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IXTP32N65XM

型号：

IXTP32N65XM

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

136 K

下载PDF手册
Preliminary Technical Information  
X-Class  
Power MOSFET  
VDSS = 650V  
ID25 = 14A  
IXTP32N65XM  
RDS(on) 135m  
N-Channel Enhancement Mode  
OVERMOLDED  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
650  
650  
V
V
G
D
S
VDGR  
TJ = 25C to 150C, RGS = 1M  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
G = Gate  
S = Source  
D = Drain  
ID25  
IDM  
TC = 25C  
14  
64  
A
A
TC = 25C, Pulse Width Limited by TJM  
dv/dt  
PD  
IS ID25, VDD VDSS, TJ 150°C  
TC = 25C  
30  
78  
V/ns  
W
TJ  
-55 ... +150  
150  
C  
C  
C  
TJM  
Tstg  
Features  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
Low RDS(ON) and QG  
Low Package Inductance  
Md  
Mounting Torque  
1.13 / 10  
2.5  
Nm/lb.in  
g
Weight  
Advantages  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
Applications  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
Robotics and Servo Controls  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
650  
V
V
3.0  
5.5  
100 nA  
A  
IDSS  
5
TJ = 125C  
50 A  
RDS(on)  
VGS = 10V, ID = 16A, Note 1  
135 m  
DS100589D(6/15)  
© 2015 IXYS CORPORATION, All Rights Reserved  
IXTP32N65XM  
Symbol  
Test Conditions  
Characteristic Values  
OVERMOLDED TO-220  
(IXTP...M)  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
gfs  
VDS = 10V, ID = 16A, Note 1  
Gate Input Resistance  
13  
22  
S
RGi  
2.6  
Ciss  
Coss  
Crss  
2205  
1600  
30  
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
1
2
3
Effective Output Capacitance  
Co(er)  
Co(tr)  
111  
349  
pF  
pF  
Energy related  
Time related  
VGS = 0V  
VDS = 0.8 • VDSS  
td(on)  
tr  
td(off)  
tf  
23  
49  
58  
28  
ns  
ns  
ns  
ns  
Resistive Switching Times  
GS = 10V, VDS = 0.5 • VDSS, ID = 16A  
V
RG = 5(External)  
Qg(on)  
Qgs  
54  
12  
29  
nC  
nC  
nC  
Terminals: 1 - Gate  
2 - Drain  
VGS = 10V, VDS = 0.5 • VDSS, ID = 16A  
3 - Source  
Qgd  
RthJC  
1.6 C/W  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
IS  
VGS = 0V, Note1  
32  
A
A
ISM  
VSD  
Repetitive, pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
128  
1.4  
V
trr  
QRM  
IRM  
400  
6.1  
31  
ns  
IF = 16A, -di/dt = 100A/μs  
C  
VR = 100V  
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
PRELIMANARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXTP32N65XM  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
32  
28  
24  
20  
16  
12  
8
70  
60  
50  
40  
30  
20  
10  
0
VGS = 10V  
V
= 10V  
GS  
9V  
8V  
8V  
7V  
7V  
6V  
4
6V  
0
0
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
12  
70  
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 16A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
32  
28  
24  
20  
16  
12  
8
3.8  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
V
= 10V  
8V  
GS  
V
= 10V  
GS  
7V  
I
= 32A  
D
I
= 16A  
D
6V  
5V  
4
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
1
2
3
4
5
6
7
8
9
10  
11  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 16A Value vs.  
Drain Current  
Fig. 6. Normalized Breakdown & Threshold Voltages  
vs. Junction Temperature  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
V
= 10V  
GS  
T = 125ºC  
J
BV  
DSS  
T = 25ºC  
J
V
GS(th)  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
10  
20  
30  
40  
50  
60  
TJ - Degrees Centigrade  
ID - Amperes  
© 2015 IXYS CORPORATION, All Rights Reserved  
IXTP32N65XM  
Fig. 7. Maximum Drain Current vs.  
Case Temperature  
Fig. 8. Input Admittance  
45  
40  
35  
30  
25  
20  
15  
10  
5
14  
12  
10  
8
T
J
= 125ºC  
6
25ºC  
- 40ºC  
4
2
0
0
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TC - Degrees Centigrade  
VGS - Volts  
Fig. 10. Forward Voltage Drop of Intrinsic Diode  
Fig. 9. Transconductance  
40  
35  
30  
25  
20  
15  
10  
5
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
T
J
= - 40ºC  
25ºC  
125ºC  
T
J
= 125ºC  
T
J
= 25ºC  
0
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
ID - Amperes  
VSD - Volts  
Fig. 12. Capacitance  
Fig. 11. Gate Charge  
10  
8
10,000  
1,000  
100  
10  
V
= 325V  
DS  
I
I
= 16A  
D
G
C
= 10mA  
iss  
6
C
C
oss  
rss  
4
2
= 1 MHz  
f
0
1
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
1
10  
100  
1000  
VDS - Volts  
QG - NanoCoulombs  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTP32N65XM  
Fig. 13. Output Capacitance Stored Energy  
Fig. 14. Forward-Bias Safe Operating Area  
22  
20  
18  
16  
14  
12  
10  
8
100  
10  
1
R
DS(  
on  
Limit  
)
25µs  
100µs  
1ms  
6
T
= 150ºC  
= 25ºC  
J
4
T
C
Single Pulse  
2
10ms  
0.1  
0
10  
100  
1,000  
0
100  
200  
300  
400  
500  
600  
VDS - Volts  
VDS - Volts  
Fig. 15. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Second  
© 2015 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_32N65X(J7) 6-17-15-A  
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