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IXTA110N055T7

型号：

IXTA110N055T7

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

6 页

PDF大小：

240 K

下载PDF手册
Preliminary Technical Information  
TrenchMVTM  
Power MOSFET  
VDSS = 55  
ID25 = 110  
RDS(on) ≤ 7.0 mΩ  
V
A
IXTA110N055T7  
N-Channel Enhancement Mode  
Avalanche Rated  
Symbol  
Test Conditions  
Maximum Ratings  
TO-263 (7-lead) (IXTA..7)  
VDSS  
VDGR  
TJ = 25° C to 175° C  
TJ = 25° C to 175° C; RGS = 1 MΩ  
55  
55  
V
V
VGSM  
Transient  
20  
V
1
ID25  
IDM  
TC =25°C  
110  
300  
A
A
7
TC = 25° C, pulse width limited by TJM  
(TAB)  
Pin-out:1 - Gate  
IAR  
EAS  
TC =25°C  
TC =25°C  
25  
750  
A
mJ  
2, 3 - Source  
4 - NC (cut)  
5,6,7 - Source  
TAB (8) - Drain  
dv/dt  
PD  
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS  
TJ ≤175° C, RG = 5 Ω  
3
V/ns  
TC =25°C  
230  
W
Features  
ꢀUltra-low On Resistance  
ꢀUnclamped Inductive Switching (UIS)  
rated  
ꢀLow package inductance  
- easy to drive and to protect  
ꢀ175 ° C Operating Temperature  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
Weight  
3
g
Advantages  
ꢀ
Easy to mount  
Space savings  
ꢀ
ꢀ
High power density  
Applications  
ꢀ
Automotive  
Symbol  
Test Conditions  
Characteristic Values  
- Motor Drives  
- High Side Switch  
- 12VBattery  
(TJ = 25° C unless otherwise specified)  
Min. Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 100 µA  
55  
V
V
- ABS Systems  
2.0  
4.0  
ꢀ
DC/DC Converters and Off-line UPS  
Primary- Side Switch  
High Current Switching  
ꢀ
VGS  
=
20 V, VDS = 0 V  
200  
nA  
ꢀ
IDSS  
VDS = VDSS  
VGS = 0 V  
2
250  
µA  
µA  
Applications  
TJ = 150° C  
RDS(on)  
VGS = 10 V, ID = 25 A, Note 1  
5.5  
7.0 mΩ  
DS99680 (11/06)  
© 2006 IXYS CORPORATION All rights reserved  
IXTA110N055T7  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
TO-263 (7-lead) (IXTA...7) Outline  
(TJ = 25° C unless otherwise specified)  
gfs  
VDS= 10 V; ID = 0.5 ID25, Note 1  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
38  
65  
S
Ciss  
Coss  
Crss  
3080  
560  
pF  
pF  
pF  
140  
td(on)  
tr  
td(off)  
tf  
Resistive Switching Times  
VGS = 10 V, VDS = 0.5 VDSS, ID = 25 A  
RG = 5 Ω(External)  
20  
30  
40  
24  
ns  
ns  
ns  
ns  
Qg(on)  
Qgs  
67  
17.5  
15  
nC  
nC  
nC  
VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A  
Pins: 1 - Gate  
2, 3 - Source  
4 - Drain  
Qgd  
RthJC  
0.65°C/W  
5,6,7 - Source  
Tab (8) - Drain  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
TJ = 25° C unless otherwise specified)  
Min. Typ.  
Max.  
IS  
VGS = 0 V  
110  
A
A
ISM  
VSD  
trr  
Pulse width limited by TJM  
IF = 25 A A, VGS = 0 V, Note 1  
300  
1.0  
V
IF = 25 A, -di/dt = 100 A/µs  
70  
ns  
VR = 25 V, VGS = 0 V  
Notes: 1. Pulse test, t ≤300 µs, duty cycle d ≤ 2 %.  
PRELIMINARYTECHNICALINFORMATION  
The product presented herein is under development. The Technical Specifications  
offered are derived from data gathered during objective characterizations of preliminary  
engineering lots; but also may yet contain some information supplied during a pre-  
production design evaluation. IXYS reserves the right to change limits, test conditions,  
and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
oneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
6771478B2  
7,005,734B2  
7,063,975B2  
7,071,537  
IXTA110N055T7  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
350  
300  
250  
200  
150  
100  
50  
V
= 10V  
GS  
V
= 10V  
GS  
9V  
8V  
7V  
9V  
8V  
7V  
6V  
6V  
5V  
5V  
0
0
2
4
6
8
10  
12  
14  
16  
18  
20  
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 55A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 150ºC  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
= 10V  
GS  
V
= 10V  
GS  
9V  
8V  
7V  
I
= 110A  
D
6V  
5V  
I
= 55A  
D
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 55A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
3
120  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
= 10V  
15V  
GS  
2.8  
2.6  
2.4  
2.2  
2
T = 175ºC  
J
- - - -  
External Lead Current Limit for TO-263 & TO-220  
1.8  
1.6  
1.4  
1.2  
1
T = 25ºC  
J
0.8  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0
40  
80  
120  
160  
200  
240  
280  
320  
ID - Amperes  
TC - Degrees Centigrade  
© 2006 IXYS CORPORATION All rights reserved  
IXTA110N055T7  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
180  
160  
140  
120  
100  
80  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
T
J
= - 40ºC  
T
J
= -40ºC  
25ºC  
150ºC  
25ºC  
150ºC  
60  
40  
20  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
3
3.5  
4
4.5  
5
5.5  
6
6.5  
7
1.8  
40  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
300  
270  
240  
210  
180  
150  
120  
90  
10  
9
8
7
6
5
4
3
2
1
0
V
= 27.5V  
DS  
I
I
= 25A  
D
G
= 10mA  
T
J
= 150ºC  
60  
T
= 25ºC  
J
30  
0
0
10  
20  
30  
40  
50  
60  
70  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
QG - NanoCoulombs  
VSD - Volts  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
10,000  
1,000  
100  
1.00  
0.10  
0.01  
f = 1 MHz  
C
iss  
C
C
oss  
rss  
0
5
10  
15  
20  
25  
30  
35  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
VDS - Volts  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTA110N055T7  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
R
= 5  
Ω
G
V
V
= 10V  
GS  
DS  
T = 25ºC  
J
= 27.5V  
R
V
V
= 5  
Ω
G
= 10V  
GS  
DS  
= 27.5V  
I
= 40A  
D
T = 125ºC  
J
I
= 20A  
45  
D
20  
22  
24  
26  
28  
30  
32  
34  
36  
38  
40  
25  
35  
55  
65  
75  
85  
95  
105 115 125  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
100  
38.0  
35.5  
33.0  
30.5  
28.0  
25.5  
23.0  
20.5  
18.0  
26.0  
25.5  
25.0  
24.5  
24.0  
23.5  
23.0  
50.0  
47.5  
45.0  
42.5  
40.0  
37.5  
35.0  
t r  
td(on)  
- - - -  
t f  
R
td(off)  
- - - -  
90  
80  
70  
60  
50  
40  
30  
20  
TJ = 125ºC, V = 10V  
GS  
= 5 , V = 10V  
Ω
G
GS  
I
= 20A  
D
V
= 27.5V  
DS  
V
= 27.5V  
DS  
I
= 40A  
D
I
= 40A  
D
I
= 20A  
D
5
7
9
11 13 15 17 19 21 23 25 27 29 31 33  
RG - Ohms  
25 35 45 55 65 75 85 95 105 115 125  
TJ - Degrees Centigrade  
Fig. 18. Resistive Turn-off  
Fig. 17. Resistive Turn-off  
Switching Times vs. Gate Resistance  
Switching Times vs. Drain Current  
120  
110  
100  
90  
180  
150  
120  
90  
27  
26  
25  
24  
23  
55.0  
52.5  
50.0  
47.5  
45.0  
42.5  
40.0  
37.5  
35.0  
tf  
td(off)  
- - - -  
t f  
R
td(off)  
- - - -  
= 5 , VGS = 10V  
T = 125ºC, VGS = 10V  
J
Ω
G
VDS = 27.5V  
VDS = 27.5V  
80  
TJ = 125ºC  
I
= 20A  
D
70  
I
= 40A  
D
60  
50  
T = 25ºC  
J
40  
60  
30  
20  
30  
5
7
9
11 13 15 17 19 21 23 25 27 29 31 33  
RG - Ohms  
20 22  
24 26 28  
30 32 34 36 38 40  
ID - Amperes  
IXYS REF: T_110N055T (3V) 7-11-06.xls  
© 2006 IXYS CORPORATION All rights reserved  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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