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IXTC160N10T

型号：

IXTC160N10T

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

182 K

下载PDF手册
Preliminary Technical Information  
TrenchMVTM  
Power MOSFET  
IXTC160N10T  
VDSS = 100  
ID25 = 83  
RDS(on) ≤ 7.5 mΩ  
V
A
(Electrically Isolated Back Surface)  
N-Channel Enhancement Mode  
Avalanche Rated  
Symbol  
Test Conditions  
Maximum Ratings  
ISOPLUS220 (IXTC)  
E153432  
VDSS  
VDGR  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C; RGS = 1 MΩ  
100  
100  
V
V
VGSM  
Transient  
± 20  
V
ID25  
IL  
IDM  
TC = 25°C  
83  
75  
430  
A
A
A
G
D
S
Package Current Limit, RMS  
Isolated back surface  
TC = 25°C, pulse width limited by TJM  
G = Gate  
S = Source  
D = Drain  
IAR  
EAS  
TC = 25°C  
TC = 25°C  
25  
500  
A
mJ  
dv/dt  
PD  
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS  
TJ ≤ 175°C, RG = 5 Ω  
3
V/ns  
Features  
ꢀUltra-low On Resistance  
ꢀUnclamped Inductive Switching (UIS)  
rated  
TC = 25°C  
140  
W
ꢀLow package inductance  
- easy to drive and to protect  
ꢀ175 °C Operating Temperature  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
Advantages  
ꢀ
Easy to mount  
ꢀ
Space savings  
VISOL  
50/60 Hz, t = 1 minute, IISOL < 1 mA, RMS  
Mounting force  
2500  
V
ꢀ
High power density  
FC  
11..65/2.5..15  
2
N/lb.  
g
Applications  
ꢀ
Weight  
Automotive  
- Motor Drives  
- 42V Power Bus  
- ABS Systems  
Symbol  
Test Conditions  
Characteristic Values  
ꢀ
DC/DC Converters and Off-line UPS  
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
ꢀ
Primary Switch for 24V and 48V  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 μA  
VDS = VGS, ID = 250 μA  
VGS = ± 20 V, VDS = 0 V  
100  
V
V
Systems  
ꢀ
Distributed Power Architechtures  
2.5  
4.5  
and VRMs  
ꢀ
Electronic Valve Train Systems  
± 200 nA  
ꢀ
High Current Switching  
IDSS  
VDS = VDSS  
VGS = 0 V  
5 μA  
250 μA  
Applications  
ꢀ
High Voltage Synchronous Recifier  
TJ = 150°C  
RDS(on)  
VGS = 10 V, ID = 25 A, Notes 1, 2  
6.5  
7.5 mΩ  
DS99677(11/06)  
© 2006 IXYS CORPORATION All rights reserved  
IXTC160N10T  
Symbol  
gfs  
Test Conditions  
Characteristic Values  
ISOPLUS220 (IXTC) Outline  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
VDS= 10 V; ID = 60 A, Note 1  
65  
102  
S
Ciss  
Coss  
Crss  
6600  
880  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
135  
td(on)  
tr  
td(off)  
tf  
33  
61  
49  
42  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = 25 A  
RG = 5 Ω (External)  
1.Gate 2. Drain  
3.Source  
Note: Bottom heatsink (Pin 4) is  
electrically isolated from Pins 1,2, and 3.  
Qg(on)  
Qgs  
132  
37  
nC  
nC  
nC  
VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A  
Qgd  
40  
RthJC  
RthCS  
1.06°C/W  
°C/W  
0.5  
Source-Drain Diode  
Characteristic Values  
TJ = 25°C unless otherwise specified)  
Symbol  
IS  
Test Conditions  
Min.  
Typ.  
Max.  
VGS = 0 V  
160  
A
A
ISM  
VSD  
trr  
Pulse width limited by TJM  
IF = 25 A, VGS = 0 V, Note 1  
430  
1.0  
V
IF = 25 A, -di/dt = 100 A/μs  
60  
ns  
VR = 30 V, VGS = 0 V  
Notes: 1. Pulse test: t ≤ 300 μs, duty cycle d ≤ 2 %;  
2. Drain and Source Kelvin contacts must be located less than 5 mm  
from the plastic body.  
PRELIMINARYTECHNICALINFORMATION  
The product presented herein is under development. The Technical Specifications  
offered are derived from data gathered during objective characterizations of preliminary  
engineering lots; but also may yet contain some information supplied during a pre-  
production design evaluation. IXYS reserves the right to change limits, test conditions,  
and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
6,771,478B2 7,071,537  
7,005,734B2  
7,063,975B2  
oneormoreofthefollowingU.S.patents:  
IXTC160N10T  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
160  
140  
120  
100  
80  
300  
275  
250  
225  
200  
175  
150  
125  
100  
75  
V
= 10V  
GS  
V
= 10V  
GS  
9V  
8V  
9V  
8V  
7V  
6V  
5V  
7V  
60  
40  
6V  
2
50  
20  
25  
0
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
0
1
3
4
5
6
7
8
175  
175  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 160A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 150ºC  
160  
140  
120  
100  
80  
2.8  
2.6  
2.4  
2.2  
2
V
= 10V  
8V  
GS  
V
= 10V  
GS  
I
= 160A  
D
7V  
I
= 80A  
D
1.8  
1.6  
1.4  
1.2  
1
6V  
60  
40  
20  
5V  
0.8  
0.6  
0
0
0.4  
0.8  
1.2  
1.6  
2
2.4  
2.8  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 80A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
3.2  
3
External Lead Current Limit  
V
= 10V  
GS  
15V - - - -  
2.8  
2.6  
2.4  
2.2  
2
T = 175ºC  
J
1.8  
1.6  
1.4  
1.2  
1
T = 25ºC  
J
0.8  
0.6  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
50  
100  
150  
200  
250  
300  
TC - Degrees Centigrade  
ID - Amperes  
© 2006 IXYS CORPORATION All rights reserved  
IXTC160N10T  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
200  
180  
160  
140  
120  
100  
80  
140  
120  
100  
80  
T
J
= - 40ºC  
25ºC  
150ºC  
60  
T
J
= 150ºC  
60  
40  
25ºC  
- 40ºC  
40  
20  
20  
0
0
3.5  
4
4.5  
5
5.5  
6
6.5  
7
0
20  
40  
60  
80 100 120 140 160 180 200 220  
ID - Amperes  
VGS - Volts  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
300  
250  
200  
150  
100  
50  
V
= 50V  
DS  
I
I
= 25A  
D
G
= 10mA  
T
J
= 150ºC  
T
J
= 25ºC  
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
1.2  
1.3  
1.4  
0
20  
40  
60  
80  
100  
120  
140  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Maximum Transient Thermal  
Impedance  
10,000  
1,000  
100  
10.00  
1.00  
0.10  
0.01  
C
C
iss  
f = 1 MHz  
oss  
C
rss  
0
5
10  
15  
20  
25  
30  
35  
40  
0.0001  
0.001  
0.01  
0.1  
1
10  
VDS - Volts  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTC160N10T  
Fig. 14. Resistive Turn-on  
Fig. 13. Resistive Turn-on  
Rise Time vs. Drain Current  
Rise Time vs. Junction Temperature  
90  
80  
70  
60  
50  
40  
30  
20  
70  
65  
60  
55  
50  
45  
40  
35  
30  
R
V
V
= 5  
Ω
G
T
J
= 25ºC  
= 10V  
= 50V  
GS  
DS  
R
V
V
= 5  
Ω
G
= 10V  
= 50V  
GS  
DS  
I
= 50A  
D
T
= 125ºC  
J
I
= 25A  
D
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
25  
30  
35  
40  
45  
50  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
170  
65  
60  
55  
50  
45  
40  
35  
30  
90  
120  
115  
110  
105  
100  
95  
t f  
R
td(off) - - - -  
t r  
td(on)  
- - - -  
85  
80  
75  
70  
65  
60  
55  
50  
45  
40  
35  
30  
150  
130  
110  
90  
= 5 , V  
= 10V  
Ω
TJ = 125ºC, V  
= 10V  
G
GS  
GS  
V = 50V  
DS  
V
= 50V  
DS  
I
I
= 25A  
= 50A  
D
D
I
= 50A  
D
I
= 25A  
D
90  
85  
80  
I
= 25A  
D
D
70  
75  
70  
50  
65  
I
= 50A  
45  
30  
60  
4
6
8
10  
12  
14  
16  
18  
20  
25  
35  
55  
65  
75  
85  
95 105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
44  
43  
42  
41  
40  
39  
38  
80  
77  
74  
71  
68  
65  
62  
59  
56  
53  
50  
47  
44  
140  
130  
120  
110  
100  
90  
205  
190  
175  
160  
145  
130  
115  
100  
85  
t f  
R
V
td(off)  
- - - -  
t f td(off)  
- - - -  
= 5 , VGS = 10V  
Ω
G
T
J
= 125ºC, V  
= 10V  
GS  
I
= 25A  
D
TJ = 125ºC  
DS = 50V  
V
= 50V  
DS  
T
J
= 25ºC  
I
= 50A  
D
80  
70  
T
= 125ºC  
J
60  
50  
70  
T
= 25ºC  
J
40  
55  
30  
40  
25  
30  
35  
40  
45  
50  
4
6
8
10  
12  
14  
16  
18  
20  
ID - Amperes  
© 2006 IXYS CORPORATION All rights reserved  
RG - Ohms  
IXYS REF: T_160N10T (5V) 11-16-06-A.xls  
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