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IXTH52N65X

型号：

IXTH52N65X

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

6 页

PDF大小：

208 K

下载PDF手册
X-Class  
Power MOSFET  
VDSS = 650V  
ID25 = 52A  
RDS(on) 68m  
IXTH52N65X  
N-Channel Enhancement Mode  
TO-247 (IXTH)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
650  
650  
V
V
VDGR  
TJ = 25C to 150C, RGS = 1M  
G
D
Tab  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
S
G = Gate  
S = Source  
D
= Drain  
ID25  
IDM  
TC = 25C  
52  
A
A
Tab = Drain  
TC = 25C, Pulse Width Limited by TJM  
104  
PD  
TC = 25C  
660  
W
TJ  
-55 ... +150  
150  
C  
C  
C  
TJM  
Tstg  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Features  
International Standard Package  
Low RDS(ON) and QG  
Low Package Inductance  
Md  
Mounting Torque  
1.13/10  
6
Nm/lb.in  
g
Weight  
Advantages  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
Applications  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
650  
V
V
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
Robotics and Servo Controls  
3.0  
5.0  
100 nA  
IDSS  
10 A  
TJ = 125C  
100 A  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
68 m  
DS100604D(6/15)  
© 2015 IXYS CORPORATION, All Rights Reserved  
IXTH52N65X  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 Outline  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
D
A
A2  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
Gate Input Resistance  
25  
42  
S
A
B
E
RGi  
1.1  
Q
S
D2  
P1  
R
D1  
Ciss  
Coss  
Crss  
4350  
3300  
120  
pF  
pF  
pF  
D
4
VGS = 0V, VDS = 25V, f = 1MHz  
1
2
3
L1  
C
E1  
L
Effective Output Capacitance  
Co(er)  
Co(tr)  
204  
673  
pF  
pF  
Energy related  
Time related  
VGS = 0V  
VDS = 0.8 • VDSS  
A1  
b
b2  
C
1 - Gate  
2,4 - Drain  
3 - Source  
b4  
e
td(on)  
tr  
td(off)  
tf  
26  
57  
63  
16  
ns  
ns  
ns  
ns  
Resistive Switching Times  
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
V
RG = 2(External)  
Qg(on)  
Qgs  
113  
25  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
57  
RthJC  
RthCS  
0.19 C/W  
C/W  
0.21  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
IS  
VGS = 0V, Note1  
52  
A
A
ISM  
VSD  
Repetitive, pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
208  
1.4  
V
trr  
QRM  
IRM  
435  
9.8  
46  
ns  
IF = 26A, -di/dt = 100A/μs  
C  
VR = 100V  
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXTH52N65X  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
140  
120  
100  
80  
V
= 10V  
8V  
GS  
V
= 10V  
9V  
GS  
50  
40  
30  
20  
10  
0
7V  
8V  
7V  
60  
40  
6V  
5V  
20  
6V  
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 26A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
V
= 10V  
8V  
GS  
50  
40  
30  
20  
10  
0
V
= 10V  
GS  
7V  
I
= 52A  
D
I
= 26A  
D
6V  
5V  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
1
2
3
4
5
6
7
8
9
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 26A Value vs.  
Drain Current  
Fig. 6. Normalized Breakdown & Threshold Voltages  
vs. Junction Temperature  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
V
= 10V  
GS  
T = 125ºC  
J
BV  
DSS  
T = 25ºC  
J
V
GS(th)  
100  
-60  
-40  
-20  
0
20  
40  
60  
80  
120  
140  
160  
0
20  
40  
60  
80  
100  
120  
140  
TJ - Degrees Centigrade  
ID - Amperes  
© 2015 IXYS CORPORATION, All Rights Reserved  
IXTH52N65X  
Fig. 7. Maximum Drain Current vs.  
Case Temperature  
Fig. 8. Input Admittance  
80  
70  
60  
50  
40  
30  
20  
10  
0
60  
50  
40  
30  
20  
10  
0
T
J
= 125ºC  
25ºC  
- 40ºC  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TC - Degrees Centigrade  
VGS - Volts  
Fig. 10. Forward Voltage Drop of Intrinsic Diode  
Fig. 9. Transconductance  
80  
70  
60  
50  
40  
30  
20  
10  
0
160  
140  
120  
100  
80  
T
J
= - 40ºC  
25ºC  
125ºC  
60  
T
J
= 125ºC  
40  
T
J
= 25ºC  
20  
0
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
ID - Amperes  
VSD - Volts  
Fig. 12. Capacitance  
Fig. 11. Gate Charge  
100,000  
10,000  
1,000  
100  
10  
9
8
7
6
5
4
3
2
1
0
V
= 325V  
DS  
I
I
= 26A  
D
G
C
iss  
= 10mA  
C
C
oss  
rss  
10  
= 1 MHz  
f
1
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100 110 120  
1
10  
100  
1000  
VDS - Volts  
QG - NanoCoulombs  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTH52N65X  
Fig. 13. Output Capacitance Stored Energy  
Fig. 14. Forward-Bias Safe Operating Area  
1000  
100  
10  
45  
40  
35  
30  
25  
20  
15  
10  
5
R
Limit  
)
DS(  
on  
25µs  
100µs  
1ms  
1
T
= 150ºC  
= 25ºC  
J
10ms  
T
C
100ms  
Single Pulse  
DC  
0
0.1  
0
100  
200  
300  
400  
500  
600  
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
Fig. 15. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2015 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_52N65X(I8-R4T4) 6-17-15-A  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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