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IXTA110N055T2-TRL

型号：

IXTA110N055T2-TRL

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

256 K

下载PDF手册
TrenchT2TM  
Power MOSFET  
VDSS = 55V  
ID25 = 110A  
RDS(on) 6.6m  
IXTA110N055T2  
IXTP110N055T2  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263 (IXTA)  
G
S
D (Tab)  
TO-220 (IXTP)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 175C  
55  
55  
V
V
VDGR  
TJ = 25C to 175C, RGS = 1M  
VGSM  
Transient  
20  
V
G
D
S
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
110  
300  
A
A
D (Tab)  
G = Gate  
S = Source Tab = Drain  
D
= Drain  
IA  
TC = 25C  
TC = 25C  
50  
A
EAS  
400  
mJ  
PD  
TC = 25C  
180  
W
Features  
TJ  
-55 ... +175  
175  
C  
C  
C  
TJM  
Tstg  
International Standard Packages  
Avalanche Rated  
Low Package Inductance  
-55 ... +175  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Fast Intrinsic Rectifier  
175°C Operating Temperature  
High Current Handling Capability  
ROHS Compliant  
High Performance Trench  
FC  
Mounting Force (TO-263)  
Mounting Torque (TO-220)  
10..65 / 2.2..14.6  
1.13 / 10  
N/lb  
Nm/lb.in  
Md  
Weight  
TO-263  
TO-220  
2.5  
3.0  
g
g
Technology for extremely low RDS(on)  
Advantages  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min. Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250A  
VDS = VGS, ID = 250A  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
55  
V
V
Applications  
2.0  
4.0  
Automotive Engine Control  
Synchronous Buck Converter  
           200 nA  
A  
(for Notebook SystemPower &  
IDSS  
2
General Purpose Point & Load)  
DC/DC Converters  
High Current Switching Applications  
TJ = 150C  
VGS = 10V, ID = 25A, Notes 1 & 2  
200 A  
6.6 m  
RDS(on)  
5.5  
Power Train Management  
Distributed Power Architecture  
  
DS99955B(7/18)  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXTA110N055T2  
IXTP110N055T2  
Symbol  
Test Conditions  
Characteristic Values  
TO-263 Outline  
A
(TJ = 25C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
E
E1  
C2  
L1  
L2  
gfs  
VDS = 10V, ID = 55A, Note 1  
30  
49  
S
D1  
D
4
H
A1  
Ciss  
Coss  
Crss  
3060  
497  
pF  
pF  
pF  
1
3
2
VGS = 0V, VDS = 25V, f = 1MHz  
b
b2  
L3  
c
e
e
0.43 [11.0]  
105  
0  
0.34 [8.7]  
td(on)  
tr  
td(off)  
tf  
18  
25  
40  
23  
ns  
ns  
ns  
ns  
Resistive Switching Times  
0.66 [16.6]  
A2  
V
GS = 10V, VDS = 30V, ID = 25A  
1 - Gate  
2,4 - Drain  
3 - Source  
0.20 [5.0]  
0.10 [2.5]  
60.12 [3.0]  
0.06 [1.6]  
RG = 5(External)  
Qg(on)  
Qgs  
57  
16  
11  
nC  
nC  
nC  
VGS= 10V, VDS = 0.5 • VDSS, ID = 25A  
Qgd  
RthJC  
RthCS  
0.82 C/W  
C/W  
TO-220  
0.50  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
110  
A
A
V
TO-220 Outline  
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = 25A, VGS = 0V, Note 1  
300  
A
E
oP  
A1  
0.84  
1.00  
H1  
Q
trr  
38  
2.4  
46  
ns  
A
D2  
E1  
D
IF = 50A, VGS = 0V,  
IRM  
QRM  
D1  
-di/dt = 100A/s, VR = 27V  
nC  
A2  
EJECTOR  
PIN  
L1  
L
3X b  
3X b2  
ee  
c
e1  
Notes: 1. Pulse test, t 300s; duty cycle, d  2%.  
1 - Gate  
2,4 - Drain  
3 - Source  
2. On through-hole packages, RDS(on) Kelvin test contact  
location must be 5mm or less from the package body.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXTA110N055T2  
IXTP110N055T2  
Fig. 1. Output Characteristics @ TJ = 25oC  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
350  
300  
250  
200  
150  
100  
50  
V
= 15V  
V
= 15V  
GS  
GS  
10V  
100  
80  
60  
40  
20  
0
10V  
9V  
8V  
9V  
7V  
6V  
8V  
7V  
6V  
5V  
5V  
0
0
1
2
3
4
5
6
7
8
9
10  
0
0.0  
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 55A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150oC  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 15V  
GS  
100  
80  
60  
40  
20  
0
10V  
9V  
8V  
V
= 10V  
GS  
I
= 110A  
D
7V  
6V  
I
= 55A  
D
5V  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 55A Value vs.  
Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
120  
100  
80  
60  
40  
20  
0
V
= 10V  
GS  
15V  
T
= 175oC  
J
T
= 25oC  
300  
J
50  
100  
150  
200  
250  
350  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
ID - Amperes  
TC - Degrees Centigrade  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXTA110N055T2  
IXTP110N055T2  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
70  
60  
50  
40  
30  
20  
10  
0
T
J
= - 40oC  
25oC  
150oC  
T
J
= 150oC  
25oC  
- 40oC  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
0
0
1
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
VGS - Volts  
ID - Amperes  
Fig. 10. Gate Charge  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
300  
250  
200  
150  
100  
50  
10  
9
8
7
6
5
4
3
2
1
0
V
= 28V  
DS  
I
I
= 55A  
D
G
= 10mA  
T
= 150oC  
J
T
J
= 25oC  
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1.3  
1.4  
1.5  
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
QG - NanoCoulombs  
VSD - Volts  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
1,000  
100  
10  
10,000  
1,000  
100  
R
Limit  
DS(on)  
C
iss  
25μs  
100μs  
C
C
oss  
rss  
1ms  
TJ = 175oC  
TC = 25oC  
10ms  
= 1 MHz  
f
Single Pulse  
100ms  
10  
1
0
5
10  
15  
20  
25  
30  
35  
40  
10  
100  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTA110N055T2  
IXTP110N055T2  
Fig. 13. Resistive Turn-on Rise Time vs.  
Junction Temperature  
Fig. 14. Resistive Turn-on Rise Time vs.  
Drain Current  
27  
26  
25  
24  
23  
22  
21  
20  
26  
25  
24  
23  
22  
21  
20  
R
G
= 5Ω V  
  
= 10V  
GS  
T
J
= 25oC  
V
= 30V  
DS  
R
= 5Ω ,V = 10V  
GS  
G
V
= 30V  
DS  
I
= 50A  
D
T
J
= 125oC  
I
= 25A  
D
25  
25  
5
30  
35  
40  
45  
50  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
ID - Amperes  
TJ - Degrees Centigrade  
Fig. 15. Resistive Turn-on Switching Times vs.  
Gate Resistance  
Fig. 16. Resistive Turn-off Switching Times vs.  
Junction Temperature  
29  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
27  
26  
25  
24  
23  
22  
65  
55  
45  
35  
25  
15  
t r  
td(on)  
28  
27  
26  
25  
24  
23  
22  
21  
20  
t f  
td(off)  
TJ = 125oC, V = 10V  
GS  
R
G
= 5Ω, V = 10V  
GS  
V
= 30V  
DS  
V
= 30V  
DS  
I
= 50A, 25A  
D
I
= 25A, 50A  
D
5
6
7
8
9
10  
11  
12  
13  
14  
15  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 18. Resistive Turn-off Switching Times vs.  
Gate Resistance  
Fig. 17. Resistive Turn-off Switching Times vs.  
Drain Current  
65  
55  
45  
35  
25  
15  
75  
65  
55  
45  
35  
25  
26.0  
25.5  
25.0  
24.5  
24.0  
23.5  
23.0  
22.5  
22.0  
58  
54  
50  
46  
42  
38  
34  
30  
26  
t f  
td(off)  
t f  
td(off)  
= 125oC, V = 10V  
R
= 5Ω, VGS = 10V  
T
J
G
GS  
VDS = 30V  
V
= 30V  
DS  
I
= 25A  
D
T = 125oC  
I
= 50A  
D
J
T
= 25oC  
J
25  
30  
35  
40  
45  
50  
6
7
8
9
10  
11  
12  
13  
14  
15  
ID - Amperes  
RG - Ohms  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXTA110N055T2  
IXTP110N055T2  
Fig. 19. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: T_110N055T2 (V3) 7-10-18-B  
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