请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXTA6N100D2

型号：

IXTA6N100D2

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

6 页

PDF大小：

172 K

下载PDF手册
Depletion Mode  
MOSFET  
VDSX = 1000V  
ID(on) > 6A  
IXTA6N100D2  
IXTP6N100D2  
IXTH6N100D2  
RDS(on) 2.2  
N-Channel  
D
TO-263 AA (IXTA)  
G
S
G
D (Tab)  
S
TO-220AB (IXTP)  
Symbol  
VDSX  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
1000  
V
G
D
D (Tab)  
VGSX  
VGSM  
Continuous  
Transient  
20  
30  
V
V
S
TO-247 (IXTH)  
PD  
TC = 25C  
300  
W
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
C  
C  
C  
G
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
D
S
D (Tab)  
Md  
Mounting Torque (TO-220 & TO-247)  
1.13 / 10  
Nm/lb.in.  
G = Gate  
S = Source  
D
= Drain  
Weight  
TO-263  
TO-220  
TO-247  
2.5  
3.0  
6.0  
g
g
g
Tab = Drain  
Features  
• Normally ON Mode  
•International Standard Packages  
• Molding Epoxies Meet UL94V-0  
Flammability Classification  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
1000  
- 2.5  
Typ.  
Max.  
BVDSX  
VGS(off)  
IGSX  
VGS = - 5V, ID = 250A  
VDS = 25V, ID = 250A  
VGS = 20V, VDS = 0V  
VDS = VDSX, VGS = - 5V  
V
V
Advantages  
- 4.5  
• Easy to Mount  
• Space Savings  
• High Power Density  
100 nA  
A  
50 A  
IDSX(off)  
5
TJ = 125C  
Applications  
RDS(on)  
ID(on)  
VGS = 0V, ID = 3A, Note 1  
2.2  
• Audio Amplifiers  
• Start-Up Circuits  
• Protection Circuits  
• Ramp Generators  
• Current Regulators  
• Active Loads  
VGS = 0V, VDS = 50V, Note 1  
6
A
DS100183C(4/17)  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXTA6N100D2 IXTP6N100D2  
IXTH6N100D2  
Symbol  
Test Conditions  
Characteristic Values  
TO-220 (IXTP) Outline  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 30V, ID = 3A, Note 1  
2.6  
4.2  
S
Ciss  
Coss  
Crss  
2650  
167  
41  
pF  
pF  
pF  
VGS = -10V, VDS = 25V, f = 1MHz  
td(on)  
tr  
td(off)  
tf  
25  
80  
34  
47  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 5V, VDS = 500V, ID = 3A  
RG = 2.4(External)  
Qg(on)  
Qgs  
95  
11  
51  
nC  
nC  
nC  
Pins: 1 - Gate  
3 - Source  
2 - Drain  
4 - Drain  
VGS = 5V, VDS = 500V, ID = 3A  
Qgd  
RthJC  
RthCS  
0.41C/W  
C/W  
TO-220  
TO-247  
0.50  
0.21  
C/W  
Safe-Operating-Area Specification  
Characteristic Values  
Symbol  
SOA  
Test Conditions  
Min.  
Typ.  
Max.  
VDS = 800V, ID = 225mA, TC = 75C, Tp = 5s  
180  
W
TO-247 (IXTH) AD Outline  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
VSD  
IF = 6A, VGS = -10V, Note 1  
0.8  
1.3  
V
trr  
IRM  
QRM  
952  
16  
7.6  
ns  
A
μC  
IF = 3A, -di/dt = 100A/s  
VR = 100V, VGS = -10V  
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
TO-263 (IXTA) Outline  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
1 = Gate  
2 = Drain  
3 = Source  
A
b
b2  
4.06  
0.51  
1.14  
4.83  
0.99  
1.40  
.160  
.020  
.045  
.190  
.039  
.055  
c
c2  
0.40  
1.14  
0.74  
1.40  
.016  
.045  
.029  
.055  
D
D1  
8.64  
8.00  
9.65  
8.89  
.340  
.280  
.380  
.320  
E
9.65  
10.41  
.380  
.405  
E1  
e
L
L1  
L2  
L3  
6.22  
2.54  
14.61  
2.29  
1.02  
1.27  
8.13  
BSC  
15.88  
2.79  
1.40  
1.78  
.270  
.100 BSC  
.575  
.090  
.040  
.050  
.320  
1. Gate  
2. Drain  
3. Source  
4. Drain  
.625  
.110  
.055  
.070  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463 6,771,478 B2 7,071,537  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
IXTA6N100D2 IXTP6N100D2  
IXTH6N100D2  
Fig. 1. Output Characteristics @ TJ = 25oC  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
6
5
4
3
2
1
0
14  
12  
10  
8
V
= 5V  
GS  
V
= 5V  
GS  
2V  
1V  
2V  
1V  
0V  
0V  
-1V  
6
-1V  
4
- 2V  
- 3V  
2
- 2V  
- 3V  
0
0
1
2
3
4
5
6
7
8
9
10  
11  
0
10  
20  
30  
40  
50  
60  
VDS - Volts  
VDS - Volts  
Fig. 4. Drain Current @ TJ = 25oC  
Fig. 3. Output Characteristics @ TJ = 125oC  
6
5
4
3
2
1
0
1.E-01  
1.E-02  
1.E-03  
1.E-04  
1.E-05  
1.E-06  
1.E-07  
V =  
GS  
V
= 5V  
0V  
GS  
- 3.00V  
- 3.25V  
- 3.50V  
- 3.75V  
-1V  
- 4.00V  
- 4.25V  
- 4.50V  
- 2V  
- 3V  
0
5
10  
15  
20  
25  
0
100 200 300 400 500 600 700 800 900 1000 1100 1200  
VDS - Volts  
VDS - Volts  
Fig. 5. Drain Current @ TJ = 100oC  
Fig. 6. Dynamic Resistance vs. Gate Voltage  
1.E+09  
1.E+08  
1.E+07  
1.E+06  
1.E+05  
1.E-01  
1.E-02  
1.E-03  
1.E-04  
1.E-05  
1.E-06  
V
= 700V - 100V  
∆
DS  
VGS = - 3.25V  
- 3.50V  
- 3.75V  
- 4.00V  
T = 25oC  
J
- 4.25V  
- 4.50V  
T = 100oC  
J
-4.6  
-4.4  
-4.2  
-4.0  
-3.8  
-3.6  
-3.4  
-3.2  
-3.0  
-2.8  
0
100 200 300 400 500 600 700 800 900 1000 1100 1200  
VDS - Volts  
VGS - Volts  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXTA6N100D2 IXTP6N100D2  
IXTH6N100D2  
Fig. 8. RDS(on) Normalized to ID = 3A Value  
vs. Drain Current  
Fig. 7. Normalized RDS(on) vs. Junction Temperature  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
I
= 0V  
GS  
V
= 0V  
5V  
GS  
= 3A  
D
T = 125oC  
J
T = 25oC  
J
-50  
-4.0  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
2
4
6
8
10  
12  
14  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 9. Input Admittance  
Fig. 10. Transconductance  
16  
14  
12  
10  
8
12  
10  
8
V
= 30V  
DS  
V
= 30V  
DS  
T
= - 40oC  
25oC  
J
125oC  
6
T
J
= 125oC  
25oC  
- 40oC  
6
4
4
2
2
0
0
-3.5  
-3.0  
-2.5  
-2.0  
-1.5  
-1.0  
-0.5  
0.0  
0.5  
1.0  
0
2
4
6
8
10  
12  
14  
16  
VGS - Volts  
ID - Amperes  
Fig. 11. Breakdown and Threshold Voltages  
vs. Junction Temperature  
Fig. 12. Forward Voltage Drop of Intrinsic Diode  
18  
16  
14  
12  
10  
8
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
V
= -10V  
GS  
VGS(off) @ V = 25V  
DS  
BVDSX@ V = - 5V  
GS  
T
J
= 125oC  
6
T
J
= 25oC  
4
2
0
-25  
0
25  
50  
75  
100  
125  
150  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
TJ - Degrees Centigrade  
VSD - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTA6N100D2 IXTP6N100D2  
IXTH6N100D2  
Fig. 13. Capacitance  
Fig. 14. Gate Charge  
10,000  
1,000  
100  
5
4
V
= 500V  
DS  
I
I
= 3A  
D
G
3
= 10mA  
C
iss  
2
1
0
-1  
-2  
-3  
-4  
-5  
C
C
oss  
rss  
= 1 MHz  
5
f
10  
0
10  
15  
20  
25  
30  
35  
40  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
VDS - Volts  
QG - NanoCoulombs  
Fig. 15. Forward-Bias Safe Operating Area  
@ TC = 25oC  
Fig. 16. Forward-Bias Safe Operating Area  
@ TC = 75oC  
100  
10  
1
100  
= 150oC  
= 75oC  
T
= 150oC  
= 25oC  
T
J
J
T
C
T
C
Single Pulse  
Single Pulse  
R
Limit  
R
DS(on)  
Limit  
DS(on)  
25μs  
10  
100μs  
100μs  
1ms  
1ms  
1
10ms  
100ms  
10ms  
DC  
100ms  
DC  
0.1  
0.1  
10  
100  
1,000  
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
Fig. 17. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_6N100D2(6C) 7-15-14-A  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
厂商 型号 描述 页数 下载

IXYS

 		IXTA-200N085T N沟道增强模式额定雪崩[ N-Channel Enhancement Mode Avalanche Rated ] 5 页

LITTELFUSE

 		IXTA02N250 [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN ] 5 页

IXYS

 		IXTA02N250HV [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC PACKAGE-3 ] 5 页

LITTELFUSE

 		IXTA02N250HV [ Power Field-Effect Transistor, ] 6 页

IXYS

 		IXTA02N250HV-TRL [ Power Field-Effect Transistor, ] 5 页

IXYS

 		IXTA02N450HV 高电压功率MOSFET[ High Voltage Power MOSFETs ] 5 页

IXYS

 		IXTA05N100 高电压的MOSFET[ High Voltage MOSFET ] 4 页

IXYS

 		IXTA05N100-TRL [ Power Field-Effect Transistor, ] 5 页

LITTELFUSE

 		IXTA05N100HVTRL [ Power Field-Effect Transistor, 0.75A I(D), 1000V, 17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 2 PIN ] 4 页

IXYS

 		IXTA05N100P [ Fast Intrinsic Diode ] 7 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.174015s