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IXTH270N04T4

型号：

IXTH270N04T4

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

250 K

下载PDF手册
Preliminary Technical Information  
TrenchT4TM  
Power MOSFET  
VDSS = 40V  
ID25 = 270A  
RDS(on) 2.4m  
IXTP270N04T4  
IXTH270N04T4  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-220AB (IXTP)  
G
D
D (Tab)  
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TO-247 (IXTH)  
TJ = 25C to 175C  
TJ = 25C to 175C, RGS = 1M  
40  
40  
V
V
VDGR  
VGSM  
Transient  
15  
V
G
D
S
ID25  
ILRMS  
IDM  
TC = 25C  
Lead Current Limit, RMS  
TC = 25C, Pulse Width Limited by TJM  
270  
160  
800  
A
A
A
D (Tab)  
G = Gate  
D
= Drain  
S = Source  
Tab = Drain  
IA  
TC = 25C  
TC = 25C  
135  
750  
A
EAS  
mJ  
IA  
TC = 25C  
TC = 25C  
TC = 25C  
270  
350  
375  
A
mJ  
W
EAS  
PD  
Features  
TJ  
-55 ... +175  
175  
C  
C  
C  
International Standard Packages  
175°C Operating Temperature  
High Current Handling Capability  
Avalanche Rated  
TJM  
Tstg  
-55 ... +175  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Low RDS(on)  
Md  
Mounting Torque  
1.13 / 10  
Nm/lb.in  
Advantages  
Weight  
TO-220  
TO-247  
3
6
g
g
Easy to Mount  
Space Savings  
High Power Density  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min. Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250A  
VDS = VGS, ID = 250A  
VGS = 15V, VDS = 0V  
VDS = VDSS, VGS = 0V  
40  
V
V
• Synchronous Buck Converters  
• High Current Switching Power  
Supplies  
2.0  
4.0  
            200 nA  
A  
IDSS  
5
• Battery Powered Electric Motors  
• Resonant-Mode Power Supplies  
• Electronics Ballast Application  
• Class D Audio Amplifiers  
TJ = 150C  
750  A  
2.4 m  
RDS(on)  
VGS = 10V, ID = 50A, Note 1  
© 2016 IXYS CORPORATION, All Rights Reserved  
DS100671B(03/16)  
IXTP270N04T4  
IXTH270N04T4  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
(TJ = 25C, Unless Otherwise Specified)  
gfs  
VDS = 10V, ID = 60A, Note 1  
Gate Input Resistance  
90  
150  
1.4  
S
RGi  
Ciss  
Coss  
Crss  
9140  
1450  
980  
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
td(on)  
tr  
td(off)  
tf  
18  
28  
72  
23  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 135A  
RG = 2(External)  
Qg(on)  
Qgs  
182  
45  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
67  
RthJC  
RthCS  
0.40 C/W  
C/W  
TO-220  
TO-247  
0.50  
0.21  
C/W  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min. Typ.  
Max.  
IS  
VGS = 0V  
270  
A
A
V
ISM  
VSD  
Repetitive, Pulse width limited by TJM  
IF = 100A, VGS = 0V, Note 1  
1080  
1.4  
trr  
48  
1.8  
43  
ns  
A
IF = 150A, VGS = 0V  
IRM  
QRM  
-di/dt = 100A/s  
VR = 30V  
nC  
Notes: 1. Pulse test, t 300s, duty cycle, d  2%.  
2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm  
or less from the package body.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTP270N04T4  
IXTH270N04T4  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
350  
300  
250  
200  
150  
100  
50  
350  
300  
250  
200  
150  
100  
50  
V
= 15V  
10V  
V
= 10V  
GS  
GS  
8V  
9V  
8V  
7V  
7V  
6V  
6V  
0
0
0
1
2
3
4
5
6
7
8
9
10  
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
VDS - Volts  
VDS - Volts  
Fig. 4. Normalized RDS(on) to ID = 135A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150ºC  
300  
250  
200  
150  
100  
50  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 15V  
GS  
V
= 10V  
GS  
10V  
9V  
8V  
7V  
I
D
= 270A  
I
D
= 135A  
6V  
5V  
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. Normalized RDS(on) to ID = 135A  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
180  
160  
140  
120  
100  
80  
V
= 10V  
GS  
15V  
External Lead Current Limit  
T = 175ºC  
J
60  
T = 25ºC  
J
40  
20  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0
50  
100  
150  
200  
250  
300  
350  
ID - Amperes  
TC - Degrees Centigrade  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXTP270N04T4  
IXTH270N04T4  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
240  
200  
160  
120  
80  
500  
450  
400  
350  
300  
250  
200  
150  
100  
50  
V
= 10V  
V
= 10V  
DS  
T
J
= - 40ºC  
DS  
25ºC  
150ºC  
T
J
= 150ºC  
25ºC  
- 40ºC  
40  
0
0
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
0
20  
40  
60  
80  
100 120 140 160 180 200 220 240  
ID - Amperes  
VGS - Volts  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
300  
250  
200  
150  
100  
50  
10  
9
8
7
6
5
4
3
2
1
0
V
= 20V  
DS  
I
I
= 135A  
D
G
= 10mA  
T
J
= 150ºC  
T
J
= 25ºC  
0
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1.3  
1.4  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
QG - NanoCoulombs  
VSD - Volts  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
1,000  
100  
10  
100,000  
10,000  
1,000  
100  
25µs  
= 1 MHz  
f
R
Limit  
DS(on)  
100µs  
C
iss  
External Lead  
Current Limit  
C
C
oss  
rss  
T
= 175ºC  
= 25ºC  
J
T
1ms  
C
10ms  
Single Pulse  
DC  
1
0
1
10  
100  
0
5
10  
15  
20  
25  
30  
35  
40  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTP270N04T4  
IXTH270N04T4  
Fig. 13. Resistive Turn-on Rise Time  
vs. Junction Temperature  
Fig. 14. Resistive Turn-on Rise Time  
vs. Drain Current  
34  
33  
32  
31  
30  
29  
28  
27  
26  
33  
32  
31  
30  
29  
28  
27  
26  
R
= 2Ω , V = 10V  
GS  
R
= 2Ω , V = 10V  
G
G
GS  
V
= 20V  
V
= 20V  
DS  
DS  
T
J
= 150ºC  
I
I
= 270A  
D
= 135A  
D
T
J
= 25ºC  
25  
50  
75  
100  
125  
150  
120  
140  
160  
180  
200  
220  
240  
260  
280  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on Switching Times  
vs. Gate Resistance  
Fig. 16. Resistive Turn-off Switching Times  
vs. Junction Temperature  
300  
250  
200  
150  
100  
50  
70  
34  
85  
t r  
td(on)  
t f  
td(off)  
32  
30  
28  
26  
24  
22  
20  
80  
75  
70  
65  
60  
55  
50  
60  
50  
40  
30  
20  
10  
TJ = 150ºC, V = 10V  
R = 2Ω, V = 10V  
G GS  
GS  
V
= 20V  
V
= 20V  
DS  
DS  
I
= 270A, 135A  
D
I
= 135A, 270A  
D
0
25  
50  
75  
100  
125  
150  
1
3
5
7
9
11  
13  
15  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 17. Resistive Turn-off Switching Times  
vs. Drain Current  
Fig. 18. Resistive Turn-off Switching Times  
vs. Gate Resistance  
34  
32  
30  
28  
26  
24  
22  
20  
85  
80  
75  
70  
65  
60  
55  
50  
200  
160  
120  
80  
300  
240  
180  
120  
60  
t f  
td(off)  
t f  
td(off)  
R
G
= 2ꢀ, VGS = 10V  
T = 150ºC, V = 10V  
J GS  
V
DS = 20V  
V
= 20V  
DS  
I
= 135A  
D
T
J
= 150ºC  
I
= 270A  
D
T
J
= 25ºC  
40  
0
0
1
3
5
7
9
11  
13  
15  
120  
140  
160  
180  
200  
220  
240  
260  
280  
ID - Amperes  
RG - Ohms  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXTP270N04T4  
IXTH270N04T4  
Fig. 19. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
TO-220 (IXTH) Outline  
TO-220 (IXTP) Outline  
E
A
R
A2  
0P  
U
E2/2  
E
A
A1  
Q
0P  
H1  
S
Q
E2  
L1  
D
(D2)  
(E1)  
T
D
4
D1  
1
2
3
4
1
2
3
A2  
EJECTOR  
PIN  
L
L1  
L
b2  
b
c
b4  
c
3X  
b
e
A1  
e
e1  
3X b2  
1 = Gate  
2,4 = Drain  
3 = Source  
1 = Gate  
W
BOTTOM FLATNESS  
2,4 = Drain  
3 = Source  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: T_270N04T4(T5-M03) 1-28-16  
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