请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXTH1N170DHV

型号：

IXTH1N170DHV

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

239 K

下载PDF手册
Preliminary Technical Information  
Depletion Mode  
MOSFET  
VDSX = 1700V  
ID(on) > 1A  
IXTA1N170DHV  
IXTH1N170DHV  
RDS(on) 16  
N-Channel  
TO-263HV (IXTA)  
G
S
D (Tab)  
TO-247HV (IXTH)  
Symbol  
VDSX  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
1700  
1700  
V
V
VDGX  
VGSX  
VGSM  
Continuous  
Transient  
20  
30  
V
V
G
S
PD  
TC = 25C  
290  
W
D (Tab)  
D
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
C  
C  
C  
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
FC  
Mounting Force (TO-263HV)  
Mounting Torque (TO-247HV)  
10..65 / 22..14.6  
1.13/10  
N/lb  
Md  
Nm/lb.in  
Features  
Weight  
TO-263HV  
TO-247HV  
2.5  
6.0  
g
g
• Normally ON Mode  
• Molding Epoxies Meet UL94V-0  
Flammability Classification  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
• Easy to Mount  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
1700  
- 2.5  
Typ.  
Max.  
• Space Savings  
• High Power Density  
BVDSX  
VGS(off)  
IGSX  
VGS = - 5V, ID = 250A  
VDS = 25V, ID = 250A  
VGS = 20V, VDS = 0V  
VDS = VDSX, VGS = - 5V  
V
- 4.5  
V
Applications  
100 nA  
• Audio Amplifiers  
• Start-Up Circuits  
• Protection Circuits  
• Ramp Generators  
• Current Regulators  
• Active Loads  
IDSX(off)  
10 A  
100 A  
TJ = 125C  
RDS(on)  
ID(on)  
VGS = 0V, ID = 0.5A, Note 1  
VGS = 0V, VDS = 50V, Note 1  
16  
1.0  
A
DS100609A(2/17)  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXTA1N170DHV  
IXTH1N170DHV  
Symbol  
Test Conditions  
Characteristic Values  
TO-263HV-2L Outline  
A
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
E
L1  
c2  
gfs  
VDS = 30V, ID = 0.5A, Note 1  
570  
950  
mS  
D1  
E1  
D
H
3
Ciss  
Coss  
Crss  
3090  
95  
pF  
pF  
pF  
1
A1  
2
L4  
VGS = -10V, VDS = 25V, f = 1MHz  
L
L3  
c
b
b2  
e2  
e1  
30  
PIN: 1 - Gate  
2 - Source  
3 - Drain  
td(on)  
tr  
td(off)  
tf  
46  
38  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 5V, VDS = 850V, ID = 0.5A  
A2  
130  
216  
RG = 10(External)  
Qg(on)  
Qgs  
47  
3.7  
25  
nC  
nC  
nC  
VGS = +5V, VDS = 850V, ID = 0.5A  
Qgd  
RthJC  
RthCS  
0.43C/W  
C/W  
TO-247HV  
0.21  
Safe-Operating-Area Specification  
Characteristic Values  
Min. Typ. Max.  
Symbol  
SOA  
Test Conditions  
VDS = 1700V, ID = 100mA, TC = 75C, Tp = 5s 170  
W
V
TO-247HV Outline  
E
A
E1  
R
0P  
A2  
0P1  
Source-Drain Diode  
Q
S
Symbol  
Test Conditions  
Characteristic Values  
D1  
D2  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
D
4
VSD  
IF = 1A, VGS = -10V, Note 1  
0.75  
1.30  
1
2
3
L1  
L
A3  
2X  
D3  
E2  
E3  
4X  
trr  
IRM  
QRM  
2.8  
45.0  
63.0  
μs  
A
μC  
A1  
IF = 1A, -di/dt = 100A/s  
VR = 100V, VGS = -10V  
e
b
b1  
c
e1  
3X  
3X  
PINS:  
1 - Gate 2 - Source  
3, 4 - Drain  
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
PRELIMANARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1  
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1  
4,835,592 4,931,844 5,049,961 5,237,481 6,162,665  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTA1N170DHV  
IXTH1N170DHV  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
Fig. 1. Output Characteristics @ TJ = 25oC  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
V
= 5V  
0V  
GS  
V
= 5V  
GS  
0V  
-1V  
-1V  
- 2V  
- 3V  
- 2V  
- 3V  
0
2
4
6
8
10  
12  
14  
0
10  
20  
30  
40  
50  
60  
70  
80  
VDS - Volts  
VDS - Volts  
Fig. 3. Output Characteristics @ TJ = 125oC  
Fig. 4. Drain Current @ TJ = 25oC  
1
0.8  
0.6  
0.4  
0.2  
0
1.E-01  
1.E-02  
1.E-03  
1.E-04  
1.E-05  
1.E-06  
1.E-07  
1.E-08  
1.E-09  
VGS = - 3.25V  
V
= 5V  
0V  
GS  
- 3.50V  
- 3.75V  
- 4.00V  
-1V  
- 2V  
- 4.25V  
- 4.50V  
- 4.75V  
- 5.00V  
- 3V  
0
200  
400  
600  
800  
1,000 1,200 1,400 1,600 1,800 2,000  
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 5. Drain Current @ TJ = 100oC  
Fig. 6. Dynamic Resistance vs. Gate Voltage  
1.E-01  
1.E-02  
1.E-03  
1.E-04  
1.E-05  
1.E-06  
1.E-07  
1.E+11  
1.E+10  
1.E+09  
1.E+08  
1.E+07  
1.E+06  
1.E+05  
V
= - 3.50V  
GS  
∆V = 1,000V - 500V  
DS  
- 3.75V  
- 4.00V  
T = 25oC  
J
- 4.25V  
- 4.5V  
T = 100oC  
J
- 4.75V  
- 5.00V  
0
200  
400  
600  
800  
1,000 1,200 1,400 1,600 1,800 2,000  
-5.00  
-4.75  
-4.50  
-4.25  
-4.00  
-3.75  
-3.50  
-3.25  
-3.00  
VGS - Volts  
VDS - Volts  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXTA1N170DHV  
IXTH1N170DHV  
Fig. 8. RDS(on) Normalized to ID = 0.5A Value  
Fig. 7. Normalized RDS(on) vs. Junction Temperature  
vs. Drain Current  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 0V  
V
= 0V  
5V  
GS  
GS  
I
= 0.5A  
D
T = 125oC  
J
T = 25oC  
J
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 9. Input Admittance  
Fig. 10. Transconductance  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
V
= 50V  
V
= 50V  
DS  
DS  
T
J
= - 40oC  
25oC  
125oC  
T
J
= 125oC  
25oC  
- 40oC  
-4  
-3.5  
-3  
-2.5  
-2  
-1.5  
-1  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
VGS - Volts  
ID - Amperes  
Fig. 11. Normalized Breakdown and Threshold  
Voltages vs. Junction Temperature  
Fig. 12. Forward Voltage Drop of Intrinsic Diode  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
1.25  
1.20  
1.15  
1.10  
1.05  
1.00  
0.95  
0.90  
0.85  
V
= -10V  
GS  
V
@ V = 25V  
DS  
GS(off)  
BV  
@ V = - 5V  
GS  
DSX  
T
J
=125oC  
T
J
= 25oC  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
VSD - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTA1N170DHV  
IXTH1N170DHV  
Fig. 13. Capacitance  
Fig. 14. Gate Charge  
10,000  
1,000  
100  
5
4
= 1 MHz  
f
V
= 850V  
DS  
I
I
= 0.5A  
D
G
3
= 10mA  
C
iss  
2
1
0
-1  
-2  
-3  
-4  
-5  
C
oss  
C
rss  
10  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
0
5
10  
15  
20  
25  
30  
35  
40  
QG - NanoCoulombs  
VDS - Volts  
Fig. 15. Forward-Bias Safe Operating Area  
@ TC = 25oC  
Fig. 16. Forward-Bias Safe Operating Area  
@ TC = 75oC  
10  
10  
25μs  
100μs  
R
DS(on)  
Limit  
R
DS(on)  
Limit  
100μs  
1
1
1ms  
1ms  
10ms  
T = 150oC  
T = 150oC  
J
J
= 75oC  
T
C
= 25oC  
T
C
10ms  
100ms  
DC  
Single Pulse  
Single Pulse  
DC  
100ms  
0.1  
0.1  
10  
100  
1,000  
10,000  
10  
100  
1,000  
10,000  
VDS - Volts  
VDS - Volts  
Fig. 17. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Second  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_1N170D (4M) 01-23-14  
厂商 型号 描述 页数 下载

IXYS

 		IXTA-200N085T N沟道增强模式额定雪崩[ N-Channel Enhancement Mode Avalanche Rated ] 5 页

LITTELFUSE

 		IXTA02N250 [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN ] 5 页

IXYS

 		IXTA02N250HV [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC PACKAGE-3 ] 5 页

LITTELFUSE

 		IXTA02N250HV [ Power Field-Effect Transistor, ] 6 页

IXYS

 		IXTA02N250HV-TRL [ Power Field-Effect Transistor, ] 5 页

IXYS

 		IXTA02N450HV 高电压功率MOSFET[ High Voltage Power MOSFETs ] 5 页

IXYS

 		IXTA05N100 高电压的MOSFET[ High Voltage MOSFET ] 4 页

IXYS

 		IXTA05N100-TRL [ Power Field-Effect Transistor, ] 5 页

LITTELFUSE

 		IXTA05N100HVTRL [ Power Field-Effect Transistor, 0.75A I(D), 1000V, 17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 2 PIN ] 4 页

IXYS

 		IXTA05N100P [ Fast Intrinsic Diode ] 7 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.222485s