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IXTP1N100P

型号：

IXTP1N100P

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

6 页

PDF大小：

296 K

下载PDF手册
PolarTM  
Power MOSFET  
IXTY1N100P  
IXTA1N100P  
IXTP1N100P  
VDSS = 1000V  
ID25 = 1A  
RDS(on) 15  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-252 (IXTY)  
G
S
D (Tab)  
TO-263 (IXTA)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
1000  
1000  
V
V
G
S
VDGR  
TJ = 25C to 150C, RGS = 1M  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
D (Tab)  
TO-220 (IXTP)  
ID25  
IDM  
TC = 25C  
1.0  
1.8  
A
A
TC = 25C, Pulse Width Limited by TJM  
IA  
TC = 25C  
TC = 25C  
1.0  
A
G
D
D (Tab)  
EAS  
100  
mJ  
S
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
10  
50  
V/ns  
W
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
TJ  
-55 ... +150  
150  
C  
C  
C  
TJM  
Tstg  
-55 ... +150  
Features  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
International Standard Packages  
Low QG  
Avalanche Rated  
Low Package Inductance  
Fast Intrinsic Rectifier  
FC  
Md  
Mounting Force (TO-263)  
Mounting Torque (TO-220)  
10..65 / 2.2..14.6  
1.13 / 10  
N/lb  
Nm/lb.in  
Weight  
TO-252  
TO-263  
TO-220  
0.35  
2.50  
3.00  
g
g
g
Advantages  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 50μA  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
1000  
V
V
2.5  
4.5  
DC-DC Converters  
Switch-Mode and Resonant-Mode  
50 nA  
A  
Power Supplies  
AC and DC Motor Drives  
IDSS  
5
Lasers Drivers  
TJ = 125C  
100 A  
  
Robotics and Servo Controls  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
12.2  
15.0   
DS99234H(8/17)  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXTY1N100P IXTA1N100P  
IXTP1N100P  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
gfs  
VDS = 30V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
0.45  
0.78  
S
Ciss  
Coss  
Crss  
331  
24  
pF  
pF  
pF  
5.5  
Qg(on)  
Qgs  
15.5  
4.1  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
8.0  
td(on)  
tr  
td(off)  
tf  
20  
26  
55  
24  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 50(External)  
RthJC  
RthCS  
2.5 C/W  
C/W  
TO-220  
0.50  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
IS  
VGS = 0V  
1.0  
A
A
ISM  
VSD  
trr  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
3.0  
1.5  
V
IF = 1A, -di/dt = 100A/μs, VR = 100V  
750  
ns  
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXTY1N100P IXTA1N100P  
IXTP1N100P  
Fig. 1. Output Characteristics @ TJ = 25oC  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
V
= 10V  
GS  
V
= 10V  
7V  
GS  
8V  
7V  
6V  
6V  
5V  
5V  
0
1
2
3
4
5
6
7
8
9
10 11  
12 13  
14  
0
5
10  
15  
20  
25  
30  
150  
150  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 0.5A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125oC  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
1
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
V
= 10V  
7V  
GS  
V
= 10V  
GS  
I
= 1.0A  
D
6V  
I
= 0.5A  
D
5V  
0
5
10  
15  
20  
25  
30  
-50  
-25  
0
25  
50  
75  
100  
125  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 0.5A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs. Case Temperature  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
V
= 10V  
GS  
T = 125oC  
J
T = 25oC  
J
-50  
-25  
0
25  
50  
75  
100  
125  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
TC - Degrees Centigrade  
ID - Amperes  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXTY1N100P IXTA1N100P  
IXTP1N100P  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
T
J
= - 40oC  
25oC  
T
J
= 125oC  
25oC  
- 40oC  
125oC  
3.0  
0.4  
0
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
0.9  
40  
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
16  
10  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
V
= 500V  
DS  
I
I
= 0.5A  
D
G
= 10mA  
T
= 125oC  
J
T
= 25oC  
J
0.45  
0.5  
0.55  
0.6  
0.65  
0.7  
0.75  
0.8  
0.85  
0
2
4
6
8
10  
12  
14  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Maximum Transient Thermal Impedance  
10  
1,000  
100  
10  
C
iss  
C
oss  
1
C
rss  
f
= 1 MHz  
1
0.1  
5
10  
15  
20  
25  
30  
35  
0.0001  
0.001  
0.01  
0.1  
1
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
Pulse Width - Seconds  
IXTY1N100P IXTA1N100P  
IXTP1N100P  
TO-252 AA Outline  
TO-263 Outline  
TO-220 Outline  
A
A
E
b3  
A
C2  
E
E1  
4
c2  
L3  
E
oP  
A1  
4
L1  
D1  
D
H1  
A1  
A2  
Q
L2  
H
H
A1  
L4  
1
3
2
1
2
3
D2  
E1  
D
L1  
b2  
L
c
b2  
b
L3  
c
D1  
1 - Gate  
2,4 - Drain  
3 - Source  
e
e
e
e1  
0.43 [11.0]  
L2  
e1  
0  
0
A2  
5.55MIN  
OPTIONAL  
EJECTOR  
PIN  
0.34 [8.7]  
L1  
0.66 [16.6]  
A2  
L
6.50MIN  
4
1 - Gate  
2,4 - Drain  
3 - Source  
0.20 [5.0]  
0.10 [2.5]  
0.12 [3.0]  
0.06 [1.6]  
6.40  
2.28  
3X b  
3X b2  
e
c
2.85MIN  
1.25MIN  
e1  
BOTTOM  
VIEW  
1 - Gate  
2,4 - Drain  
3 - Source  
LAND PATTERN RECOMMENDATION  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_1N100P(1C) 4-03-08  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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