IXTN32P60P
Symbol
Test Conditions
Characteristic Values
SOT-227B (IXTN) Outline
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = -10V, ID = 0.5 • ID25, Note 1
VGS = 0V, VDS = - 25V, f = 1MHz
21
32
S
Ciss
Coss
Crss
11.1
925
77
nF
pF
pF
td(on)
tr
td(off)
tf
37
27
95
33
ns
ns
ns
ns
Resistive Switching Times
V
GS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1Ω (External)
Qg(on)
Qgs
196
54
nC
nC
nC
(M4 screws (4x) supplied)
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
58
RthJC
RthCS
0.14 °C/W
°C/W
0.05
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
IS
VGS = 0V
- 32
A
A
V
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = -16A, VGS = 0V, Note 1
-128
- 2.8
trr
480
11.4
nS
μC
A
IF = -16A, -di/dt = -150A/μs
QRM
IRM
VR = -100V, VGS = 0V
- 47.6
Note
1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
