESISTANCE vs. DRAIN CURRENT  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
GATE TO SOURCE VOLTAGE  
Pulsed  
Pulsed  
7
7
6
5
4
3
2
1
0
6
5
4
3
2
1
I
D
= 2.0 A  
1.0 A  
V
GS = 10 V  
20 V  
0
0.1  
1
10  
0
5
10  
15  
ID - Drain Current - A  
V
GS - Gate to Source Voltage - V  
4
Data Sheet D13336EJ2V0DS  
2SK3113  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
CHANNEL TEMPERATURE  
SOURCE TO DRAIN DIODE  
FORWARD VOLTAGE  
9
8
7
6
5
ID = 2 A  
100  
10  
1 A  
4
3
2
1
0
1.0  
0.1  
V
GS = 10 V  
0 V  
V
GS = 10 V  
100 150  
ch - Channel Temperature - ˚C  
Pulsed  
−50  
0
50  
0
0.5  
1.0  
1.5  
T
V
SD - Source to Drain Voltage - V  
CAPACITANCE vs. DRAIN TO  
SOURCE VOLTAGE  
SWITCHING CHARACTERISTICS  
100  
10  
1
10000  
1000  
100  
10  
t
d(off)  
t
f
C
iss  
td(on)  
t
r
C
oss  
rss  
V
V
R
DD = 150V  
GS = 10 V  
= 10 Ω  
C
V
GS = 0 V  
G
f = 1 MHz  
0.1  
1
0.1  
1
10  
0.1  
1
10  
100  
ID - Drain Current - A  
VDS - Drain to Source Voltage - V  
REVERSE RECOVERY TIME vs.  
DRAIN CURRENT  
DYNAMIC INPUT/OUTPUT CHARACTERISTICS  
10000  
1000  
100  
800  
600  
400  
200  
16  
14  
12  
10  
8
di/dt = 50 A/µs  
ID = 2.0 A  
V
GS = 0 V  
V
DD = 450 V  
300 V  
V
GS  
150 V  
6
4
2
V
DS  
0
10  
0
4
8
12  
16  
0.1  
1.0  
10  
100  
Q
G
- Gate Charge - nC  
I
D
- Drain Current - A  
5
Data Sheet D13336EJ2V0DS  
2SK3113  
SINGLE AVALANCHE ENERGY  
DERATING FACTOR  
SINGLE AVALANCHE CURRENT vs.  
INDUCTIVE LOAD  
100  
10  
120  
100  
80  
V
R
V
DD = 150 V  
= 25 Ω  
GS = 20 → 0 V  
G
I
AS ≤ 2.0 A  
I
AS = 2.0 A  
60  
1.0  
0.1  
40  
20  
0
R
G
= 25 Ω  
DD = 150 V  
GS = 20 → 0 V  
V
V
Starting Tch = 25˚C  
10 µ  
100 µ  
1 m  
10 m  
25  
50  
75  
100  
125  
150  
L - Inductive Load - H  
Starting Tch - Starting Channel Temperature - ˚C  
6
Data Sheet D13336EJ2V0DS  
2SK3113  
PACKAGE DRAWINGS (Unit: mm)  
1) TO-251 (MP-3)  
2) TO-252 (MP-3Z)  
2.3±0.2  
0.5±0.1  
6.5±0.2  
6.5±0.2  
2.3±0.2  
5.0±0.2  
4
5.0±0.2  
0.5±0.1  
4
1
2
3
1
2
3
1.1±0.2  
0.9  
0.8  
1.1±0.2  
MAX. MAX.  
2.3 2.3  
+0.2  
0.5-0.1  
+0.2  
0.5-0.1  
0.8  
1. Gate  
2.3 2.3  
2. Drain  
3. Source  
4. Fin (Drain)  
1.Gate  
2.Drain  
3.Source  
4.Fin (Drain)  
EQUIVALENT CIRCUIT  
Drain  
Body  
Diode  
Gate  
Gate  
Protection  
Diode  
Source  
Remark  
The diode connected between the gate and source of the transistor serves as a protector against ESD. When  
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated  
voltage may be applied to this device.  
7
Data Sheet D13336EJ2V0DS  
2SK3113  
•
The information in this document is current as of january, 2001. The information is subject to  
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or  
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all  
products and/or types are available in every country. Please check with an NEC sales representative  
for availability and additional information.  
•
•
No part of this document may be copied or reproduced in any form or by any means without prior  
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.  
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of  
third parties by or arising from the use of NEC semiconductor products listed in this document or any other  
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any  
patents, copyrights or other intellectual property rights of NEC or others.  
•
•
•
Descriptions of circuits, software and other related information in this document are provided for illustrative  
purposes in semiconductor product operation and application examples. The incorporation of these  
circuits, software and information in the design of customer's equipment shall be done under the full  
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third  
parties arising from the use of these circuits, software and information.  
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers  
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize  
risks of damage to property or injury (including death) to persons arising from defects in NEC  
semiconductor products, customers must incorporate sufficient safety measures in their design, such as  
redundancy, fire-containment, and anti-failure features.  
NEC semiconductor products are classified into the following three quality grades:  
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products  
developed based on a customer-designated "quality assurance program" for a specific application. The  
recommended applications of a semiconductor product depend on its quality grade, as indicated below.  
Customers must check the quality grade of each semiconductor product before using it in a particular  
application.  
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio  
and visual equipment, home electronic appliances, machine tools, personal electronic equipment  
and industrial robots  
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems and medical equipment for life support, etc.  
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's  
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not  
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness  
to support a given application.  
(Note)  
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.  
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for  
NEC (as defined above).  
M8E 00. 4  
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