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2SK3174A

型号:

2SK3174A

品牌:

RENESAS[ RENESAS TECHNOLOGY CORP ]

页数:

10 页

PDF大小:

103 K

To all our customers  
Regarding the change of names mentioned in the document, such as Hitachi  
Electric and Hitachi XX, to Renesas Technology Corp.  
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas  
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog  
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)  
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand  
names are mentioned in the document, these names have in fact all been changed to Renesas  
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and  
corporate statement, no changes whatsoever have been made to the contents of the document, and  
these changes do not constitute any alteration to the contents of the document itself.  
Renesas Technology Home Page: http://www.renesas.com  
Renesas Technology Corp.  
Customer Support Dept.  
April 1, 2003  
Cautions  
Keep safety first in your circuit designs!  
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better  
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with  
semiconductors may lead to personal injury, fire or property damage.  
Remember to give due consideration to safety when making your circuit designs, with appropriate  
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or  
(iii) prevention against any malfunction or mishap.  
Notes regarding these materials  
1. These materials are intended as a reference to assist our customers in the selection of the Renesas  
Technology Corporation product best suited to the customer's application; they do not convey any  
license under any intellectual property rights, or any other rights, belonging to Renesas Technology  
Corporation or a third party.  
2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any  
third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or  
circuit application examples contained in these materials.  
3. All information contained in these materials, including product data, diagrams, charts, programs and  
algorithms represents information on products at the time of publication of these materials, and are  
subject to change by Renesas Technology Corporation without notice due to product improvements or  
other reasons. It is therefore recommended that customers contact Renesas Technology Corporation  
or an authorized Renesas Technology Corporation product distributor for the latest product information  
before purchasing a product listed herein.  
The information described here may contain technical inaccuracies or typographical errors.  
Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss  
rising from these inaccuracies or errors.  
Please also pay attention to information published by Renesas Technology Corporation by various  
means, including the Renesas Technology Corporation Semiconductor home page  
(http://www.renesas.com).  
4. When using any or all of the information contained in these materials, including product data, diagrams,  
charts, programs, and algorithms, please be sure to evaluate all information as a total system before  
making a final decision on the applicability of the information and products. Renesas Technology  
Corporation assumes no responsibility for any damage, liability or other loss resulting from the  
information contained herein.  
5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device  
or system that is used under circumstances in which human life is potentially at stake. Please contact  
Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor  
when considering the use of a product contained herein for any specific purposes, such as apparatus or  
systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.  
6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in  
whole or in part these materials.  
7. If these products or technologies are subject to the Japanese export control restrictions, they must be  
exported under a license from the Japanese government and cannot be imported into a country other  
than the approved destination.  
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the  
country of destination is prohibited.  
8. Please contact Renesas Technology Corporation for further details on these materials or the products  
contained therein.  
2SK3174A  
Silicon N Channel MOS FET  
UHF Power Amplifier  
ADE-208-1451 (Z)  
1st. Edition  
September 2001  
Features  
High power output, High gain, High efficiency  
P1dB = 220 W , PG = 15.3dB , ηD = 61 % (at P1dB) typ. (f = 860MHz)  
Compact package  
Suitable for push - pull circuit  
Outline  
RFPAK-F  
4
3
D
D
5
G
G
2
1. Drain  
2. Drain  
3. Source  
4. Gate  
5. Gate  
1
S
This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested.  
In AC testing, the part should be mounted on heat sink with thermal compound.  
2SK3174A  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Symbol  
Ratings  
Unit  
V
Note1  
Drain to source voltage  
Gate to source voltage  
Drain current  
VDSS  
60  
VGSS  
ID  
10  
V
16  
A
Note2  
Drain peak current  
Channel dissipation  
Channel temperature  
Storage temperature  
Note: 1. Pin=0, PW 0.1sec  
ID(pulse)  
32  
A
Note3  
Pch  
252  
W
°C  
°C  
Tch  
175  
Tstg  
–55 to +150  
2. PW 10ms, duty cycle 50 %  
3. Value at Tc = 25°C  
Electrical Characteristics  
(Tc = 25°C)  
Item  
Symbol Min  
Typ  
Max  
1
Unit  
mA  
µA  
V
Test Conditions  
Note4  
Zero gate voltage drain current  
IDSS  
VDS = 60 V, VGS = 0  
Note4  
Gate to source leak current  
IGSS  
3
VGS = 10 V, VDS = 0  
Note4  
Gate to source cutoff voltage  
VGS(off)  
|yfs|  
Ciss  
1.0  
4.0  
2.3  
6.7  
162  
3.0  
ID = 1 mA, VDS = 10 V  
Note45  
Note5  
Forward transfer admittance  
S
VDS=10 V, ID = 5 A  
Note4  
Input capacitance  
pF  
VGS = 5 V, VDS = 0  
f = 1 MHz  
Note4  
Reverse transfer capacitance  
Output Power  
Crss  
Pout  
4
pF  
W
VDG = 10 V, VGS = 0  
f = 1 MHz  
200  
270  
VDS = 28 V, IDQ = 1.2 A  
f = 860 MHz  
Pin = 14 W  
Drain Rational  
ηD  
64  
%
VDS = 28 V, IDQ = 1.2 A  
f = 860 MHz  
Pin = 14 W  
Note: 4. Shows 1 unit FET  
5. Pulse Test  
Rev.0, Aug. 2001, page 2 of 2  
2SK3174A  
Main Characteristics  
Maximum Safe Operation Area  
Power vs. Temperature Derating  
400  
300  
200  
100  
50  
20  
10  
5
o
2
1
0.5  
0
1
10  
20  
50  
100  
150  
200  
2
50  
(V)  
5
100  
Drain to Source Voltage  
V
Case Temperature Tc (°C)  
DS  
Typical Output Characteristics  
Typical Transfer Characteristics  
= 10 V  
Pulse Test  
Shows 1 unit FET  
20  
16  
12  
8
20  
16  
12  
8
10 V  
8 V  
V
DS  
6 V  
5 V  
Pulse Test  
Shows 1 unit FET  
4 V  
4
4
V
GS  
= 3 V  
0
0
1
2
3
4
5
6
2
4
6
8
10  
(V)  
Gate to Source Voltage  
V
(V)  
Drain to Source Voltage  
V
DS  
GS  
Rev.0, Aug. 2001, page 3 of 3  
2SK3174A  
Drain to Source Saturatioin Voltage vs.  
Drain Current  
Forward Transfer Admittance vs.  
Drain Current  
10  
5
5
2
1
2
1
0.5  
0.2  
0.1  
0.5  
0.05  
V
= 10 V  
DS  
V
= 10 V  
GS  
0.2  
0.1  
Pulse Test  
Shows 1 unit FET  
Pulse Test  
Shows 1 unit FET  
0.02  
0.01  
10 20  
0.1  
2
0.1 0.2  
0.5  
Drain Current I  
5
0.2 0.5  
1
5
10 20  
(A)  
1
2
50  
Drain Current I  
(A)  
D
D
Input Capacitance vs.  
Gate to Source Voltage  
Gate to Source Cutoff Voltage vs.  
Ambient Temperature  
170  
3.6  
3.2  
2.8  
2.4  
2.0  
1.6  
Shows 1 unit FET  
165  
160  
155  
150  
V
= 0  
145  
140  
DS  
V
= 10 V  
DS  
Shows 1 unit FET  
f = 1 MHz  
- 25  
-10  
- 6  
6 10  
0
25  
50  
75  
100 125  
- 2  
2
Ambient Temperature Ta (°C)  
Gate to Source Voltage V  
GS  
(V)  
Rev.0, Aug. 2001, page 4 of 4  
2SK3174A  
Reverse Transfer Capacitance vs.  
Drain to Gate Voltage  
Output Capacitance vs.  
Drain to Source Voltage  
1000  
500  
100  
50  
V
= 0  
V
= 0  
f = 1 MHz  
Shows 1 unit FET  
GS  
GS  
f = 1 MHz  
Shows 1 unit FET  
20  
10  
5
200  
100  
50  
2
1
20  
10  
1
2
5
10 20  
50 100  
(V)  
1
2
5
10 20  
50 100  
(V)  
Drain to Gate Voltege V  
Drain to Source Voltage V  
DG  
DS  
Output Power, Drain Rational  
vs. Input Power  
Drain Rational vs. Output Power  
80  
60  
40  
20  
400  
300  
200  
80  
60  
40  
20  
η
D
Pout  
100  
0
V
= 28 V  
DS  
= 1.2 A  
V
= 28 V  
DS  
= 1.2 A  
I
DQ  
I
DQ  
f = 860 MHz  
f = 860 MHz  
0
0
2
4
6
8
10 12 14  
0
0
50  
300  
100 150 200 250  
Output Power Pout (W)  
Input power Pin (W)  
Rev.0, Aug. 2001, page 5 of 5  
2SK3174A  
Output Power, Drain Rational  
vs. Frequency  
Inter Modulation  
vs. Total Output Power  
100  
90  
80  
70  
300  
250  
V
= 28 V  
=1.2A  
DS  
IM7L  
Pout  
I
DQ  
IM7H  
f
= 860 MHz  
80  
c
η
f=1MHz  
D
60  
50  
40  
30  
20  
200  
150  
100  
50  
70  
60  
50  
40  
30  
20  
IM3H  
IM3L  
IM5H  
V
I
= 28 V  
DS  
= 1.2 A  
DQ  
Pin = 14 W  
IM5L  
0
830  
30  
50  
46  
34  
38  
42  
840 850 860 870 880 890  
Total Output Power Pout-total (dBm)  
Frequency f (MHz)  
Rev.0, Aug. 2001, page 6 of 6  
2SK3174A  
Package Dimensions  
As of July, 2001  
29.6 0.5  
28.4 0.3  
Unit: mm  
2-C1.0  
2-R1.6  
9.6 0.3  
13.0 0.3  
35.6 0.5  
38.8 0.5  
Hitachi Code  
JEDEC  
RFPAK-F  
JEITA  
Mass (reference value)  
17.2 g  
Rev.0, Aug. 2001, page 7 of 7  
2SK3174A  
Disclaimer  
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,  
copyright, trademark, or other intellectual property rights for information contained in this document.  
Hitachi bears no responsibility for problems that may arise with third party’s rights, including  
intellectual property rights, in connection with use of the information contained in this document.  
2. Products and product specifications may be subject to change without notice. Confirm that you have  
received the latest product standards or specifications before final design, purchase or use.  
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,  
contact Hitachi’s sales office before using the product in an application that demands especially high  
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk  
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,  
traffic, safety equipment or medical equipment for life support.  
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly  
for maximum rating, operating supply voltage range, heat radiation characteristics, installation  
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used  
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable  
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-  
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other  
consequential damage due to operation of the Hitachi product.  
5. This product is not designed to be radiation resistant.  
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without  
written approval from Hitachi.  
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor  
products.  
Sales Offices  
Hitachi, Ltd.  
Semiconductor & Integrated Circuits  
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Tel: (03) 3270-2111 Fax: (03) 3270-5109  
URL  
http://www.hitachisemiconductor.com/  
For further information write to:  
Hitachi Semiconductor  
(America) Inc.  
Hitachi Europe Ltd.  
Hitachi Asia Ltd.  
Hitachi Asia (Hong Kong) Ltd.  
Group III (Electronic Components)  
7/F., North Tower  
Electronic Components Group  
Hitachi Tower  
179 East Tasman Drive Whitebrook Park  
16 Collyer Quay #20-00  
Singapore 049318  
Tel : <65>-538-6533/538-8577  
Fax : <65>-538-6933/538-3877  
URL : http://semiconductor.hitachi.com.sg  
San Jose,CA 95134  
Lower Cookham Road  
World Finance Centre,  
Tel: <1> (408) 433-1990 Maidenhead  
Fax: <1>(408) 433-0223 Berkshire SL6 8YA, United Kingdom  
Tel: <44> (1628) 585000  
Harbour City, Canton Road  
Tsim Sha Tsui, Kowloon Hong Kong  
Tel : <852>-(2)-735-9218  
Fax : <852>-(2)-730-0281  
URL : http://semiconductor.hitachi.com.hk  
Fax: <44> (1628) 585200  
Hitachi Asia Ltd.  
(Taipei Branch Office)  
4/F, No. 167, Tun Hwa North Road  
Hung-Kuo Building  
Taipei (105), Taiwan  
Tel : <886>-(2)-2718-3666  
Fax : <886>-(2)-2718-8180  
Telex : 23222 HAS-TP  
URL : http://www.hitachi.com.tw  
Hitachi Europe GmbH  
Electronic Components Group  
Dornacher Straße 3  
D-85622 Feldkirchen  
Postfach 201, D-85619 Feldkirchen  
Germany  
Tel: <49> (89) 9 9180-0  
Fax: <49> (89) 9 29 30 00  
Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan.  
Colophon 5.0  
Rev.0, Aug. 2001, page 8 of 8  
厂商 型号 描述 页数 下载

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