请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXTA80N12T2

型号：

IXTA80N12T2

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

7 页

PDF大小：

205 K

下载PDF手册
TrenchT2TM  
Power MOSFETs  
VDSS = 120V  
ID25 = 80A  
RDS(on) 17m  
IXTA80N12T2  
IXTP80N12T2  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Rectifier  
TO-263AA (IXTA)  
G
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
D (Tab)  
TJ = 25C to 175C  
TJ = 25C to 175C, RGS = 1M  
120  
120  
V
V
VDGR  
TO-220AB (IXTP)  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
ID25  
IDM  
TC = 25C  
80  
A
A
G
TC = 25C, Pulse Width Limited by TJM  
200  
D
D (Tab)  
= Drain  
S
IA  
TC = 25C  
TC = 25C  
TC = 25C  
40  
400  
325  
A
mJ  
W
EAS  
PD  
G = Gate  
D
S = Source  
Tab = Drain  
TJ  
-55 ... +175  
175  
C  
C  
C  
TJM  
Tstg  
Features  
-55 ... +175  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
International Standard Packages  
175°C Operating Temperature  
Avalanche Rated  
Md  
Mounting Torque (TO-220)  
1.13 / 10  
Nm/lb.in.  
Low RDS(on)  
Weight  
TO-263  
TO-220  
2.5  
3.0  
g
g
Fast Intrinsic Rectifier  
High Current Handling Capability  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min. Typ.  
Max.  
Easy to Mount  
Space Savings  
High Power Density  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250A  
VDS = VGS, ID = 100A  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS= 0V  
120  
2.5  
V
V
4.5  
            200 nA  
A  
Applications  
IDSS  
5
Synchronous Rectification  
DC/DC Converters and Off-Line UPS  
Primary- Side Switch  
High Current Switching Applications  
TJ = 150C  
VGS = 10V, ID = 0.5 • ID25, Notes 1, 2  
175  A  
17 m  
RDS(on)  
DS100240A(8/13)  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXTA80N12T2  
IXTP80N12T2  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
TO-263 Outline  
(TJ = 25C, Unless Otherwise Specified)  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
36  
60  
S
Ciss  
Coss  
Crss  
4740  
415  
66  
pF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
21  
14  
39  
28  
ns  
ns  
ns  
ns  
Resistive Switching Times  
Pins:  
1 - Gate  
2,4 - Drain  
3 - Source  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 10(External)  
Qg(on)  
Qgs  
80  
23  
20  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
RthJC  
RthCH  
0.46 C/W  
C/W  
TO-220  
0.50  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min. Typ.  
Max.  
IS  
VGS = 0V  
80  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
320  
1.3  
TO-220 Outline  
trr  
90  
4
ns  
A
IF = 0.5 • ID25, VGS = 0V  
IRM  
QRM  
-di/dt = 100A/s  
VR = 60V  
180  
nC  
Notes: 1. Pulse test, t 300s, duty cycle, d  2%.  
2. On through-hole packages, RDS(on) Kelvin test contact  
location must be 5mm or less from the package body.  
Pins: 1 - Gate  
3 - Source  
2 - Drain  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTA80N12T2  
IXTP80N12T2  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
80  
70  
60  
50  
40  
30  
20  
10  
0
250  
200  
150  
100  
50  
V
= 10V  
GS  
V
= 15V  
10V  
GS  
9V  
8V  
7V  
6V  
8V  
7V  
6V  
5V  
5V  
0
0
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
3.5  
250  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 40A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150ºC  
80  
70  
60  
50  
40  
30  
20  
10  
0
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
V
= 15V  
GS  
V
= 10V  
GS  
10V  
8V  
7V  
6V  
5V  
I
= 80A  
D
I
= 40A  
D
4V  
0.5  
1
1.5  
2
2.5  
3
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 40A Value vs.  
Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
= 10V  
GS  
T
= 175ºC  
J
T = 25ºC  
J
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
50  
100  
150  
200  
ID - Amperes  
TC - Degrees Centigrade  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXTA80N12T2  
IXTP80N12T2  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
140  
120  
100  
80  
120  
100  
80  
60  
40  
20  
0
T
= - 40ºC  
J
25ºC  
150ºC  
T
J
= 150ºC  
60  
25ºC  
- 40ºC  
40  
20  
0
3
0.3  
0
4
5
6
7
0
20  
40  
60  
80  
100  
120  
140  
160  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
250  
200  
150  
100  
50  
10  
9
8
7
6
5
4
3
2
1
0
V
= 60V  
DS  
I
I
= 40A  
D
G
= 10mA  
T
= 150ºC  
J
T
= 25ºC  
J
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1.3  
1.4  
1.5  
0
10  
20  
30  
40  
50  
60  
70  
80  
QG - NanoCoulombs  
VSD - Volts  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
1000  
100  
10  
10000  
1000  
100  
R
Limit  
DS(on)  
C
iss  
25µs  
100µs  
C
oss  
rss  
1ms  
1
T
= 175ºC  
J
10ms  
C
DC  
T
= 25ºC  
C
= 1 MHz  
5
f
Single Pulse  
0.1  
10  
1
10  
100  
1,000  
10  
15  
20  
25  
30  
35  
40  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTA80N12T2  
IXTP80N12T2  
Fig. 14. Resistive Turn-on Rise Time vs.  
Drain Current  
Fig. 13. Resistive Turn-on Rise Time vs.  
Junction Temperature  
20  
18  
16  
14  
12  
10  
20  
18  
16  
14  
12  
10  
R
= 10Ω , V = 10V  
R = 10Ω , V = 10V  
G GS  
G
GS  
V
= 60V  
V
= 60V  
DS  
DS  
T
J
= 125ºC  
I
= 80A  
D
I
= 40A  
D
T
J
= 25ºC  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
40  
45  
50  
55  
60  
65  
70  
75  
80  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on Switching Times vs.  
Gate Resistance  
Fig. 16. Resistive Turn-off Switching Times vs.  
Junction Temperature  
180  
160  
140  
120  
100  
80  
135  
60  
50  
40  
30  
20  
10  
0
80  
70  
60  
50  
40  
30  
20  
t r  
t
d(on) - - - -  
t f  
t
d(off) - - - -  
120  
105  
90  
75  
60  
45  
30  
15  
0
TJ = 125ºC, V = 10V  
GS  
R
G
= 10Ω, V = 10V  
GS  
V
= 60V  
DS  
V
= 60V  
DS  
I
= 80A  
D
I
= 40A  
D
60  
I
= 40A  
D
I
= 80A  
D
40  
20  
0
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
10  
15  
20  
25  
30  
35  
40  
45  
50  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 18. Resistive Turn-off Switching Times vs.  
Gate Resistance  
Fig. 17. Resistive Turn-off Switching Times vs.  
Drain Current  
140  
350  
300  
250  
200  
150  
100  
50  
40  
80  
t f  
t
t f  
t
d(off) - - - -  
d(off) - - - -  
120  
100  
80  
60  
40  
20  
0
35  
30  
25  
20  
15  
10  
R
G
= 10ꢀ, VGS = 10V  
70  
60  
50  
40  
30  
20  
T = 125ºC, V = 10V  
J GS  
VDS = 60V  
V
= 60V  
DS  
I
= 80A, 40A  
D
T
J
= 25ºC, 125ºC  
0
10  
15  
20  
25  
30  
35  
40  
45  
50  
40  
45  
50  
55  
60  
65  
70  
75  
80  
ID - Amperes  
RG - Ohms  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXTA80N12T2  
IXTP80N12T2  
Fig. 19. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: IXT_80N12T2 (V4)3-11-10  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
厂商 型号 描述 页数 下载

IXYS

 		IXTA-200N085T N沟道增强模式额定雪崩[ N-Channel Enhancement Mode Avalanche Rated ] 5 页

LITTELFUSE

 		IXTA02N250 [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN ] 5 页

IXYS

 		IXTA02N250HV [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC PACKAGE-3 ] 5 页

LITTELFUSE

 		IXTA02N250HV [ Power Field-Effect Transistor, ] 6 页

IXYS

 		IXTA02N250HV-TRL [ Power Field-Effect Transistor, ] 5 页

IXYS

 		IXTA02N450HV 高电压功率MOSFET[ High Voltage Power MOSFETs ] 5 页

IXYS

 		IXTA05N100 高电压的MOSFET[ High Voltage MOSFET ] 4 页

IXYS

 		IXTA05N100-TRL [ Power Field-Effect Transistor, ] 5 页

LITTELFUSE

 		IXTA05N100HVTRL [ Power Field-Effect Transistor, 0.75A I(D), 1000V, 17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 2 PIN ] 4 页

IXYS

 		IXTA05N100P [ Fast Intrinsic Diode ] 7 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.203497s