ADVANCE TECHNICAL INFORMATION
PolarHVTM
Power MOSFET
IXTA 14N60P
IXTP 14N60P
IXTQ 14N60P
VDSS
ID25
= 600 V
= 14 A
RDS(on) ≤ 550 mΩ
N-Channel Enhancement Mode
TO-3P(IXTQ)
Symbol
TestConditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
600
600
V
TJ = 25°C to 150°C; RGS = 1 MΩ
V
G
D
VGS
Continuous
Tranisent
30
40
V
V
(TAB)
S
VGSM
TO-220 (IXTP)
ID25
IDM
TC = 25°C
14
42
A
A
TC = 25°C, pulse width limited by TJM
IAR
TC = 25°C
14
A
EAR
EAS
TC = 25°C
TC = 25°C
23
mJ
J
(TAB)
G
D
S
0.9
TO-263(IXTA)
dv/dt
PD
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 4 Ω
,
10
V/ns
TC = 25°C
300
W
G
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
TL
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
300
250
°C
°C
Features
Md
Mounting torque
(TO-3P,TO-220)
1.13/10 Nm/lb.in.
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Weight
TO-3P
TO-220
TO-263
5.5
4
2
g
g
g
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ.
Max.
Advantages
VDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 250µA
VGS = 30 VDC, VDS = 0
600
V
V
z
Easy to mount
Space savings
High power density
z
3.0
5.0
z
100
nA
IDSS
VDS = VDSS
VGS = 0 V
25
250
µA
µA
TJ = 125°C
RDS(on)
VGS = 10 V, ID = 0.5 ID25
550 mΩ
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
DS99329(02/05)
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