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IXTA80N10T7

型号：

IXTA80N10T7

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

5 页

PDF大小：

163 K

下载PDF手册
Preliminary Technical Information  
TrenchMVTM  
Power MOSFET  
VDSS = 100  
ID25 = 80  
RDS(on) ≤ 14 mΩ  
V
A
IXTA80N10T7  
N-ChannelEnhancementMode  
AvalancheRated  
Symbol  
Test Conditions  
Maximum Ratings  
TO-263 (7-lead) (IXTA..7)  
VDSS  
VDGR  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C; RGS = 1 MΩ  
100  
100  
V
V
VGSM  
Transient  
± 30  
V
1
ID25  
IDM  
TC = 25°C  
80  
220  
A
A
7
TC = 25°C, pulse width limited by TJM  
(TAB)  
Pin-out:1 - Gate  
IAR  
EAS  
TC = 25°C  
TC = 25°C  
25  
400  
A
mJ  
2, 3 - Source  
4 - NC (cut)  
5,6,7 - Source  
TAB (8) - Drain  
dv/dt  
PD  
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS  
TJ ≤ 175°C, RG = 15 Ω  
3
V/ns  
TC = 25°C  
230  
W
Features  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
ꢀUltra-low On Resistance  
ꢀUnclamped Inductive Switching (UIS)  
rated  
ꢀLow package inductance  
- easy to drive and to protect  
ꢀ175 °C Operating Temperature  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
Weight  
3
g
Advantages  
ꢀ
Easy to mount  
ꢀ
Space savings  
ꢀ
High power density  
Applications  
Automotive  
- Motor Drives  
Symbol  
Test Conditions  
Characteristic Values  
ꢀ
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 μA  
VDS = VGS, ID = 100 μA  
VGS = ± 20 V, VDS = 0 V  
100  
V
V
- 42V Power Bus  
- ABS Systems  
2.5  
4.5  
ꢀ
DC/DC Converters and Off-line UPS  
ꢀ
Primary Switch for 24V and 48V  
Systems  
± 200  
nA  
ꢀ
IDSS  
VDS = VDSS  
VGS = 0 V  
5
μA  
μA  
Distributed Power Architechtures  
TJ = 150°C  
150  
and VRMs  
ꢀ
Electronic Valve Train Systems  
RDS(on)  
VGS = 10 V, ID = 25 A, Note 1  
11.5  
14 mΩ  
ꢀ
High Current Switching  
Applications  
ꢀ
High Voltage Synchronous Recifier  
DS99706 (11/06)  
© 2006 IXYS CORPORATION All rights reserved  
IXTA80N10T7  
Symbol  
Test Conditions  
Characteristic Values  
TO-263 (7-lead) (IXTA 7) Outline  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
VDS= 10 V; ID = 40 A, Note 1  
33  
55  
S
Ciss  
Coss  
Crss  
3040  
420  
90  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
Resistive Switching Times  
VGS = 10 V, VDS = 0.5 VDSS, ID = 10 A  
RG = 15 Ω (External)  
31  
54  
40  
48  
ns  
ns  
ns  
ns  
Qg(on)  
Qgs  
60  
21  
15  
nC  
nC  
nC  
VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A  
Pins: 1 - Gate  
2, 3 - Source  
4 - Drain  
Qgd  
RthJC  
0.65°C/W  
5,6,7 - Source  
Tab (8) - Drain  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0 V  
80  
A
A
ISM  
VSD  
trr  
Pulse width limited by TJM  
IF = 25 A, VGS = 0 V, Note 1  
220  
1.1  
V
IF = 25 A, -di/dt = 100 A/μs  
100  
ns  
VR = 25 V, VGS = 0 V  
Notes: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %.  
PRELIMINARYTECHNICALINFORMATION  
The product presented herein is under development. The Technical Specifications  
offered are derived from data gathered during objective characterizations of preliminary  
engineering lots; but also may yet contain some information supplied during a pre-  
production design evaluation. IXYS reserves the right to change limits, test conditions,  
and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
oneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
6771478B2  
7,005,734B2  
7,063,975B2  
7,071,537  
IXTA80N10T7  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
250  
225  
200  
175  
150  
125  
100  
75  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
= 10V  
GS  
V
= 10V  
GS  
9V  
8V  
9V  
8V  
7V  
7V  
50  
6V  
25  
6V  
10  
0
0
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
0
2
4
6
8
12  
14  
16  
18  
20  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 40A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 150ºC  
80  
70  
60  
50  
40  
30  
20  
10  
0
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 10V  
GS  
V
= 10V  
GS  
9V  
8V  
7V  
I
= 80A  
D
I
= 40A  
D
6V  
5V  
0.2 0.4 0.6 0.8  
1
1.2 1.4 1.6 1.8  
2
2.2 2.4  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 40A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
4.6  
4.2  
3.8  
3.4  
3
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
= 10V  
GS  
T
= 175ºC  
J
15V - - - -  
2.6  
2.2  
1.8  
1.4  
1
T
J
= 25ºC  
0.6  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
25  
50  
75  
100 125 150 175 200 225 250  
ID - Amperes  
TC - Degrees Centigrade  
© 2006 IXYS CORPORATION All rights reserved  
IXTA80N10T7  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
80  
70  
60  
50  
40  
30  
20  
10  
0
140  
120  
100  
80  
T
J
= - 40ºC  
25ºC  
150ºC  
60  
T
J
= 150ºC  
40  
25ºC  
- 40ºC  
20  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
4
4.5  
5
5.5  
6
6.5  
7
7.5  
8
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
250  
225  
200  
175  
150  
125  
100  
75  
9
8
7
6
5
4
3
2
1
0
V
= 50V  
DS  
I
I
= 25A  
D
G
= 10mA  
T
J
= 150ºC  
T
J
= 25ºC  
50  
25  
0
0.4 0.5 0.6 0.7 0.8 0.9  
1
1.1 1.2 1.3 1.4 1.5  
0
10  
20  
30  
40  
50  
60  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
10,000  
1,000  
100  
1.00  
0.10  
0.01  
f = 1 MHz  
C
iss  
C
C
oss  
rss  
10  
0
5
10  
15  
20  
25  
30  
35  
40  
0.0001  
0.001  
0.01  
0.1  
1
10  
VDS - Volts  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTA80N10T7  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
70  
65  
60  
55  
50  
45  
40  
35  
70  
65  
60  
55  
50  
45  
40  
35  
R
V
V
= 15  
Ω
G
R
V
V
= 15  
Ω
G
= 10V  
= 50V  
GS  
DS  
= 10V  
= 50V  
GS  
DS  
T
= 25ºC  
J
I
= 30A  
D
T
J
= 125ºC  
I
= 10A  
D
25  
15  
10  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
10  
12  
14  
16  
18  
20  
22  
24  
26  
28  
30  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
260  
240  
220  
200  
180  
160  
140  
120  
100  
80  
95  
90  
85  
80  
75  
70  
65  
60  
55  
50  
45  
40  
35  
30  
49  
76  
72  
68  
64  
60  
56  
52  
48  
44  
40  
36  
t r  
td(on)  
- - - -  
48  
47  
46  
45  
44  
43  
42  
41  
40  
39  
TJ = 125ºC, V  
= 10V  
GS  
t f  
R
td(off)  
- - - -  
I
= 30A  
V
= 50V  
D
DS  
=15 , V  
= 10V  
GS  
Ω
G
I
= 10A  
D
V
= 50V  
DS  
I
= 10A  
D
I
= 30A  
D
60  
40  
20  
0
20  
25  
30  
35  
40  
45  
50  
55  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
160  
150  
140  
130  
120  
110  
100  
90  
270  
250  
230  
210  
190  
170  
150  
130  
110  
90  
50  
49  
48  
47  
46  
45  
44  
43  
42  
41  
40  
39  
38  
78  
74  
70  
66  
62  
58  
54  
50  
46  
42  
38  
34  
30  
t f  
td(off)  
- - - -  
t f  
R
V
td(off)  
- - - -  
T
= 125ºC, VGS = 10V  
J
= 15 , VGS = 10V  
Ω
G
V
DS = 50V  
DS = 50V  
I
= 10A  
D
TJ = 125ºC  
80  
70  
60  
70  
T
= 25ºC  
26  
J
I
= 30A  
30  
D
50  
50  
40  
30  
12  
14  
16  
18  
20  
22  
24  
28  
30  
15  
20  
25  
35  
40  
45  
50  
55  
RG - Ohms  
ID - Amperes  
IXYS REF: T_80N10T (3V) 6-21-06.xls  
© 2006 IXYS CORPORATION All rights reserved  
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