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IXTC220N055T

型号：

IXTC220N055T

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

181 K

下载PDF手册
Preliminary Technical Information  
TrenchMVTM  
Power MOSFET  
IXTC220N055T  
VDSS = 55  
ID25 = 130  
RDS(on) ≤ 4.4 mΩ  
V
A
(Electrically Isolated Back Surface)  
N-Channel Enhancement Mode  
Avalanche Rated  
Symbol  
Test Conditions  
Maximum Ratings  
ISOPLUS220 (IXTC)  
E153432  
VDSS  
VDGR  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C; RGS = 1 MΩ  
55  
55  
V
V
VGSM  
Transient  
± 20  
V
ID25  
ILRMS  
IDM  
TC = 25°C  
130  
75  
600  
A
A
A
G
D
S
Package Current Limit, RMS  
Isolated back surface  
TC = 25°C, pulse width limited by TJM  
G = Gate  
S = Source  
D = Drain  
IAR  
EAS  
TC = 25°C  
TC = 25°C  
25  
500  
A
mJ  
dv/dt  
PD  
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS  
TJ ≤ 175°C, RG = 5 Ω  
3
V/ns  
Features  
ꢀUltra-low On Resistance  
ꢀUnclamped Inductive Switching (UIS)  
rated  
TC = 25°C  
150  
W
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
ꢀLow package inductance  
- easy to drive and to protect  
ꢀ175 °C Operating Temperature  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
Advantages  
ꢀ
Easy to mount  
VISOL  
FC  
50/60 Hz, t = 1 minute, IISOL < 1 mA, RMS  
Mounting force  
2500  
11..65/2.5..15  
2
V
N/lb.  
g
ꢀ
Space savings  
ꢀ
High power density  
Weight  
Applications  
ꢀ
Automotive  
- Motor Drives  
- High Side Switch  
- 12VBattery  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
- ABS Systems  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 μA  
VDS = VGS, ID = 250 μA  
VGS = ± 20 V, VDS = 0 V  
55  
V
V
ꢀ
DC/DC Converters and Off-line UPS  
ꢀ
Primary- Side Switch  
2.0  
4.0  
ꢀ
High Current Switching  
Applications  
± 200 nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
5 μA  
250 μA  
TJ = 150°C  
RDS(on)  
VGS = 10 V, ID = 25 A, Note 1  
3.4  
4.4 mΩ  
DS99674(11/06)  
© 2006 IXYS CORPORATION All rights reserved  
IXTC220N055T  
Symbol  
gfs  
Test Conditions  
Characteristic Values  
ISOPLUS220 (IXTC) Outline  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
VDS = 10 V, ID = 60 A, Note 1  
75  
120  
S
Ciss  
Coss  
Crss  
7200  
1270  
285  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
36  
62  
53  
53  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = 25 A  
RG = 5 Ω (External)  
1.Gate 2. Drain  
3.Source  
Note: Bottom heatsink (Pin 4) is  
electrically isolated from Pins 1,2, and 3.  
Qg(on)  
Qgs  
158  
42  
nC  
nC  
nC  
VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A  
Qgd  
46  
RthJC  
RthCS  
1.0°C/W  
°C/W  
0.25  
Source-Drain Diode  
Characteristic Values  
TJ = 25°C unless otherwise specified)  
Symbol  
IS  
Test Conditions  
Min.  
Typ.  
Max.  
VGS = 0 V  
220  
A
A
ISM  
VSD  
trr  
Pulse width limited by TJM  
IF = 25 A, VGS = 0 V, Note 1  
600  
1.0  
V
IF = 25 A, -di/dt = 100 A/μs  
30  
ns  
VR = 30 V, VGS = 0 V  
Notes: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %;  
2. Drain and Source Kelvin contacts must be located less than 5 mm from  
the plastic body.  
PRELIMINARYTECHNICALINFORMATION  
The product presented herein is under development. The Technical Specifications  
offered are derived from data gathered during objective characterizations of preliminary  
engineering lots; but also may yet contain some information supplied during a pre-  
production design evaluation. IXYS reserves the right to change limits, test conditions,  
and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844  
one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405B2 6,759,692  
6,710,463  
7,005,734 B2  
7,063,975 B2  
6771478 B2 7,071,537  
IXTC220N055T  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
220  
200  
180  
160  
140  
120  
100  
80  
320  
280  
240  
200  
160  
120  
80  
V
= 10V  
GS  
V
= 10V  
GS  
9V  
8V  
9V  
8V  
7V  
6V  
7V  
6V  
60  
40  
40  
20  
5V  
5V  
1
0
0
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
1.4  
320  
0
0.5  
1.5  
2
2.5  
3
3.5  
4
4.5  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 110A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 150ºC  
200  
180  
160  
140  
120  
100  
80  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 10V  
GS  
V
= 10V  
GS  
9V  
8V  
7V  
I
= 220A  
D
6V  
I
= 110A  
D
5V  
60  
40  
20  
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 110A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
2.2  
2
External Lead Current Limit  
T = 175ºC  
J
1.8  
1.6  
1.4  
1.2  
1
V
= 10V  
GS  
15V - - - -  
T = 25ºC  
J
0.8  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0
40  
80  
120  
160  
200  
240  
280  
TC - Degrees Centigrade  
ID - Amperes  
© 2006 IXYS CORPORATION All rights reserved  
IXTC220N055T  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
180  
160  
140  
120  
100  
80  
270  
240  
210  
180  
150  
120  
90  
T
J
= - 40ºC  
25ºC  
150ºC  
60  
T
J
= 125ºC  
40  
60  
25ºC  
-40ºC  
20  
30  
0
0
0
30  
60  
90  
120  
150  
180  
210  
240  
270  
160  
10  
3.5  
0.4  
0
4
4.5  
5
5.5  
6
6.5  
1.3  
40  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
300  
270  
240  
210  
180  
150  
120  
90  
10  
9
8
7
6
5
4
3
2
1
0
V
= 27.5V  
DS  
I
I
= 25A  
D
G
= 10mA  
T
= 150ºC  
J
T
= 25ºC  
J
60  
30  
0
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
1.2  
0
20  
40  
60  
80  
100  
120  
140  
QG - NanoCoulombs  
VSD - Volts  
Fig. 11. Capacitance  
Fig. 12. Maximum Transient Thermal  
Impedance  
10,000  
1,000  
100  
10.00  
1.00  
0.10  
0.01  
C
iss  
C
oss  
C
rss  
f = 1 MHz  
5
10  
15  
20  
25  
30  
35  
0.0001  
0.001  
0.01  
0.1  
1
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
Pulse Width - Seconds  
IXTC220N055T  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
75  
70  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
75  
70  
65  
60  
55  
50  
45  
40  
35  
30  
25  
R
= 5  
Ω
G
V
V
= 10V  
= 30V  
GS  
DS  
T = 25ºC  
J
R
= 5  
Ω
G
V
V
= 10V  
= 30V  
GS  
DS  
I
= 50A  
D
I
= 25A  
D
T = 125ºC  
J
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
25  
30  
35  
40  
45  
50  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 16. Resistive Turn-off Switch-  
ing Times vs. Junction Temperature  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
160  
140  
120  
100  
80  
65  
60  
55  
50  
45  
40  
35  
30  
65  
90  
86  
82  
78  
74  
70  
66  
62  
58  
54  
50  
I
= 25A, 50A  
D
t r  
td(on)  
- - - -  
63  
61  
59  
57  
55  
53  
51  
49  
47  
45  
TJ = 125ºC, V = 10V  
GS  
V
= 30V  
DS  
I
= 50A, 25A  
D
I
= 50A, 25A  
D
60  
t f  
R
td(off)  
- - - -  
40  
= 5 , V = 10V  
Ω
G
GS  
V
= 30V  
DS  
20  
4
6
8
10  
12  
14  
16  
18  
20  
25  
35  
45 55  
65  
75  
85  
95 105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 18. Resistive Turn-off  
Fig. 17. Resistive Turn-off  
Switching Times vs. Gate Resistance  
Switching Times vs. Drain Current  
64  
62  
60  
58  
56  
54  
52  
50  
48  
46  
84  
80  
76  
72  
68  
64  
60  
56  
52  
48  
190  
170  
150  
130  
110  
90  
260  
230  
200  
170  
140  
110  
80  
TJ = 125ºC  
t f  
td(off)  
- - - -  
T = 125ºC, VGS = 10V  
J
V
DS = 30V  
t f  
R
td(off)  
- - - -  
= 5 , VGS = 10V  
Ω
G
I
= 25A  
D
V
DS = 30V  
I
= 50A  
D
70  
T = 25ºC  
J
50  
50  
24  
28  
32  
36  
40  
44  
48  
4
6
8
10  
12  
14  
16  
18  
20  
RG - Ohms  
ID - Amperes  
© 2006 IXYS CORPORATION All rights reserved  
IXYS REF: T_220N055T(5V) 8-29-06-A.XLS  
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