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IXTX40P50P

型号：

IXTX40P50P

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

6 页

PDF大小：

124 K

下载PDF手册
PolarPTM  
Power MOSFET  
VDSS = - 500V  
ID25 = - 40A  
IXTK40P50P  
IXTX40P50P  
RDS(on)  
230m  
P-Channel Enhancement Mode  
Avalanche Rated  
TO-264 (IXTK)  
G
D
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
Tab  
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
- 500  
- 500  
V
V
VDGR  
PLUS247 (IXTX)  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
- 40  
A
A
- 120  
G
IA  
TC = 25C  
TC = 25C  
- 40  
3.5  
A
J
D
S
Tab  
EAS  
G = Gate  
S = Source  
D
= Drain  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150C  
TC = 25C  
10  
V/ns  
W
Tab = Drain  
890  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
C  
C  
C  
Features  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
International Standard Packages  
Rugged PolarPTM Process  
Avalanche Rated  
Md  
Mounting Force (PLUS247)  
Mounting Torque (TO-264)  
20..120/4.5..27  
1.13/10  
N/lb  
Nm/lb.in  
Fast Intrinsic Diode  
Low Package Inductance  
Weight  
PLUS247  
TO-264  
6
10  
g
g
Advantages  
Easy to Mount  
Space Savings  
High Power Density  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
- 500  
- 2.0  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = - 250A  
VDS = VGS, ID = -1mA  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
Applications  
- 4.5  
High-Side Switches  
Push Pull Amplifiers  
DC Choppers  
Automatic Test Equipment  
100 nA  
IDSS  
- 50 A  
TJ = 125C  
- 250 A  
Current Regulators  
RDS(on)  
VGS = -10V, ID = 0.5 • ID25, Note 1  
230 m  
DS99935D(6/15)  
© 2015 IXYS CORPORATION, All Rights Reserved  
IXTK40P50P  
IXTX40P50P  
Symbol  
Test Conditions  
Characteristic Values  
TO-264 AA Outline  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ. Max.  
gfs  
VDS = -10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = - 25V, f = 1MHz  
23  
38  
S
Ciss  
Coss  
Crss  
11.5  
1150  
93  
nF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
37  
59  
90  
34  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1(External)  
: 1 - Gate  
2 - Drain  
3 - Source  
4 - Drain  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min.  
Max.  
A
A1  
A2  
b
b1  
b2  
4.82  
2.54  
2.00  
1.12  
2.39  
2.90  
5.13  
2.89  
2.10  
1.42  
2.69  
3.09  
.190  
.100  
.079  
.044  
.094  
.114  
.202  
.114  
.083  
.056  
.106  
.122  
Qg(on)  
Qgs  
205  
55  
nC  
nC  
nC  
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
75  
c
D
E
e
0.53  
25.91 26.16  
19.81 19.96  
5.46 BSC  
0.83  
.021  
1.020  
.780  
.033  
1.030  
.786  
RthJC  
RthCS  
0.14C/W  
C/W  
0.15  
.215 BSC  
J
K
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
L
L1  
20.32 20.83  
.800  
.090  
.820  
.102  
2.29  
2.59  
Source-Drain Diode  
P
3.17  
3.66  
.125  
.144  
Q
Q1  
6.07  
8.38  
6.27  
8.69  
.239  
.330  
.247  
.342  
Symbol  
Test Conditions  
Characteristic Values  
R
R1  
3.81  
1.78  
4.32  
2.29  
.150  
.070  
.170  
.090  
(TJ = 25C, Unless Otherwise Specified)  
Min. Typ.  
Max.  
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
IS  
VGS = 0V  
- 40  
A
A
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = - 20A, VGS = 0V, Note 1  
-160  
- 3.0  
PLUS247TM Outline  
V
trr  
QRM  
IRM  
477  
14.5  
- 61  
ns  
C  
A
IF = - 20A, -di/dt = -150A/s  
VR = -100V, VGS = 0V  
Note  
1: Pulse test, t 300s, duty cycle, d 2%.  
Terminals: 1 - Gate  
2 - Drain  
3 - Source  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
5.45 BSC  
.215 BSC  
L
L1  
19.81 20.32  
.780 .800  
.150 .170  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXTK40P50P  
IXTX40P50P  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
-90  
-80  
-70  
-60  
-50  
-40  
-30  
-20  
-10  
0
-40  
-35  
-30  
-25  
-20  
-15  
-10  
-5  
VGS = -10V  
- 7V  
VGS = -10V  
- 7V  
- 6V  
- 6V  
- 5V  
- 5V  
0
0
-5  
-10  
-15  
-20  
-25  
-30  
0
0
0
-1  
-2  
-3  
-4  
-5  
-6  
-7  
-8  
-9  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = - 20A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
-40  
-35  
-30  
-25  
-20  
-15  
-10  
-5  
2.4  
VGS = -10V  
- 7V  
VGS = -10V  
2.0  
1.6  
1.2  
0.8  
0.4  
I D = - 40A  
- 6V  
I D = - 20A  
- 5V  
0
-2  
-4  
-6  
-8  
-10  
-12  
-14  
-16  
-18  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = - 20A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
-45  
-40  
-35  
-30  
-25  
-20  
-15  
-10  
-5  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VGS = -10V  
TJ = 125ºC  
TJ = 25ºC  
0
-10  
-20  
-30  
-40  
-50  
-60  
-70  
-80  
-90  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TC - Degrees Centigrade  
ID - Amperes  
© 2015 IXYS CORPORATION, All Rights Reserved  
IXTK40P50P  
IXTX40P50P  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
70  
60  
50  
40  
30  
20  
10  
0
-70  
-60  
-50  
-40  
-30  
-20  
-10  
0
TJ = - 40ºC  
25ºC  
125ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
-3.5  
-4.0  
-4.5  
-5.0  
-5.5  
-6.0  
-6.5  
0
-10  
-20  
-30  
-40  
-50  
-60  
-70  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
-140  
-120  
-100  
-80  
-60  
-40  
-20  
0
-10  
-9  
-8  
-7  
-6  
-5  
-4  
-3  
-2  
-1  
0
VDS = - 250V  
I
I
D = - 20A  
G = -1mA  
TJ = 125ºC  
TJ = 25ºC  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
220  
-0.5  
-1.0  
-1.5  
-2.0  
-2.5  
-3.0  
-3.5  
-4.0  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
1000  
-
100,000  
10,000  
1,000  
100  
f = 1 MHz  
RDS(on) Limit  
C
iss  
100  
-
25µs  
100µs  
C
oss  
-
10  
1ms  
10ms  
100ms  
- 1  
TJ = 150ºC  
C = 25ºC  
Single Pulse  
DC  
C
rss  
-30  
T
10  
-
0.1  
-
0
-5  
-10  
-15  
-20  
-25  
-35  
-40  
-
-
1000  
10  
100  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTK40P50P  
IXTX40P50P  
Fig. 13. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS REF: T_40P50P(B9) 03-06-08-A  
© 2015 IXYS CORPORATION, All Rights Reserved  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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