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IXTP160N04T2

型号：

IXTP160N04T2

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

7 页

PDF大小：

312 K

下载PDF手册
TrenchT2TM  
Power MOSFET  
VDSS = 40V  
ID25 = 160A  
RDS(on) 5m  
IXTA160N04T2  
IXTP160N04T2  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263 (IXTA)  
G
S
D (Tab)  
TO-220 (IXTP)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 175C  
40  
40  
V
V
VDGR  
TJ = 25C to 175C, RGS = 1M  
VGSM  
Transient  
20  
V
G
D
ID25  
IL(RMS)  
IDM  
TC = 25C  
External Lead Current Limit  
TC = 25C, Pulse Width Limited by TJM  
160  
120  
400  
A
A
A
S
D (Tab)  
G = Gate  
D
= Drain  
S = Source Tab = Drain  
IA  
TC = 25C  
TC = 25C  
80  
A
EAS  
600  
mJ  
PD  
TC = 25C  
250  
W
Features  
TJ  
-55 ... +175  
175  
C  
C  
C  
TJM  
Tstg  
International Standard Packages  
Avalanche Rated  
Low Package Inductance  
Fast Intrinsic Rectifier  
-55 ... +175  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
175°C Operating Temperature  
High Current Handling Capability  
ROHS Compliant  
High Performance Trench  
FC  
Md  
Mounting Force (TO-263)  
Mounting Torque (TO-220)  
10..65 / 2.2..14.6  
1.13 / 10  
N/lb  
Nm/lb.in  
Weight  
TO-263  
TO-220  
2.5  
3.0  
g
g
Technology for extremely low RDS(on)  
Advantages  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min. Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250A  
VDS = VGS, ID = 250A  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
40  
V
V
Applications  
2.0  
4.0  
Automotive Engine Control  
Synchronous Buck Converter  
           100 nA  
A  
IDSS  
5
(for Notebook SystemPower &  
TJ = 150C  
VGS = 10V, ID = 50A, Notes 1 & 2  
150 A  
5 m  
General Purpose Point & Load)  
DC/DC Converters  
High Current Switching Applications  
RDS(on)  
Power Train Management  
Distributed Power Architecture  
  
DS100052A(7/18)  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXTA160N04T2  
IXTP160N04T2  
Symbol  
Test Conditions  
Characteristic Values  
TO-263 Outline  
A
(TJ = 25C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
E
E1  
C2  
L1  
L2  
gfs  
VDS = 10V, ID = 60A, Note 1  
38  
62  
S
D1  
D
4
H
A1  
Ciss  
Coss  
Crss  
4640  
820  
pF  
pF  
pF  
1
3
2
VGS = 0V, VDS = 25V, f = 1MHz  
b
b2  
L3  
c
e
e
0.43 [11.0]  
145  
0  
0.34 [8.7]  
td(on)  
tr  
td(off)  
tf  
10  
27  
19  
16  
ns  
ns  
ns  
ns  
Resistive Switching Times  
0.66 [16.6]  
A2  
V
GS = 10V, VDS = 20V, ID = 80A  
1 - Gate  
2,4 - Drain  
3 - Source  
0.20 [5.0]  
0.10 [2.5]  
60.12 [3.0]  
0.06 [1.6]  
RG = 5(External)  
Qg(on)  
Qgs  
79  
19  
20  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS  
Qgd  
RthJC  
RthCS  
0.60 C/W  
C/W  
TO-220  
0.50  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
160  
640  
1.3  
IS  
VGS = 0V  
A
A
V
TO-220 Outline  
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = 80A, VGS = 0V, Note 1  
A
E
oP  
A1  
H1  
Q
trr  
40  
1.8  
35  
ns  
A
D2  
E1  
D
IF = 80A, VGS = 0V,  
IRM  
QRM  
D1  
-di/dt = 100A/s, VR = 20V  
nC  
A2  
EJECTOR  
PIN  
L1  
L
3X b  
3X b2  
ee  
c
e1  
Notes: 1. Pulse test, t 300s; duty cycle, d  2%.  
1 - Gate  
2,4 - Drain  
3 - Source  
2. On through-hole packages, RDS(on) Kelvin test contact  
location must be 5mm or less from the package body.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXTA160N04T2  
IXTP160N04T2  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
Fig. 1. Output Characteristics @ TJ = 25oC  
300  
250  
200  
150  
100  
50  
160  
140  
120  
100  
80  
V
= 15V  
V
= 15V  
GS  
GS  
10V  
9V  
10V  
9V  
8V  
7V  
8V  
7V  
6V  
5V  
60  
40  
6V  
5V  
20  
0
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
0.0  
0.0  
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 80A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150oC  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
160  
140  
120  
100  
80  
V
= 15V  
GS  
V
= 10V  
GS  
10V  
9V  
8V  
I
= 160A  
D
7V  
6V  
I
= 80A  
D
60  
40  
5V  
20  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 80A Value vs.  
Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
140  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 10V  
15V  
GS  
T = 175oC  
J
120  
100  
80  
60  
40  
20  
0
External Lead Current Limit  
T = 25oC  
J
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
40  
80  
120  
160  
200  
240  
280  
320  
ID - Amperes  
TC - Degrees Centigrade  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXTA160N04T2  
IXTP160N04T2  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
140  
120  
100  
80  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
T
J
= - 40oC  
25oC  
150oC  
T
J
= 150oC  
25oC  
- 40oC  
60  
40  
20  
0
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
1.6  
40  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
300  
250  
200  
150  
100  
50  
V
= 20V  
DS  
I
I
= 80A  
D
G
= 10mA  
T
J
= 150oC  
T
= 25oC  
J
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1.3  
1.4  
1.5  
0
10  
20  
30  
40  
50  
60  
70  
80  
QG - NanoCoulombs  
VSD - Volts  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
10,000  
1,000  
100  
1000  
100  
10  
= 1MHz  
f
R
Limit  
DS(on)  
C
iss  
25μs  
Lead Limit  
100μs  
1ms  
C
oss  
10ms  
T = 175oC  
J
100ms  
DC  
= 25oC  
C
rss  
T
C
Single Pulse  
1
0
5
10  
15  
20  
25  
30  
35  
1
10  
100  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTA160N04T2  
IXTP160N04T2  
Fig. 13. Resistive Turn-on  
Fig. 14. Resistive Turn-on  
Rise Time vs. Junction Temperature  
Rise Time vs. Drain Current  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
29  
28  
27  
26  
25  
24  
23  
22  
21  
R
G
= 5Ω, V = 10V  
GS  
T = 25oC  
J
V
= 20V  
DS  
R
= 5Ω, V = 10V  
GS  
G
I
= 160A  
D
V
= 20V  
DS  
I
= 80A  
D
T = 125oC  
J
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
80  
90  
100  
110  
120  
130  
140  
150  
160  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 16. Resistive Turn-off  
Fig. 15. Resistive Turn-on  
Switching Times vs. Junction Temperature  
Switching Times vs. Gate Resistance  
34  
34  
140  
120  
100  
80  
35  
t r  
td(on)  
t f  
td(off)  
30  
25  
20  
15  
10  
5
TJ = 125oC, V = 10V  
R
= 5Ω,  
V
= 10V  
GS  
30  
26  
22  
18  
14  
10  
30  
26  
22  
18  
14  
10  
I
= 80A  
GS  
G
D
V
= 20V  
V
= 20V  
DS  
DS  
I
= 160A, 80A  
D
I
= 160A  
D
60  
40  
20  
0
0
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
4
6
8
10  
12  
14  
16  
18  
20  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
140  
120  
100  
80  
140  
120  
100  
80  
40  
35  
30  
25  
20  
15  
10  
40  
35  
30  
25  
20  
15  
10  
t f  
td(off)  
t f  
td(off)  
T = 125oC, VGS = 10V  
J
R
G
= 5Ω, VGS = 10V  
VDS = 20V  
VDS = 20V  
T = 125oC  
J
I
= 80A, 160A  
D
60  
60  
40  
40  
T = 25oC  
J
20  
20  
0
0
4
6
8
10  
12  
14  
16  
18  
20  
80  
90  
100  
110  
120  
130  
140  
150  
160  
ID - Amperes  
RG - Ohms  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXTA160N04T2  
IXTP160N04T2  
Fig. 19. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: T_160N04T2 (V4) 7-9-18-C  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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