WV3HG128M72AER-AD6
White Electronic Designs
ADVANCED
DDR2 ICC SPECIFICATIONS AND CONDITIONS
VCC = +1.8V ± 0.1V
Symbol Proposed Conditions
ICC0 Operating one bank active-precharge current;
534
403
Units
tCK = tCK(ICC), tRC = tRC(ICC), tRAS = tRASmin(ICC); CKE is HIGH, CS# is HIGH between valid commands;
Address bus inputs are SWITCHING; Data bus inputs are SWITCHING
2,420
2,250
mA
ICC1
Operating one bank active-read-precharge current;
IOUT = 0mA; BL = 4, CL = CL(ICC), AL = 0; tCK = tCK(ICC), tRC = tRC (ICC), tRAS = tRASmin(ICC), tRCD = tRCD(ICC);
CKE is HIGH, CS# is HIGH between valid commands; Address bus inputs are SWITCHING; Data pattern is
same as IDAD6W
2,640
2,400
mA
ICC2P
ICC2Q
ICC2N
ICC3P
Precharge power-down current;
All banks idle; tCK = tCK(ICC); CKE is LOW; Other control and address bus inputs are STABLE; Data bus
inputs are FLOATING
784
724
mA
mA
mA
Precharge quiet standby current;
All banks idle; tCK = tCK(ICC); CKE is HIGH, CS# is HIGH; Other control and address bus inputs are STABLE;
Data bus inputs are FLOATING
1,110
1,090
1,040
1,130
Precharge standby current;
All banks idle; tCK = tCK(ICC); CKE is HIGH, CS# is HIGH; Other control and address bus inputs are
SWITCHING; Data bus inputs are SWITCHING
Active power-down current;
All banks open; tCK = tCK(ICC); CKE is LOW; Other control and address
bus inputs are STABLE; Data bus inputs are FLOATING
Fast PDN Exit MRS(12) = 0
Slow PDN Exit MRS(12) = 1
1,190
600
1,190
570
mA
mA
ICC3N
Active standby current;
All banks open; tCK = tCK(ICC), tRAS = tRASmax(ICC), tRP = tRP(ICC); CKE is HIGH, CS# is HIGH between valid
commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING
1,840
3,820
1,730
2,900
mA
mA
IDAD6W
Operating burst write current;
All banks open, Continuous burst writes; BL = 4, CL = CL(ICC), AL = 0; tCK = tCK(ICC), tRAS = tRASmax(ICC), tRP
= tRP(ICC); CKE is HIGH, CS# is HIGH between valid commands; Address bus inputs are SWITCHING; Data
bus inputs are SWITCHING
IDAD6R
Operating burst read current;
All banks open, Continuous burst reads, IOUT = 0mA; BL = 4, CL = CL(ICC), AL = 0; tCK = tCK(ICC), tRAS
tRASmax(ICC), tRP = tRP(ICC); CKE is HIGH, CS# is HIGH between valid commands; Address bus inputs are
SWITCHING; Data pattern is same as IDAD6W
=
3,590
3,000
mA
ICC5B
ICC6
ICC7
Burst auto refresh current;
tCK = tCK(ICC); Refresh command at every tRFC(ICC) interval; CKE is HIGH, CS# is HIGH between valid
commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING
4,150
99
3,880
99
mA
mA
Self refresh current;
CK and CK# at 0V; CKE 0.2V; Other control and address bus inputs
are FLOATING; Data bus inputs are FLOATING
Operating bank interleave read current;
All bank interleaving reads, IOUT = 0mA; BL = 4, CL = CL(ICC), AL = tRCD(ICC)-1*tCK(ICC); tCK = tCK(ICC), tRC
tRC(ICC), tRRD = tRRD(ICC), tRCD = 1*tCK(ICC); CKE is HIGH, CS# is HIGH between valid commands; Address
bus inputs are STABLE during DESELECTs; Data pattern is same as IDAD6R; Refer to the following page for
detailed timing conditions
=
5,900
5,570
mA
Note: ICC specification is based on SAMSUNG components. Other DRAM Manufacturers specification may be different.
October 2006
Rev. 2
6
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
