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IXTH140N075L2

型号：

IXTH140N075L2

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

256 K

下载PDF手册
Preliminary Technical Information  
LinearL2TM Power  
MOSFET w/Extended  
FBSOA  
VDSS  
ID25  
= 75V  
= 140A  
IXTT140N075L2HV  
IXTH140N075L2  
RDS(on) < 11m  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-268HV (IXTT)  
G
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
D (Tab)  
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
75  
75  
V
V
VDGR  
TO-247 (IXTH)  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
ID25  
IDM  
TC = 25C  
140  
500  
A
A
G
D
TC = 25C, Pulse Width Limited by TJM  
S
D (Tab)  
= Drain  
IA  
EAS  
TC = 25C  
TC = 25C  
140  
1.5  
A
J
G = Gate  
S = Source  
D
PD  
TC = 25C  
540  
W
Tab = Drain  
TJ  
-55...+150  
150  
C  
C  
C  
TJM  
Tstg  
-55...+150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Features  
Designed for Linear Operation  
International Standard Packages  
AvalancheRated  
Md  
Mounting Torque (TO-247)  
1.13/10  
Nm/lb.in  
Weight  
TO-268HV  
TO-247  
4
6
g
g
Guaranteed FBSOA at 75C  
Advantages  
Easy to Mount  
Space Savings  
High Power Density  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
(TJ = 25C, Unless Otherwise Specified)  
Solid State Circuit Breakers  
Soft Start Controls  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
75  
V
V
Linear Amplifiers  
2.0  
4.5  
Programmable Loads  
Current Regulators  
100 nA  
A  
IDSS  
5
TJ = 125C  
25 A  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
11 m  
DS100774A(5/17)  
© 2017 IXYS CORPORATION, All rights reserved  
IXTT140N075L2HV  
IXTH140N075L2  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 60A, Note 1  
Gate Input Resistance  
50  
65  
80  
S
RGi  
1.24  
Ciss  
Coss  
Crss  
9300  
2190  
750  
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
td(on)  
tr  
td(off)  
tf  
26  
83  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
100  
33  
RG = 2(External)  
Qg(on)  
Qgs  
275  
40  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
108  
RthJC  
RthCS  
0.23 C/W  
C/W  
TO-247  
0.21  
Safe Operating Area Specification  
Symbol  
SOA  
Test Conditions  
Characteristic Values  
Min.  
Typ.  
Max.  
VDS = 75V, ID = 4.35A, TC = 75C, Tp = 5s  
326  
W
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
140  
560  
1.4  
IS  
VGS = 0V  
A
A
V
ISM  
VSD  
Repetitive, pulse width limited by TJM  
IF = 100A, VGS = 0V, Note 1  
trr  
IRM  
QRM  
200  
14.0  
1.4  
ns  
A
μC  
IF = 70A, -di/dt = 100A/s,  
VR = 37.5V, VGS = 0V  
Note:  
1. Pulse test, t 300s; duty cycle, d  2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTT140N075L2HV  
IXTH140N075L2  
Fig. 1. Output Characteristics @ TJ = 25oC  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
140  
120  
100  
80  
700  
600  
500  
400  
300  
200  
100  
0
V
= 20V  
GS  
V
= 20V  
GS  
8V  
7V  
12V  
10V  
9V  
12V  
10V  
9V  
6V  
5V  
60  
40  
8V  
7V  
6V  
5V  
20  
0
0.0  
0.5  
1.0  
1.5  
2.0  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 70A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125oC  
140  
120  
100  
80  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 20V  
GS  
V
= 10V  
GS  
8V  
7V  
12V  
10V  
9V  
I
= 140A  
D
6V  
60  
I
= 70A  
D
40  
5V  
4V  
20  
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 70A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
160  
140  
120  
100  
80  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
V
= 10V  
20V  
GS  
T = 125oC  
J
60  
T = 25oC  
J
40  
20  
0
0
100  
200  
300  
400  
500  
600  
700  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
ID - Amperes  
TC - Degrees Centigrade  
© 2017 IXYS CORPORATION, All rights reserved  
IXTT140N075L2HV  
IXTH140N075L2  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
400  
350  
300  
250  
200  
150  
100  
50  
140  
120  
100  
80  
T
J
= - 40oC  
T
J
= - 40oC  
25oC  
125oC  
25oC  
125oC  
60  
40  
20  
0
0
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5  
VGS - Volts  
0
50  
100  
150  
200  
250  
300  
350  
400  
450  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
600  
500  
400  
300  
200  
100  
0
V
= 37.5V  
DS  
I
I
= 70A  
D
G
= 10mA  
T
J
= 125oC  
T
= 25oC  
1.2  
J
0
40  
80  
120  
160  
200  
240  
280  
0.2  
0.4  
0.6  
0.8  
1.0  
1.4  
1.6  
1.8  
2.0  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Maximum Transient Thermal Impedance  
aaaaa  
100,000  
10,000  
1,000  
100  
0.4  
f
= 1 MHz  
0.1  
C
C
iss  
oss  
0.01  
C
rss  
0.001  
0
5
10  
15  
20  
25  
30  
35  
40  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTT140N075L2HV  
IXTH140N075L2  
Fig. 13. Forward-Bias Safe Operating Area  
@ TC = 25oC  
Fig. 14. Forward-Bias Safe Operating Area  
@ TC = 75oC  
1,000  
100  
10  
1,000  
100  
10  
25μs  
25μs  
R
Limit  
DS(on)  
R
Limit  
DS(on)  
100μs  
100μs  
1ms  
1ms  
10ms  
10ms  
100ms  
DC  
100ms  
DC  
TJ = 150oC  
C = 75oC  
Single Pulse  
TJ = 150oC  
C = 25oC  
Single Pulse  
T
T
1
1
1
10  
100  
1
10  
100  
VDS - Volts  
VDS - Volts  
© 2017 IXYS CORPORATION, All rights reserved  
IXYS REF: T_140N075L2(8R-T07)1-12-17  
IXTT140N075L2HV  
IXTH140N075L2  
TO-268HV Outline  
PINS:  
1 - Gate 2 - Source  
3 - Drain  
TO-247 Outline  
D
A
A
0P  
+
B
O 0K M D B M  
E
A2  
A2  
Q
S
D2  
+
+
R
D1  
D
0P1  
4
1
2
3
ixys option  
C
L1  
E1  
L
A1  
b
b2  
c
b4  
PINS: 1 - Gate  
e
+
O
2, 4 - Drain  
3 - Source  
J
M
C
A M  
IXYS reserves the right to change limits, test conditions, and dimensions.  
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