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IXTP4N70X2M

型号：

IXTP4N70X2M

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

141 K

下载PDF手册
Advance Technical Information  
X2-Class  
Power MOSFET  
VDSS = 700V  
ID25 = 4A  
IXTP4N70X2M  
RDS(on) 850m  
(Electrically Isolated Tab)  
OVERMOLDED  
TO-220  
N-Channel Enhancement Mode  
G
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
Isolated Tab  
D = Drain  
D
S
TJ = 25C to 150C  
700  
700  
V
V
VDGR  
TJ = 25C to 150C, RGS = 1M  
G = Gate  
S = Source  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
ID25  
IDM  
TC = 25C, Limited by TJM  
TC = 25C, Pulse Width Limited by TJM  
4
8
A
A
IA  
TC = 25C  
TC = 25C  
2
A
Features  
EAS  
150  
mJ  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
50  
30  
V/ns  
W
International Standard Package  
Plastic Overmolded Tab  
Low RDS(ON) and QG  
Avalanche Rated  
Low Package Inductance  
TJ  
-55 ... +150  
150  
C  
C  
C  
TJM  
Tstg  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Advantages  
Md  
Mounting Torque  
1.13 / 10  
2.5  
Nm/lb.in  
g
High Power Density  
Easy to Mount  
Space Savings  
Weight  
Applications  
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
700  
V
V
Robotics and Servo Controls  
2.5  
4.5  
100 nA  
A  
IDSS  
5
TJ = 125C  
50 A  
RDS(on)  
VGS = 10V, ID = 2A, Note 1  
850 m  
DS100817A(3/17)  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXTP4N70X2M  
Symbol  
Test Conditions  
Characteristic Values  
OVERMOLDED TO-220  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
(IXTP...M)  
oP  
gfs  
VDS = 10V, ID = 2A, Note 1  
Gate Input Resistance  
2.6  
4.0  
S
RGi  
13  
Ciss  
Coss  
Crss  
386  
280  
1
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
2
1
3
Effective Output Capacitance  
Co(er)  
Co(tr)  
29  
80  
pF  
pF  
Energy related  
Time related  
VGS = 0V  
VDS = 0.8 • VDSS  
td(on)  
tr  
td(off)  
tf  
20  
27  
66  
28  
ns  
ns  
ns  
ns  
Resistive Switching Times  
GS = 10V, VDS = 0.5 • VDSS, ID = 2A  
V
Terminals: 1 - Gate  
2 - Drain  
RG = 50(External)  
3 - Source  
Qg(on)  
Qgs  
11.8  
3.8  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 2A  
Qgd  
3.5  
RthJC  
RthCS  
4.16 C/W  
C/W  
0.50  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
IS  
VGS = 0V  
4
A
A
ISM  
VSD  
Repetitive, pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
16  
1.4  
V
trr  
QRM  
IRM  
186  
1.3  
14.0  
ns  
IF = 2A, -di/dt = 100A/μs  
 μC  
VR = 100V  
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXTP4N70X2M  
Fig. 1. Output Characteristics @ TJ = 25oC  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
12  
10  
8
V
= 10V  
8V  
V
= 10V  
GS  
GS  
8V  
7V  
7V  
6V  
6
4
6V  
5V  
2
5V  
0
0
0
0
0.5  
1
1.5  
2
2.5  
3
0
2
4
6
8
10  
12  
14  
16  
18  
20  
22  
24  
150  
160  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 2A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125oC  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
V
= 10V  
7V  
GS  
V
= 10V  
GS  
6V  
I
= 4A  
D
I
= 2A  
D
5V  
4V  
-50  
-25  
0
25  
50  
75  
100  
125  
1
2
3
4
5
6
7
8
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 2A Value vs.  
Drain Current  
Fig. 6. Normalized Breakdown & Threshold Voltages  
vs. Junction Temperature  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
V
= 10V  
GS  
T
= 125oC  
J
BV  
DSS  
T
J
= 25oC  
V
GS(th)  
100  
-60  
-40  
-20  
0
20  
40  
60  
80  
120  
140  
1
2
3
4
5
6
7
8
9
10  
11  
12  
TJ - Degrees Centigrade  
ID - Amperes  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXTP4N70X2M  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
9
8
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
T
J
= - 40oC  
25oC  
T
J
= 125oC  
25oC  
- 40oC  
125oC  
0
1
2
3
4
5
6
7
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
ID - Amperes  
VGS - Volts  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
40  
10  
8
V
= 350V  
DS  
35  
30  
25  
20  
15  
10  
5
I
I
= 2A  
D
G
= 10mA  
6
4
T
J
= 125oC  
T
J
= 25oC  
2
0
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
0
2
4
6
8
10  
12  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Output Capacitance Stored Energy  
10000  
1000  
100  
10  
7
6
5
4
3
2
1
0
C
iss  
C
oss  
1
C
= 1 MHz  
f
rss  
0.1  
1
10  
100  
1000  
0
100  
200  
300  
400  
500  
600  
700  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTP4N70X2M  
Fig. 14. Maximum Transient Thermal Impedance  
Fig. 13. Forward-Bias Safe Operating Area  
10  
10  
1
1
R
DS(  
on  
Limit  
)
100μs  
1ms  
0.1  
0.01  
0.1  
T = 150oC  
J
10ms  
100ms  
T
C
= 25oC  
DC  
Single Pulse  
0.01  
10  
100  
1,000  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
VDS - Volts  
Pulse Width - Seconds  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_4N70X2(X1-S602) 1-19-17  
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