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IXTX120N65X2

型号：

IXTX120N65X2

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

6 页

PDF大小：

202 K

下载PDF手册
Preliminary Technical Information  
X2-Class  
Power MOSFET  
VDSS = 650V  
ID25 = 120A  
RDS(on) 23m  
IXTK120N65X2  
IXTX120N65X2  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-264P (IXTK)  
Symbol  
Test Conditions  
Maximum Ratings  
G
VDSS  
VDGR  
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
650  
650  
V
V
D
Tab  
S
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
PLUS247 (IXTX)  
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
120  
240  
A
A
IA  
EAS  
TC = 25C  
TC = 25C  
15  
3.5  
A
J
G
D
Tab  
S
PD  
TC = 25C  
1250  
50  
W
G = Gate  
D
= Drain  
dv/dt  
IS IDM, VDD VDSS, TJ 150°C  
V/ns  
S = Source  
Tab = Drain  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
C  
C  
C  
Features  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
International Standard Packages  
Low QG  
Avalanche Rated  
Md  
FC  
Mounting Torque (TO-264P)  
Mounting Force (PLUS247)  
1.13/10  
Nm/lb.in  
N/lb  
20..120 /4.5..27  
Low Package Inductance  
Weight  
TO-264P  
PLUS247  
10  
6
g
g
Advantages  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 1mA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
650  
V
V
Applications  
3.0  
5.0  
Switch-Mode and Resonant-Mode  
200 nA  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
Robotics and Servo Controls  
IDSS  
25 A  
500 A  
TJ = 125C  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
23 m  
© 2016 IXYS CORPORATION, All Rights Reserved  
DS100677B(03/16)  
IXTK120N65X2  
IXTX120N65X2  
Symbol  
Test Conditions  
Characteristic Values  
TO-264P Outline  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
E1  
A
E
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
Gate Input Resistance  
66  
110  
S
Q
RGi  
0.77  
R
Q1  
D1  
D
Ciss  
Coss  
Crss  
13.6  
9500  
8.9  
nF  
pF  
pF  
R1  
4
1
VGS = 0V, VDS = 25V, f = 1MHz  
2
3
L1  
D2  
Effective Output Capacitance  
Co(er)  
Co(tr)  
425  
pF  
pF  
c
Energy related  
Time related  
VGS = 0V  
VDS = 0.8 • VDSS  
b1  
1960  
b
A
b2  
e
x2  
1
= Gate  
2,4 = Drain  
td(on)  
tr  
td(off)  
tf  
32  
24  
87  
10  
ns  
ns  
ns  
ns  
3
= Source  
Resistive Switching Times  
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
V
RG = 1(External)  
Qg(on)  
Qgs  
230  
74  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
65  
RthJC  
RthCS  
0.10C/W  
0.15C/W  
PLUS247TM Outline  
A
E
E1  
Q
A2  
Source-Drain Diode  
D2  
R
D
D1  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
120  
480  
1.4  
4
1
2
3
L1  
IS  
VGS = 0V  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS , VGS = 0V, Note 1  
e
b
A1  
trr  
505  
15  
ns  
μC  
A
3 PLCS  
b2 2 PLCS  
2 PLCS  
C
IF = 60A, -di/dt = 100A/s  
b4  
QRM  
IRM  
Terminals: 1 - Gate  
VR = 100V, VGS = 0V  
2,4 - Drain  
3 - Source  
58  
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTK120N65X2  
IXTX120N65X2  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
120  
100  
80  
60  
40  
20  
0
280  
240  
200  
160  
120  
80  
V
= 10V  
8V  
GS  
V
= 10V  
GS  
8V  
7V  
7V  
6V  
6V  
5V  
40  
5V  
0
0
0.5  
1
1.5  
2
2.5  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 60A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
120  
100  
80  
60  
40  
20  
0
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
V
= 10V  
7V  
GS  
V
= 10V  
GS  
6V  
I
= 120A  
D
I
= 60A  
D
5V  
4V  
0
1
2
3
4
5
6
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 60A Value vs.  
Drain Current  
Fig. 6. Normalized Breakdown & Threshold Voltages  
vs. Junction Temperature  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
V
= 10V  
GS  
BV  
DSS  
T
J
= 125ºC  
V
GS(th)  
T
J
= 25ºC  
0
40  
80  
120  
160  
200  
240  
280  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
160  
ID - Amperes  
TJ - Degrees Centigrade  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXTK120N65X2  
IXTX120N65X2  
Fig. 7. Maximum Drain Current vs. Case Temperature  
Fig. 8. Input Admittance  
140  
120  
100  
80  
180  
160  
140  
120  
100  
80  
T
J
= 125ºC  
25ºC  
- 40ºC  
60  
60  
40  
40  
20  
20  
0
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
TC - Degrees Centigrade  
VGS - Volts  
Fig. 10. Forward Voltage Drop of Intrinsic Diode  
Fig. 9. Transconductance  
300  
250  
200  
150  
100  
50  
200  
180  
160  
140  
120  
100  
80  
T
J
= - 40ºC  
25ºC  
125ºC  
60  
T
J
= 125ºC  
40  
T
J
= 25ºC  
20  
0
0
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
1.2  
1.3  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
VSD - Volts  
I D - Amperes  
Fig. 11. Gate Charge  
Fig. 12. Capacitance  
10  
8
100,000  
10,000  
1,000  
100  
V
= 325V  
DS  
I
I
= 60A  
D
G
C
= 10mA  
iss  
6
C
oss  
4
10  
2
C
= 1 MHz  
rss  
f
1
0
1
10  
100  
1000  
0
40  
80  
120  
160  
200  
240  
VDS - Volts  
QG - NanoCoulombs  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTK120N65X2  
IXTX120N65X2  
Fig. 13. Output Capacitance Stored Energy  
Fig. 14. Forward-Bias Safe Operating Area  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
1000  
100  
10  
R
Limit  
)
DS(  
on  
25µs  
100µs  
1ms  
1
T
J
= 150ºC  
= 25ºC  
T
C
10ms  
Single Pulse  
0.1  
50060010
0
100  
200  
300  
400  
100  
1,000  
VDS - Volts  
VDS - Volts  
Fig. 15. Maximum Transient Thermal Impedance  
aaaaa  
0.3  
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_120N65X2(X9-S602) 1-06-16  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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