IXTH 30N25
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD Outline
VDS = 10 V; ID = 15 A, pulse test
24
32
S
Ciss
Coss
Crss
3950
510
pF
pF
pF
1
2
3
VGS = 0 V, VDS = 25 V, f = 1 MHz
177
td(on)
tr
td(off)
tf
19
19
79
17
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 30A
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
RG = 3.6 Ω (External)
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
Qg(on)
Qgs
136
32
nC
nC
nC
A
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
A
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25
1
A
2
Qgd
52
b
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
b
1
b
RthJC
RthCK
0.65 K/W
K/W
2
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
0.25
20.80 21.46
15.75 16.26
e
5.20
19.81 20.32
4.50
5.72 0.205 0.225
.780 .800
.177
L
L1
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
P
3.55
5.89
3.65 .140 .144
6.40 0.232 0.252
Q
Symbol
TestConditions
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
IS
VGS = 0 V
30
120
1.5
A
A
V
ISM
VSD
Repetitive; pulse width limited by TJM
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
IF = IS, -di/dt = 100 A/µs, VR = 100 V
300
3.0
ns
Qrr
µC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
