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IXSP20N60B2

型号：

IXSP20N60B2

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

576 K

下载PDF手册
IXSP 20N60B2  
IXSP 20N60B2D1  
VCES = 600 V  
IC25 = 35 A  
VCE(sat) = 2.5 V  
High Speed IGBT  
Short Circuit SOA Capability  
PreliminaryDataSheet  
D1  
Symbol  
TestConditions  
MaximumRatings  
TO-220AB (IXSP)  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C; RGE = 1 MΩ  
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
C (TAB)  
G
C
E
IC25  
TC = 25°C  
35  
20  
11  
60  
A
A
A
A
G = Gate  
E = Emitter  
C = Collector  
TAB = Collector  
IC110  
IF(110)  
ICM  
TC = 110°C  
TC = 25°C, 1 ms  
SSOA  
(RBSOA)  
V
= 15 V, TJ = 125°C, RG = 82Ω  
ICM = 32  
A
µs  
W
CGlaE mped inductive load  
@ 0.8 VCES  
Features  
tSC  
(SCSOA)  
V
= 15 V, V = 360 V, T = 125°C  
10  
RGGE = 82 Ω, nCoEn repetitiveJ  
TC = 25°C  
• International standard package  
• Guaranteed Short Circuit SOA  
capability  
PC  
190  
• Low VCE(sat)  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
- for low on-state conduction losses  
• Highcurrenthandlingcapability  
• MOS Gate turn-on  
TJM  
Tstg  
-55 ... +150  
- drivesimplicity  
• Fast fall time for switching speeds  
up to 20 kHz  
Weight  
2
g
Maximumleadtemperatureforsoldering  
1.6 mm (0.062 in.) from case for 10 s  
Maximum tab temperature for soldering for 10s  
300  
°C  
260  
°C  
Applications  
• AC motor speed control  
• Uninterruptiblepowersupplies(UPS)  
• Welding  
Symbol  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
BVCES  
VGE(th)  
IC = 250 µA, VGE = 0 V  
IC = 750 µA, VCE = VGE  
600  
3.5  
V
Advantages  
6.5  
V
• High power density  
ICES  
VCE = VCES  
VGE = 0 V  
SP20N60B2  
SP20N60B2D1  
25  
85  
µA  
µA  
IGES  
VCE = 0 V, VGE  
=
20 V  
100  
2.5  
nA  
V
VCE(sat)  
IC = 16A, VGE = 15 V  
DS99181A(07/04)  
© 2004 IXYS All rights reserved  
IXSP 20N60B2  
IXSP 20N60B2D1  
Symbol  
gfs  
TestConditions  
Characteristic Values  
TO-220 AB (IXSP) Outline  
(TJ = 25°C, unless otherwise specified)  
min.  
typ.  
max.  
IC = 16A; VCE = 10 V, Note 1  
3.5  
7.0  
S
Cies  
800  
pF  
Coes  
V
= 25 V, VGE = 0 V  
76  
90  
pF  
pF  
fC=E 1 MHz  
20N60B2D1  
Cres  
28  
pF  
Qg  
33  
12  
12  
nC  
nC  
nC  
Qge  
Qgc  
IC = 16A, VGE = 15 V, VCE = 0.5 VCES  
Inductive load, TJ = 25°C  
td(on)  
tri  
td(off)  
tfi  
30  
30  
ns  
ns  
ns  
ns  
Dim.  
Millimeter  
Min. Max.  
12.70 13.97 0.500 0.550  
14.73 16.00 0.580 0.630  
Inches  
Min. Max.  
IC = 16A, VGE = 15 V  
A
B
C
D
E
F
V
= 0.8 V , RG = 10 Ω  
SCwEitching tiCmESes may increase for VCE  
(Clamp) > 0.8 • VCES, higher TJ or  
increased RG  
116  
126  
380  
9.91 10.66 0.390 0.420  
3.54  
4.08 0.139 0.161  
5.85  
2.54  
6.85 0.230 0.270  
3.18 0.100 0.125  
Eoff  
600 µJ  
G
H
J
K
M
N
Q
R
1.15  
2.79  
0.64  
2.54  
4.32  
1.14  
0.35  
2.29  
1.65 0.045 0.065  
5.84 0.110 0.230  
td(on)  
tri  
30  
30  
ns  
ns  
Inductive load, TJ = 125°C  
1.01 0.025 0.040  
BSC 0.100  
BSC  
IC = 16 A, VGE = 15 V  
Eon  
20N60B2 0.12  
20N60B2D1 0.42  
mJ  
mJ  
4.82 0.170 0.190  
1.39 0.045 0.055  
0.56 0.014 0.022  
2.79 0.090 0.110  
V
CE = 0.8 VCES, RG = 10 Ω  
Switching times may increase for  
VCE (Clamp) > 0.8 • VCES, higher TJ  
or increased RG  
td(off)  
tfi  
180  
210  
970  
ns  
ns  
µJ  
Eoff  
RthJC  
RthCS  
0.66 K/W  
K/W  
0.3  
Reverse Diode (FRED)  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
VF  
TestConditions  
IF = 10A, VGE = 0 V  
TJ =150°C  
1.66  
2.66  
V
V
A
IRM  
trr  
IF = 12A, V = 0 V, -diF/dt = 100 A/µs  
T = 100°C 1.5  
TJJ = 100°C 90  
VR = 100 VGE  
ns  
trr  
IF = 1 A; -di/dt = 100 A/µs; VR = 30 V  
30  
ns  
RthJC  
2.5 K/W  
Note 1: Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
oneormoreofthefollowingU.S.patents:  
4,835,592 4,881,106  
4,850,072 4,931,844  
5,017,508 5,049,961  
5,034,796 5,063,307  
5,187,117  
5,237,481  
5,381,025 6,162,665  
6,306,728 B1 6,534,343  
6,683,344  
6,710,405B2  
5,486,715  
6,259,123B1 6,404,065B1 6,583,505  
IXSP 20N60B2  
IXSP 20N60B2D1  
Fig. 1. Output Characteristics  
@ 25  
Fig. 2. Extended Output Characteristics  
º
C
@ 25 C  
º
32  
28  
24  
20  
16  
12  
8
70  
60  
50  
40  
30  
20  
10  
0
V
= 17V  
15V  
V
= 17V  
GE  
GE  
15V  
13V  
13V  
11V  
11V  
9V  
9V  
7V  
4
0
0.5  
0.5  
9
1
1.5  
2
2.5  
3
3.5  
4
0
-50  
6
2
4
6
8
10 12 14 16 18 20  
VC E - Volts  
VC E - Volts  
Fig. 3. Output Characteristics  
@ 125  
Fig. 4. Dependence of VCE(sat) on  
Temperature  
ºC  
32  
28  
24  
20  
16  
12  
8
1.8  
1.7  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
V
= 17V  
15V  
GE  
V
= 15V  
GE  
I
I
= 32A  
= 16A  
C
C
13V  
11V  
9V  
7V  
4
I
= 8A  
C
0
-25  
0
25  
50  
75  
100 125 150  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter voltage  
Fig. 6. Input Admittance  
8
7
6
5
4
3
2
1
60  
50  
40  
30  
20  
10  
0
= 25ºC  
T
J
I
= 32A  
16A  
8A  
C
T = 125ºC  
J
25ºC  
-40ºC  
7
8
9
10 11 12 13 14 15 16  
VG E - Volts  
10 11 12 13 14 15 16 17 18 19 20  
VG E - Volts  
IXSP 20N60B2  
IXSP 20N60B2D1  
Fig. 8. Dependence of Turn-off  
Energy Loss on RG  
Fig. 7. Transconductance  
9
8
7
6
5
4
3
2
1
0
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
I
I
= 32A  
C
C
T = 125ºC  
J
T = -40ºC  
J
V
V
= 15V  
GE  
CE  
25ºC  
125ºC  
= 400V  
= 16A  
= 8A  
I
C
0
10  
20  
30  
40  
50  
60  
10  
20  
30  
40  
50  
60  
70  
80  
90 100  
I C - Amperes  
R G - Ohms  
Fig. 9. Dependence of Turn-Off  
Energy Loss on IC  
Fig. 10. Dependence of Turn-off  
Energy Loss on Temperature  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
R
V
= 10Ω  
R
V
= 10Ω  
G
G
= 15V  
= 15V  
GE  
CE  
GE  
CE  
I = 32A  
C
V
= 400V  
V
= 400V  
T = 125ºC  
J
I
= 16A  
= 8A  
C
I
T = 25ºC  
J
C
25 35 45 55 65 75 85 95 105 115 125  
8
12  
16  
20  
24  
28  
32  
I C - Amperes  
TJ - Degrees Centigrade  
Fig. 11. Dependence of Turn-off  
Switching Time on RG  
Fig. 12. Dependence of Turn-off  
Switching Time on IC  
450  
400  
350  
300  
250  
200  
150  
100  
260  
240  
220  
200  
180  
160  
140  
120  
100  
80  
td(off)  
td(off)  
tfi  
- - - - -  
T = 125ºC  
tfi  
R
V
- - - - -  
= 10Ω  
= 15V  
J
V
V
= 15V  
G
T = 125ºC  
J
GE  
CE  
= 400V  
GE  
CE  
V
= 400V  
I
= 32A  
C
I
= 16A  
80  
C
T = 25ºC  
J
I
= 8A  
20  
C
60  
10  
30  
40  
50  
60  
70  
90 100  
8
12  
16  
20  
24  
28  
32  
R G - Ohms  
I C - Amperes  
IXSP 20N60B2  
IXSP 20N60B2D1  
Fig. 13. Dependence of Turn-off  
Switching Time on Temperature  
Fig. 14. Gate Charge  
300  
280  
260  
240  
220  
200  
180  
160  
140  
120  
100  
80  
16  
14  
12  
10  
8
td(off)  
tfi - - - - -  
V
I
= 480V  
CE  
= 16A  
C
G
R
= 10Ω  
G
I
= 32A  
C
I
= 10mA  
V
V
= 15V  
GE  
CE  
= 400V  
I
= 16A  
C
6
I
= 8A  
C
4
I
= 32A  
C
2
0
25 35 45 55 65 75 85 95 105 115 125  
0
5
10  
15  
20  
25  
30  
35  
TJ - Degrees Centigrade  
Q G - nanoCoulombs  
Fig. 16. Reverse-Bias Safe  
Operating Area  
Fig. 15. Capacitance  
1,000  
100  
10  
33  
30  
27  
24  
21  
18  
15  
12  
9
f = 1 MHz  
C
ies  
C
oes  
res  
T = 125ºC  
J
R
= 10Ω  
G
6
dV/dT < 10V/ns  
C
3
0
0
5
10  
15  
20  
25  
30  
35  
40  
100  
200  
300  
VC E - Volts  
400  
500  
600  
VC E - Volts  
Fig. 17. Maximum Transient Thermal Resistance  
1.00  
0.50  
0.10  
1
10  
100  
1,000  
Pulse Width - milliseconds  
IXSP 20N60B2  
IXSP 20N60B2D1  
30  
A
25  
250  
nC  
10  
A
TVJ = 100°C  
R = 300 V  
IF = 5 A  
IF = 10 A  
IF = 20 A  
V
200  
8
6
4
2
0
IRM  
TVJ = 150°C  
TVJ = 100°C  
IF  
Qr  
20  
15  
10  
5
IF = 5 A  
IF = 10 A  
IF = 20 A  
150  
100  
50  
TVJ = 100°C  
V
R = 300 V  
TVJ = 25°C  
0
0
A/µs  
0
1
2
3
V
100  
1000  
0
200 400 600 800 1000  
-diF/dt  
A/µs  
-diF/dt  
VF  
Fig. 18. Forward current IF versus VF  
2.0  
Fig. 19. Reverse recovery charge Qr  
Fig. 20. Peak reverse current IRM  
60  
0.3  
ns  
TVJ = 100°C  
IF = 10 A  
TVJ = 100°C  
V
100  
µs  
V
R = 300 V  
tfr  
VFR  
trr  
1.5  
Kf  
40  
20  
0
0.2  
IF = 5 A  
IF = 10 A  
IF = 20 A  
80  
1.0  
IRM  
60  
0.1  
tfr  
VFR  
0.5  
Qr  
40  
0.0  
0.0  
A/µs  
0
40  
80  
120  
160  
0
200 400 600 800 1000  
0
200 400 600 800 1000  
C
A/µs  
diF/dt  
TVJ  
-diF/dt  
Fig. 21. Dynamic parameters Qr, IRM  
Fig. 22. Recovery time trr versus -diF/dt  
Fig. 23. Peak forward voltage VFR and  
10  
Constants for ZthJC calculation:  
K/W  
1
i
Rthi (K/W)  
ti (s)  
1
2
1.449  
0.5578  
0.0052  
0.0003  
ZthJC  
0.1  
0.01  
DSEP 8-06B  
0.001  
s
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
t
Fig. 24. Transient thermal resistance junction-to-case  
NOTE:Fig. 18toFig. 23showstypicalvalues  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
oneormoreofthefollowingU.S.patents:  
4,835,592 4,881,106  
4,850,072 4,931,844  
5,017,508 5,049,961  
5,034,796 5,063,307  
5,187,117  
5,237,481  
5,381,025 6,162,665  
5,486,715  
6,306,728 B1 6,534,343  
6,683,344  
6,710,405B2  
6,259,123B1 6,404,065B1 6,583,505  
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