IXTK17N120L
IXTX17N120L
Symbol
Test Conditions
Characteristic Values
TO-264 (IXTK) Outline
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 20V, ID = 0.5 • IDSS, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
3.5
5.0
6.5
S
Ciss
Coss
Crss
8300
520
90
pF
pF
pF
td(on)
tr
td(off)
tf
42
31
ns
ns
ns
ns
Resistive Switching Times
V
GS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS
110
83
RG = 2Ω (External)
Qg(on)
Qgs
155
41
nC
nC
nC
VGS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS
Qgd
60
RthJC
RthCS
0.18 °C/W
°C/W
0.15
Safe Operating Area Specification
Symbol
SOA
Test Conditions
Characteristic Values
Min.
Typ.
Max.
VDS = 800V, ID = 0.3A, TC = 60°C, tP = 3s
240
W
PLUS 247TM (IXTX) Outline
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
IS
VGS = 0V
17
A
A
ISM
VSD
trr
Repetitive, Pulse Width Limited by TJM
50
IF = 17A, VGS = 0V, Note 1
1.5
V
IF = IS, -di/dt = 100A/μs, VR = 100V
1830
ns
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Note: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
C
D
E
0.61
20.80 21.34
15.75 16.13
0.80
.024 .031
.819 .840
.620 .635
e
5.45 BSC
.215 BSC
L
L1
19.81 20.32
.780 .800
.150 .170
3.81
4.32
Q
R
5.59
4.32
6.20
4.83
.220 0.244
.170 .190
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
