IXTL2x200N085T
Symbol
Test Conditions
Characteristic Values
ISOPLUS i5-PakTM (IXTL) Outline
(TJ = 25°C unless otherwise specified)
Min. Typ.
Max.
gfs
RG
VDS= 10 V; ID = 60 A, Note 1
75
125
3
S
Ω
Ciss
Coss
Crss
7600
1040
200
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
32
80
65
64
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 25 A
RG = 5 Ω (External)
Qg(on)
Qgs
152
37
nC
nC
nC
VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A
Leads:
1, 5: Drain
2, 4: Source
3: Gate
Qgd
42
RthJC
RthCS
1.0 °C/W
°C/W
6. Isolated
0.50
Source-Drain Diode
Characteristic Values
TJ = 25°C unless otherwise specified)
Symbol
IS
Test Conditions
Min. Typ.
Max.
VGS = 0 V
200
A
A
ISM
VSD
trr
Pulse width limited by TJM
IF = 50 A, VGS = 0 V, Note 1
540
1.0
V
IF = 25 A, -di/dt = 100 A/μs
55
ns
VR = 40 V, VGS = 0 V
Notes: 1. Pulse test: t ≤ 300 μs, duty cycle d ≤ 2 %;
2. Drain and Source Kelvin contacts must be located less than 5 mm
from the plastic body.
ADVANCETECHNICALINFORMATION
The product presented herein is under development. The Technical Specifications offered
are derived from a subjective evaluation of the design, based upon prior knowledge and
experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves
the right to change limits, test conditions, and dimensions without notice.
Note:
1. TAB 6 - Electrically isolated from the
other pins.
2. All leads and tab are tin plated.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405B2 6,759,692
6,710,463
7,005,734 B2
7,063,975 B2
6771478 B2 7,071,537
