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IXTT12N150HV-TRL

型号：

IXTT12N150HV-TRL

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

142 K

下载PDF手册
High Voltage  
Power MOSFET  
VDSS = 1500V  
ID25 = 12A  
RDS(on) 2.2  
IXTT12N150HV  
N-Channel Enhancement Mode  
Fast Intrinsic Diode  
TO-268HV  
G
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
S
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
1500  
1500  
V
V
D (Tab)  
VDGR  
G = Gate  
S = Source  
D
= Drain  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
Tab = Drain  
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
12  
A
A
40  
IA  
EAS  
TC = 25°C  
TC = 25°C  
6
A
750  
mJ  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150C  
TC = 25C  
5
V/ns  
W
Features  
890  
High Blocking Voltage  
High Voltage Package  
Fast Intrinsic Diode  
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
C  
C  
C  
Low Package Inductance  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
Advantages  
Weight  
4
g
Easy to Mount  
Space Savings  
High Power Density  
Symbol  
Test Conditions  
Characteristic Values  
Applications  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
1500  
2.5  
Typ.  
Max.  
High Voltage Power Supplies  
Capacitor Discharge  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 250A  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
4.5  
Pulse Circuits  
100 nA  
IDSS  
25 A  
TJ = 125C  
500 A  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
2.2  
DS100530B(6/15)  
© 2015 IXYS CORPORATION, All Rights Reserved  
IXTT12N150HV  
Symbol  
Test Conditions  
Characteristic Values  
TO-268HV Outline  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 20V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
8
13  
S
Ciss  
Coss  
Crss  
3720  
240  
80  
pF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
26  
16  
53  
14  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 2(External)  
PINS:  
1 - Gate  
2 - Source  
3 - Drain  
Qg(on)  
Qgs  
106  
17  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
50  
RthJC  
0.14 C/W  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
12  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
48  
1.4  
trr  
1.2  
24.5  
14.8  
μs  
A
IF = 6A, -di/dt = 100A/s  
IRM  
QRM  
VR = 100V, VGS = 0V  
μC  
Note  
1. Pulse test, t 300μs, duty cycle, d 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTT12N150HV  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Output Characteristics @ TJ = 125ºC  
14  
12  
10  
8
8
7
6
5
4
3
2
1
0
V
= 10V  
7V  
GS  
V
= 10V  
6V  
GS  
6V  
5.5V  
5V  
5V  
6
4
2
4V  
0
0
5
10  
15  
20  
25  
30  
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 3. RDS(on) Normalized to ID = 6A Value vs.  
Junction Temperature  
Fig. 4. RDS(on) Normalized to ID = 6A Value vs.  
Drain Current  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
V
= 10V  
GS  
V
= 10V  
GS  
T
J
= 125ºC  
I
= 12A  
D
I
= 6A  
D
T
J
= 25ºC  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
2
4
6
8
10  
12  
14  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 5. Maximum Drain Current vs.  
Case Temperature  
Fig. 6. Input Admittance  
14  
12  
10  
8
14  
12  
10  
8
T
J
= 125ºC  
25ºC  
- 40ºC  
6
6
4
4
2
2
0
0
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TC - Degrees Centigrade  
VGS - Volts  
© 2015 IXYS CORPORATION, All Rights Reserved  
IXTT12N150HV  
Fig. 8. Forward Voltage Drop of Intrinsic Diode  
Fig. 7. Transconductance  
22  
20  
18  
16  
14  
12  
10  
8
40  
35  
30  
25  
20  
15  
10  
5
T
J
= - 40ºC  
25ºC  
125ºC  
T
J
= 125ºC  
6
T
J
= 25ºC  
0.9  
4
2
0
0
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
1.0  
0
2
4
6
8
10  
12  
14  
VSD - Volts  
ID - Amperes  
Fig. 10. Capacitance  
Fig. 9. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
10,000  
1,000  
100  
V
= 700V  
DS  
I
I
= 6A  
D
G
C
iss  
= 10mA  
C
C
oss  
rss  
= 1 MHz  
5
f
10  
0
10  
15  
20  
25  
30  
35  
40  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
110  
VDS - Volts  
QG - NanoCoulombs  
Fig. 11. Forward-Bias Safe Operating Area  
Fig. 12. Maximum Transient Thermal Impedance  
100  
10  
1
1
25µs  
R
Limit  
DS(on)  
0.1  
100µs  
1ms  
0.01  
T
= 150ºC  
= 25ºC  
J
T
C
10ms  
DC  
Single Pulse  
0.1  
0.001  
10  
100  
1,000  
10,000  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: T_12N150 (8M) 5-23-11  
厂商 型号 描述 页数 下载

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