IXSX 35N120BD1
IXSX 35N120BD1
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 HOLE-LESSOutline
IC = IC90; VCE = 10 V,
16
23
S
Pulse test, t £ 300 ms, duty cycle £ 2 %
Cies
Coes
Cres
3600
315
75
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
120
33
nC
nC
nC
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
49
td(on)
36
27
ns
ns
Inductive load, TJ = 25°C
tri
td(off)
tfi
IC = IC90, VGE = 15 V,
VCE = 0.8 VCES, RG = 5.0 W
Switching times may increase for VCE
(Clamp) > 0.8 VCES, higher TJ or
increased RG
160
180
5
300 ns
300 ns
Eoff
9
mJ
td(on)
tri
38
29
6
ns
ns
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V,
Eon
td(off)
tfi
mJ
ns
VCE = 0.8 VCES, RG = 5.0 W
Switching times may increase for VCE
(Clamp) > 0.8 VCES, higher TJ or
increased RG
240
340
9
ns
Eoff
mJ
TO-264 AA Outline
RthJC
RthCK
0.42 K/W
K/W
0.15
ReverseDiode(FRED)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
VF
TestConditions
IF = 130A, VGE = 0 V, Pulse test,
£ 300 ms, duty cycle d £ 2 %, TJ = 125°C
2.75
1.85
V
V
t
IRM
trr
IF = 130A, VGE = 0 V, -di /dt = 100 A/ms TJ =100°C
VR = 100 V
7
14.3
A
F
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V
40
ns
0.65 K/W
RthJC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
