请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXTH50N30L2

型号：

IXTH50N30L2

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

6 页

PDF大小：

174 K

下载PDF手册
Advance Technical Information  
LinearL2TM  
Power MOSFET  
VDSS = 300V  
ID25 = 50A  
IXTH50N30L2  
RDS(on) 72m  
w/ Extended FBSOA  
N-Channel Enhancement Mode  
TO-247 (IXTH)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
D
TJ = 25C to 150C  
300  
300  
V
V
D (Tab)  
S
VDGR  
TJ = 25C to 150C, RGS = 1M  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
50  
A
A
120  
IA  
TC = 25C  
TC = 25C  
25  
A
J
EAS  
2.5  
PD  
TC = 25C  
540  
W
Features  
TJ  
-55 ... +150  
150  
C  
C  
C  
TJM  
Tstg  
Designed for Linear Operation  
International Standard Package  
Avalanche Rated  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
Guaranteed FBSOA at 75C  
Md  
Mounting Torque  
TO-247  
1.13 / 10  
6
Nm/lb.in  
g
Advantages  
Weight  
Easy to Mount  
Space Savings  
High Power Density  
Symbol  
Test Conditions  
Characteristic Values  
Applications  
(TJ = 25C Unless Otherwise Specified)  
Min.  
300  
2.5  
Typ.  
Max.  
Solid State Circuit Breakers  
Soft Start Controls  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
4.5  
Linear Amplifiers  
Programmable Loads  
Current Regulators  
          100 nA  
IDSS  
10 A  
TJ = 125C  
350 A  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
72 m  
© 2018 IXYS CORPORATION, All Rights Reserved  
DS100892A (2/18)  
IXTH50N30L2  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
13  
22  
31  
S
Ciss  
Coss  
Crss  
9300  
900  
pF  
pF  
pF  
260  
td(on)  
tr  
td(off)  
tf  
36  
ns  
ns  
Resistive Switching Times  
100  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Pins: 1 - Gate  
2,4 - Drain  
140  
50  
ns  
ns  
RG = 2(External)  
3 - Source  
Qg(on)  
Qgs  
330  
52  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
180  
RthJC  
RthCS  
0.23 °C/W  
°C/W  
0.21  
Safe Operating Area Specification  
Characteristic Values  
Symbol  
SOA  
Test Conditions  
Min.  
Typ.  
Max.  
VDS = 300V, ID = 1.1A, TC = 75°C, Tp = 2s  
330  
W
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
IS  
VGS = 0V  
50  
A
A
ISM  
VSD  
Repetitive, pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
200  
1.4  
V
trr  
QRM  
IRM  
430  
11  
52  
ns  
IF = 25A, -di/dt = 100A/μs  
 C  
VR = 100V  
A
Note 1: Pulse test, t 300s, duty cycle, d 2%.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTH50N30L2  
Fig. 1. Output Characteristics @ TJ = 25oC  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
180  
160  
140  
120  
100  
80  
V
= 15V  
12V  
V
= 10V  
GS  
GS  
9V  
8V  
11V  
10V  
9V  
7V  
60  
8V  
7V  
40  
6V  
5V  
20  
6V  
5V  
0
0
0
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
0
5
10  
15  
20  
25  
30  
35  
40  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 25A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125oC  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 10V  
9V  
GS  
V
= 10V  
GS  
8V  
7V  
I
= 50A  
D
I
= 25A  
D
6V  
5V  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
1
2
3
4
5
6
7
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 25A Value vs.  
Drain Current  
Fig. 6. Normalized Breakdown & Threshold Voltages  
vs. Junction Temperature  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
V
= 10V  
GS  
BV  
DSS  
o
T = 125 C  
J
V
GS(th)  
o
T = 25 C  
J
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
160  
20  
40  
60  
80  
100  
120  
140  
TJ - Degrees Centigrade  
ID - Amperes  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXTH50N30L2  
Fig. 7. Maximum Drain Current vs. Case Temperature  
Fig. 8. Input Admittance  
60  
50  
40  
30  
20  
10  
0
70  
60  
50  
40  
30  
20  
10  
0
o
T
J
= 125 C  
o
25 C  
o
- 40 C  
3
4
5
6
7
8
9
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TC - Degrees Centigrade  
VGS - Volts  
Fig. 9. Transconductance  
Fig. 10. Forward Voltage Drop of Intrinsic Diode  
40  
35  
30  
25  
20  
15  
10  
5
160  
140  
120  
100  
80  
o
T = - 40 C  
J
25oC  
125oC  
o
T = 125 C  
J
60  
o
T = 25 C  
J
40  
20  
0
0
0
10  
20  
30  
40  
50  
60  
70  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
VSD - Volts  
ID - Amperes  
Fig. 11. Gate Charge  
Fig. 12. Capacitance  
10  
9
8
7
6
5
4
3
2
1
0
100,000  
10,000  
1,000  
100  
V
= 150V  
= 1 MHz  
f
DS  
I
I
= 25A  
D
G
= 10mA  
C
iss  
C
C
oss  
rss  
0
50  
100  
150  
200  
250  
300  
350  
0
5
10  
15  
20  
25  
30  
35  
40  
QG - NanoCoulombs  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
VDS - Volts  
IXTH50N30L2  
Fig. 13. Forward-Bias Safe Operating Area  
@ TC = 25oC  
Fig. 14. Forward-Bias Safe Operating Area  
@ TC = 75oC  
1,000  
100  
10  
1,000  
100  
10  
R
DS(  
on  
Limit  
)
R
DS(  
on  
Limit  
)
25μs  
25μs  
100μs  
100μs  
1ms  
1ms  
o
o
10ms  
T = 150 C  
J
T = 150 C  
J
o
o
T
= 75 C  
10ms  
T
= 25 C  
C
C
100ms  
Single Pulse  
Single Pulse  
100ms  
DC  
DC  
1
1
1001
10  
100  
1,000  
1
10  
1,000  
VDS - Volts  
VDS - Volts  
Fig. 15. Maximum Transient Thermal Impedance  
aaaa  
0.4  
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_50N30L2 (8R-W32) 2-12-18  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
厂商 型号 描述 页数 下载

IXYS

 		IXTA-200N085T N沟道增强模式额定雪崩[ N-Channel Enhancement Mode Avalanche Rated ] 5 页

LITTELFUSE

 		IXTA02N250 [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN ] 5 页

IXYS

 		IXTA02N250HV [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC PACKAGE-3 ] 5 页

LITTELFUSE

 		IXTA02N250HV [ Power Field-Effect Transistor, ] 6 页

IXYS

 		IXTA02N250HV-TRL [ Power Field-Effect Transistor, ] 5 页

IXYS

 		IXTA02N450HV 高电压功率MOSFET[ High Voltage Power MOSFETs ] 5 页

IXYS

 		IXTA05N100 高电压的MOSFET[ High Voltage MOSFET ] 4 页

IXYS

 		IXTA05N100-TRL [ Power Field-Effect Transistor, ] 5 页

LITTELFUSE

 		IXTA05N100HVTRL [ Power Field-Effect Transistor, 0.75A I(D), 1000V, 17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 2 PIN ] 4 页

IXYS

 		IXTA05N100P [ Fast Intrinsic Diode ] 7 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.177319s