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IXTP120N04T2

型号：

IXTP120N04T2

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

203 K

下载PDF手册
TrenchT2TM  
Power MOSFET  
VDSS = 40V  
ID25 = 120A  
RDS(on) ≤ 6.1mΩ  
IXTA120N04T2  
IXTP120N04T2  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263  
G
S
(TAB)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TO-220  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
40  
40  
V
V
VDGR  
VGSM  
Transient  
± 20  
V
ID25  
IDM  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
120  
360  
A
A
G
D
(TAB)  
Drain  
S
IA  
TC = 25°C  
TC = 25°C  
TC = 25°C  
50  
400  
200  
A
mJ  
W
G = Gate  
S = Source  
D
=
EAS  
PD  
TAB = Drain  
TJ  
-55 ... +175  
175  
°C  
°C  
°C  
Features  
TJM  
Tstg  
z International standard packages  
z Avalanche rated  
-55 ... +175  
TL  
TSOLD  
1.6mm (0.062in.) from case for 10s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
z Low package inductance  
z 175°C Operating Temperature  
z High current handling capability  
Md  
Mounting torque (TO-220)  
1.13 / 10  
Nm/lb.in.  
z
Low RDS(on)  
Weight  
TO-263  
TO-220  
2.5  
3.0  
g
g
Advantages  
z
Easy to mount  
Space savings  
High power density  
z
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = ± 20V, VDS = 0V  
40  
V
V
Applications  
2.0  
4.0  
±100 nA  
μA  
• Synchronous Buck Converters  
• High Current Switching Power  
Supplies  
IDSS  
VDS = VDSS  
VGS = 0V  
2
TJ = 150°C  
50 μA  
6.1 mΩ  
• Battery Powered Electric Motors  
RDS(on)  
VGS = 10V, ID = 25A, Notes 1, 2  
• Resonant-mode power supplies  
• Electronics Ballast Application  
• Class D Audio Amplifiers  
DS99973A(11/08)  
© 2008 IXYS CORPORATION, All rights reserved  
IXTA120N04T2  
IXTP120N04T2  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
TO-263 (IXTA) Outline  
(TJ = 25°C, unless otherwise specified)  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
28  
47  
S
Ciss  
Coss  
Crss  
3240  
557  
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
140  
td(on)  
tr  
td(off)  
tf  
14  
8
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 20V, ID = 0.5 • ID25  
16  
11  
RG = 5Ω (External)  
Qg(on)  
Qgs  
58  
17  
10  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
RthJC  
RthCH  
0.75 °C/W  
°C/W  
TO-220  
0.50  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
120  
480  
1.2  
IS  
VGS = 0V  
A
A
V
ISM  
VSD  
Repetitive, Pulse width limited by TJM  
IF = 60A, VGS = 0V, Note 1  
IF = 60A, VGS = 0V  
TO-220 (IXTP) Outline  
trr  
35  
1.6  
28  
ns  
A
-di/dt = 100A/μs  
VR = 20V  
IRM  
QRM  
nC  
Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
2. On through-hole packages, RDS(on) Kelvin test contact  
location must be 5mm or less from the package body.  
Pins: 1 - Gate  
3 - Source  
2 - Drain  
4 - Drain  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTA120N04T2  
IXTP120N04T2  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
350  
300  
250  
200  
150  
100  
50  
120  
100  
80  
60  
40  
20  
0
VGS = 15V  
VGS = 15V  
10V  
9V  
10V  
9V  
8V  
7V  
6V  
8V  
7V  
6V  
5V  
5V  
0
0
1
2
3
4
5
6
7
8
0.0  
0.0  
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 60A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 150ºC  
120  
100  
80  
60  
40  
20  
0
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
VGS = 15V  
VGS = 10V  
10V  
9V  
8V  
I D = 120A  
7V  
6V  
I D = 60A  
5V  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 60A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
130  
120  
110  
100  
90  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VGS = 10V  
15V  
- - - -  
TJ = 175ºC  
80  
70  
60  
50  
40  
30  
TJ = 25ºC  
20  
10  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
30  
60  
90  
120  
150  
180  
210  
240  
270  
ID - Amperes  
TC - Degrees Centigrade  
© 2008 IXYS CORPORATION, All rights reserved  
IXTA120N04T2  
IXTP120N04T2  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
70  
60  
50  
40  
30  
20  
10  
0
TJ = - 40ºC  
25ºC  
150ºC  
TJ = 150ºC  
25ºC  
- 40ºC  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
300  
270  
240  
210  
180  
150  
120  
90  
VDS = 20V  
I D = 60A  
I G = 10mA  
TJ = 150ºC  
TJ = 25ºC  
60  
30  
0
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5  
VSD - Volts  
0
10  
20  
30  
40  
50  
60  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
10,000  
1,000  
100  
1000  
100  
10  
= 1 MHz  
f
R
Limit  
DS(on)  
C
iss  
25µs  
100µs  
1ms  
C
oss  
DC  
T
T
= 175ºC  
= 25ºC  
J
10ms  
100ms  
C
C
rss  
Single Pulse  
1
1
10  
100  
0
5
10  
15  
20  
25  
30  
35  
40  
VDS - Volts  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: T_120N04T2(V3)12-15-08-A  
IXTA120N04T2  
IXTP120N04T2  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
11  
10  
9
11  
10  
9
RG = 5Ω  
RG = 5Ω  
VGS = 10V  
VDS = 20V  
VGS = 10V  
VDS = 20V  
TJ = 25ºC  
8
8
7
7
I D = 60A  
6
6
5
I D = 120A  
5
4
TJ = 125ºC  
4
3
3
2
2
1
20  
30  
40  
50  
60  
70  
80  
90  
100  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
16  
18  
17  
16  
15  
14  
13  
12  
11  
10  
28  
17  
t r  
td(on) - - - -  
16  
15  
14  
13  
12  
11  
10  
9
t f  
t
RG = 5Ω, VGS = 10V  
d(off) - - - -  
26  
24  
22  
20  
18  
16  
14  
12  
10  
8
14  
12  
10  
8
TJ = 125ºC, VGS = 10V  
VDS = 20V  
VDS = 20V  
I D = 60A  
I D = 60A, 120A  
I D = 120A  
6
4
2
8
7
0
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
4
6
8
10  
12  
14  
16  
18  
20  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
24  
22  
20  
18  
16  
14  
12  
10  
8
28  
tf  
td(off) - - - -  
tf  
RG = 5Ω, VGS = 10V  
t
d(off) - - - -  
26  
24  
22  
20  
18  
16  
14  
12  
TJ = 125ºC, VGS = 10V  
VDS = 20V  
VDS = 20V  
I D = 60A  
TJ = 125ºC, 25ºC  
I D = 120A  
4
6
8
10  
12  
14  
16  
18  
20  
20  
30  
40  
50  
60  
70  
80  
90  
100  
RG - Ohms  
ID - Amperes  
© 2008 IXYS CORPORATION, All rights reserved  
IXTA120N04T2  
IXTP120N04T2  
Fig. 19. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: T_120N04T2(V3)12-15-08-A  
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