请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXTH48N65X2

型号：

IXTH48N65X2

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

6 页

PDF大小：

167 K

下载PDF手册
X2-Class  
Power MOSFET  
VDSS = 650V  
ID25 = 48A  
RDS(on) 65m  
IXTH48N65X2  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-247  
G
D
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
S
D (Tab)  
D = Drain  
TJ = 25C to 150C  
650  
650  
V
V
G = Gate  
S = Source  
VDGR  
TJ = 25C to 150C, RGS = 1M  
Tab = Drain  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
48  
96  
A
A
IA  
TC = 25C  
TC = 25C  
20  
A
J
EAS  
1.5  
Features  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
15  
V/ns  
W
660  
International Standard Package  
Low RDS(ON) and QG  
TJ  
-55 ... +150  
150  
C  
C  
C  
Avalanche Rated  
TJM  
Tstg  
Low Package Inductance  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Advantages  
Md  
Mounting Torque  
1.13 / 10  
6
Nm/lb.in  
g
High Power Density  
Easy to Mount  
Space Savings  
Weight  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
Robotics and Servo Controls  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 250μA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
650  
V
V
3.0  
5.0  
100 nA  
IDSS  
10 A  
TJ = 125C  
200 A  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
65 m  
DS100676B(4/18)  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXTH48N65X2  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 (IXTH) Outline  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
D
A
A
0P  
+
B
O 0K M D B M  
E
+
A2  
A2  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
Gate Input Resistance  
24  
40  
S
Q
S
D2  
+
R
RGi  
1.2  
D1  
D
0P1  
4
Ciss  
Coss  
Crss  
4300  
3280  
6.4  
pF  
pF  
pF  
1
2
3
ixys option  
C
L1  
VGS = 0V, VDS = 25V, f = 1MHz  
E1  
L
Effective Output Capacitance  
A1  
b
b2  
Co(er)  
Co(tr)  
150  
665  
pF  
pF  
c
Energy related  
Time related  
VGS = 0V  
VDS = 0.8 • VDSS  
b4  
PINS: 1 - Gate  
e
+
O
2, 4 - Drain  
3 - Source  
J
M
C
A M  
td(on)  
tr  
td(off)  
tf  
19  
26  
50  
15  
ns  
ns  
ns  
ns  
Resistive Switching Times  
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
V
RG = 3(External)  
Qg(on)  
Qgs  
76  
22  
28  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
RthJC  
RthCS  
0.19 C/W  
C/W  
0.21  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
IS  
VGS = 0V  
48  
A
ISM  
VSD  
Repetitive, pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
192  
1.4  
A
V
trr  
QRM  
IRM  
400  
6
30  
ns  
IF = 24A, -di/dt = 100A/μs  
μC  
VR = 100V  
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXTH48N65X2  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
Fig. 1. Output Characteristics @ TJ = 25oC  
48  
40  
32  
24  
16  
8
140  
120  
100  
80  
V
= 10V  
8V  
V
= 10V  
9V  
GS  
GS  
7V  
8V  
7V  
60  
6V  
5V  
40  
6V  
5V  
20  
0
0
0
0
0
0.5  
1
1.5  
2
2.5  
3
0
5
10  
15  
20  
25  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 24A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125oC  
48  
40  
32  
24  
16  
8
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
V
= 10V  
8V  
GS  
V
= 10V  
GS  
7V  
I
= 48A  
D
6V  
5V  
I
= 24A  
D
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
1
2
3
4
5
6
7
8
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 24A Value vs.  
Drain Current  
Fig. 6. Normalized Breakdown & Threshold Voltages  
vs. Junction Temperature  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
V
= 10V  
GS  
BV  
DSS  
T = 125oC  
J
V
GS(th)  
T = 25oC  
J
20  
40  
60  
80  
100  
120  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
160  
TJ - Degrees Centigrade  
ID - Amperes  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXTH48N65X2  
Fig. 7. Maximum Drain Current vs. Case Temperature  
Fig. 8. Input Admittance  
56  
48  
40  
32  
24  
16  
8
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
T
J
= 125oC  
25oC  
- 40oC  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
3.5  
0.3  
1
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
TC - Degrees Centigrade  
VGS - Volts  
Fig. 9. Transconductance  
Fig. 10. Forward Voltage Drop of Intrinsic Diode  
80  
70  
60  
50  
40  
30  
20  
10  
0
160  
140  
120  
100  
80  
T
= - 40oC  
J
25oC  
125oC  
T
J
= 125oC  
60  
T
= 25oC  
J
40  
20  
0
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
ID - Amperes  
VSD - Volts  
Fig. 12. Capacitance  
Fig. 11. Gate Charge  
100,000  
10,000  
1,000  
100  
10  
8
V
= 325V  
DS  
I
I
= 24A  
D
G
C
iss  
= 10mA  
6
C
oss  
4
2
10  
= 1 MHz  
f
C
rss  
0
1
0
10  
20  
30  
40  
50  
60  
70  
80  
10  
100  
1000  
VDS - Volts  
QG - NanoCoulombs  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTH48N65X2  
Fig. 13. Output Capacitance Stored Energy  
Fig. 14. Forward-Bias Safe Operating Area  
35  
30  
25  
20  
15  
10  
5
1000  
100  
10  
R
Limit  
)
DS(  
on  
25μs  
100μs  
1
T = 150oC  
J
T
= 25oC  
1ms  
C
Single Pulse  
10ms  
0
0.1  
0
100  
200  
300  
400  
500  
600  
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
Fig. 15. Maximum Transient Thermal Impedance  
aaaaa  
0.3  
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_48N65X2 (X6-S602) 1-06-16  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
厂商 型号 描述 页数 下载

IXYS

 		IXTA-200N085T N沟道增强模式额定雪崩[ N-Channel Enhancement Mode Avalanche Rated ] 5 页

LITTELFUSE

 		IXTA02N250 [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN ] 5 页

IXYS

 		IXTA02N250HV [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC PACKAGE-3 ] 5 页

LITTELFUSE

 		IXTA02N250HV [ Power Field-Effect Transistor, ] 6 页

IXYS

 		IXTA02N250HV-TRL [ Power Field-Effect Transistor, ] 5 页

IXYS

 		IXTA02N450HV 高电压功率MOSFET[ High Voltage Power MOSFETs ] 5 页

IXYS

 		IXTA05N100 高电压的MOSFET[ High Voltage MOSFET ] 4 页

IXYS

 		IXTA05N100-TRL [ Power Field-Effect Transistor, ] 5 页

LITTELFUSE

 		IXTA05N100HVTRL [ Power Field-Effect Transistor, 0.75A I(D), 1000V, 17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 2 PIN ] 4 页

IXYS

 		IXTA05N100P [ Fast Intrinsic Diode ] 7 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.273953s