IXTN40P50P
Symbol
Test Conditions
Characteristic Values
SOT-227B (IXTN) Outline
(TJ = 25C, Unless Otherwise specified)
Min.
Typ.
Max.
gfs
VDS = -10V, ID = 0.5 • ID25, Note 1
VGS = 0V, VDS = - 25V, f = 1MHz
23
38
S
Ciss
Coss
Crss
11.5
1150
93
nF
pF
pF
td(on)
tr
td(off)
tf
37
59
90
34
ns
ns
ns
ns
Resistive Switching Times
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1 (External)
Qg(on)
Qgs
205
55
nC
nC
nC
(M4 screws (4x) supplied)
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
75
RthJC
RthCS
0.14C/W
C/W
0.05
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min. Typ.
Max.
IS
VGS = 0V
- 40
A
A
V
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = - 20A, VGS = 0V, Note 1
-160
- 3.0
trr
477
14.5
- 61
ns
C
A
IF = - 20A, -di/dt = -150A/s
QRM
IRM
VR = -100V, VGS = 0V
Note
1: Pulse test, t 300s, duty cycle, d 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
