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IXTS01N90P-223

型号：

IXTS01N90P-223

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

7 页

PDF大小：

233 K

下载PDF手册
Advance Technical Information  
PolarTM  
Power MOSFET  
IXTS01N90P-89  
IXTS01N90P-223  
VDSS = 900V  
ID25 = 100mA  
RDS(on) 75  
N-Channel Enhancement Mode  
SOT-89  
G
D
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
D (Tab)  
TJ = 25C to 150C  
900  
900  
V
V
SOT-223  
VDGR  
TJ = 25C to 150C, RGS = 1M  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
100  
450  
mA  
mA  
G
D
S
D (Tab)  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
10  
25  
V/ns  
W
G = Gate  
D
= Drain  
S = Source  
Tab = Drain  
TJ  
-55 ... +150  
150  
C  
C  
C  
TJM  
Tstg  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Weight  
SOT-89  
SOT-223  
0.35  
0.40  
g
g
Features  
High Voltage, Low Leakage Mosfet  
in SMD Package  
Suitable for VGE = 5V Drive  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 100μA  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
900  
V
V
DC-DC Converters  
Switch-Mode and Resonant-Mode  
1.5  
3.0  
Power Supplies  
25 nA  
  
Protection Circuits  
IDSS  
25 nA  
TJ = 125C  
2
A  
RDS(on)  
VGS = 5V, ID = 0.5 • ID25, Note 1  
VGS = 10V, ID = 0.5 • ID25, Note 1  
64  
62  
77  
75  
DS100857A(9/17)  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXTS01N90P-89  
IXTS01N90P-223  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
gfs  
VDS = 50V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
70  
120  
mS  
Ciss  
Coss  
Crss  
82.0  
5.7  
pF  
pF  
pF  
1.4  
td(on)  
tr  
td(off)  
tf  
5
20  
30  
65  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 50V, ID = 0.5 • ID25  
RG = 50(External)  
Qg(on)  
Qgs  
2.2  
0.4  
0.7  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
RthJC  
5.0 C/W  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
IS  
VGS = 0V  
100 mA  
ISM  
VSD  
Repetitive, pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
400 mA  
1.4  
V
trr  
QRM  
IRM  
285  
860  
6
ns  
IF = 1A, -di/dt = 100A/μs  
nC  
VR = 100V  
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXTS01N90P-89  
IXTS01N90P-223  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
Fig. 1. Output Characteristics @ TJ = 25oC  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
550  
500  
450  
400  
350  
300  
250  
200  
150  
100  
50  
V
= 10V  
5V  
GS  
V
= 10V  
6V  
GS  
4V  
3V  
5V  
4V  
3V  
2V  
0
0
0
0
1
2
3
4
5
6
7
0
10  
20  
30  
40  
50  
60  
70  
80  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 50mA Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125oC  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
V
= 10V  
5V  
GS  
V
= 10V  
GS  
I
= 100mA  
D
4V  
I
= 50mA  
D
3V  
2V  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
2
4
6
8
10  
12  
14  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 50mA Value vs.  
Drain Current  
Fig. 6. Normalized Breakdown & Threshold Voltages  
vs. Junction Temperature  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
V
= 10V  
GS  
BV  
DSS  
T
J
= 125oC  
V
GS(th)  
T
= 25oC  
J
100  
200  
300  
400  
500  
600  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
160  
TJ - Degrees Centigrade  
ID - MilliAmperes  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXTS01N90P-89  
IXTS01N90P-223  
Fig. 7. Maximum Drain Current vs. Case Temperature  
Fig. 8. Input Admittance  
160  
140  
120  
100  
80  
100  
80  
60  
40  
20  
0
V
= 50V  
DS  
T
J
= 125oC  
25oC  
60  
- 40oC  
40  
20  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
0.85  
40  
TC - Degrees Centigrade  
VGS - Volts  
Fig. 10. Forward Voltage Drop of Intrinsic Diode  
Fig. 9. Transconductance  
300  
250  
200  
150  
100  
50  
250  
200  
150  
100  
50  
T
= - 40oC  
25oC  
J
V
= 50V  
DS  
125oC  
T
= 125oC  
J
T
J
= 25oC  
0
0
0
20  
40  
60  
80  
100  
120  
140  
160  
0.4  
0.45  
0.5  
0.55  
0.6  
0.65  
0.7  
0.75  
0.8  
ID - MilliAmperes  
VSD - Volts  
Fig. 11. Gate Charge  
Fig. 12. Capacitance  
10  
9
8
7
6
5
4
3
2
1
0
1,000  
V
= 450V  
= 1 MHz  
f
DS  
I
I
= 50mA  
= 1mA  
D
G
C
iss  
100  
10  
1
C
oss  
C
rss  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
1.8  
2
2.2  
0
5
10  
15  
20  
25  
30  
35  
VDS - Volts  
QG - NanoCoulombs  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTS01N90P-89  
IXTS01N90P-223  
Fig. 13. Forward-Bias Safe Operating Area  
Fig. 14. Maximum Transient Thermal Impedance  
1000  
100  
10  
10  
R
Limit  
)
DS(  
on  
100μs  
1
1ms  
0.1  
10ms  
T = 150oC  
= 25oC  
J
DC  
T
C
Single Pulse  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1,000  
VDS - Volts  
Pulse Width - Second  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_01N90P(F1-G40) 9-19-17  
IXTS01N90P-89  
IXTS01N90P-223  
SOT-89 Outline  
SOT-223 Outline  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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