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IXTX46N50L

型号：

IXTX46N50L

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

6 页

PDF大小：

158 K

下载PDF手册
Preliminary Technical Information  
IXTK46N50L  
IXTX46N50L  
VDSS = 500 V  
ID25 = 46 A  
Linear Power MOSFET  
With Extended FBSOA  
N-Channel Enhancement Mode  
RDS(on) ≤ 0.16  
Ω
TO-264 (IXTK)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MΩ  
500  
500  
V
V
VDGR  
G
D
S
VGS  
Continuous  
Transient  
30  
40  
V
V
(TAB)  
VGSM  
ID25  
IDM  
IAR  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
46  
100  
46  
A
A
A
PLUS247 (IXTX)  
EAR  
EAS  
TC = 25°C  
60  
mJ  
J
1.5  
PD  
TC = 25°C  
700  
W
TAB  
TJ  
-55 to +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
-55 to +150  
TL  
1.6 mm (0.063 in) from case for 10 s  
Plastic body for 10 s  
300  
260  
°C  
°C  
TSOLD  
Features  
Md  
Fc  
Mounting torque  
Mounting force  
(TO-264)  
1.13/10 Nm/lb.in.  
(PLUS247TM)  
20...120/4.5...27  
N/lb.  
z Designed for linear operation  
z International standard package  
z Unclamped Inductive switching (UIS)  
Weight  
Symbol  
PLUS247  
TO-264  
6
10  
g
g
rated  
z Molding epoxies meet UL 94 V-0  
flammability classification  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Applications  
Min.  
Typ.  
Max.  
z Programmable loads  
z Current regulators  
z DC-DC converters  
z Battery chargers  
z DC choppers  
z Temperature and lighting controls  
BVDSS  
VGS(th)  
VGS = 0 V, ID = 1 mA  
500  
3
V
V
VDS = VGS, ID = 250 μA  
6
IGSS  
IDSS  
VGS = 30 V, VDS = 0 V  
200  
nA  
VDS = VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
50  
1
μA  
mA  
RDS(on)  
VGS = 20 V, ID = 0.5 ID25, Note 1  
0.16  
Ω
Advantages  
z
Easy to mount  
z
Space savings  
z
High power density  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2007 IXYS CORPORATION, All rights reserved  
DS99350A(03/07)  
IXTK46N50L  
IXTX46N50L  
Symbol  
gfs  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
TO-264 (IXTK) Outline  
VDS = 10 V; ID = 0.5 • ID25, Note 1  
7
10  
13  
S
Ciss  
Coss  
Crss  
7000  
900  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
170  
td(on)  
tr  
td(off)  
tf  
40  
50  
80  
42  
ns  
ns  
ns  
ns  
VGS = 15 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 2 Ω (External),  
Qg(on)  
Qgs  
260  
85  
nC  
nC  
nC  
VGS = 15 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
125  
RthJC  
RthCS  
0.18 °C/W  
°C/W  
0.15  
Safe Operating Area Specification  
Symbol  
SOA  
Test Conditions  
Min. Typ. Max.  
VDS = 400 V, ID = 0.6 A, TC = 90°C  
240  
W
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
PLUS247TM (IXTX) Outline  
Symbol  
Test Conditions  
IS  
VGS = 0 V  
46  
100  
1.5  
A
A
ISM  
VSD  
trr  
Repetitive; pulse width limited by TJM  
IF = IS, VGS = 0 V, Note 1  
IF = IS, -di/dt = 100 A/μs, VR = 100V  
V
600  
ns  
Note 1: Pulse test, t < 300 μs, duty cycle, d ≤ 2 %  
Terminals: 1 - Gate  
2 - Drain (Collector)  
3 - Source (Emitter)  
4 - Drain (Collector)  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
PRELIMINARY TECHNICAL INFORMATION  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
The product presented herein is under development. The Technical Specifications offered are  
derived from data gathered during objective characterizations of preliminary engineering lots; but  
also may yet contain some information supplied during a pre-production design evaluation. IXYS  
reserves the right to change limits, test conditions, and dimensions without notice.  
e
L
L1  
5.45 BSC  
19.81 20.32  
3.81  
.215 BSC  
.780 .800  
.150 .170  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTK46N50L  
IXTX46N50L  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGS = 20V  
18V  
VGS = 20V  
18V  
16V  
14 V  
16V  
14V  
12V  
12 V  
10 V  
10V  
9V  
9V  
8V  
7V  
8V  
0
0
1
2
3
4
5
6
7
8
9
0
3
6
9
12 15 18 21 24 27 30  
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
@ 125ºC  
Fig. 4. RDS(on) Normalized to 0.5 ID25 Value  
vs. Junction Temperature  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
3.1  
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
1.0  
0.7  
0.4  
VGS = 20V  
18V  
VGS = 20V  
16V  
14V  
12 V  
ID = 46A  
ID = 23A  
10V  
9V  
8V  
7V  
0
0
2
4
6
8
10  
12  
14  
16  
18  
-50  
-25  
0
25  
50  
75  
100 125 150  
VD S - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Norm alize d to  
0.5 ID25 Value vs. ID  
Fig. 6. Drain Current vs. Case  
Temperature  
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
VGS = 20V  
TJ = 125ºC  
TJ = 25ºC  
0
0
20  
40  
60  
80  
100  
120  
-50  
-25  
0
25  
50  
75  
100 125 150  
I D - Amperes  
TC - Degrees Centigrade  
© 2007 IXYS CORPORATION, All rights reserved  
IXTK46N50L  
IXTX46N50L  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
70  
60  
50  
40  
30  
20  
10  
0
20  
18  
16  
14  
12  
10  
8
TJ = -40ºC  
25ºC  
125ºC  
TJ = 125ºC  
25ºC  
-40ºC  
6
4
2
0
5
0.5  
0
6
7
8
9
10  
11 12  
13 14  
15  
0
10  
20  
30  
40  
50  
60  
70  
VG S - Volts  
I D - Amperes  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
16  
14  
12  
10  
8
70  
60  
50  
40  
30  
20  
10  
0
VDS = 250V  
ID = 23A  
I
G = 10mA  
TJ = 125ºC  
6
TJ = 25ºC  
4
2
0
0.6  
0.7  
VS D - Volts  
0.8  
0.9  
1
0
30  
60  
90 120 150 180 210 240 270  
Q G - nanoCoulombs  
Fig. 11. Capacitance  
10000  
1000  
100  
C
C
iss  
oss  
C
rss  
f = 1MHz  
5
10  
15  
20  
VD S - Volts  
25  
30  
35  
40  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTK46N50L  
IXTX46N50L  
Fig. 12. Forward-Bias Safe  
Operating Area @ TC = 25ºC  
Fig. 13. Forward-Bias Safe  
Operating Area @ TC = 90ºC  
1000  
100  
10  
1000  
100  
10  
TJ = 150ºC  
TJ = 150ºC  
RDS(on) Limit  
RDS(on) Limit  
25µs  
25µs  
100µs  
100µs  
1ms  
1ms  
10ms  
10ms  
DC  
1
1
DC  
0.1  
0.1  
10  
100  
1000  
10  
100  
1000  
VD S - Volts  
VD S - Volts  
Fig. 14. Maximum Transient Thermal Impedance  
1.000  
0.100  
0.010  
0.001  
0.1  
1
10  
100  
1000  
Pulse Width - milliseconds  
IXYS REF: T_46N50L (8N) 4-05-07-A.xls  
© 2007 IXYS CORPORATION, All rights reserved  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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