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IXTH03N400

型号:

IXTH03N400

品牌:

IXYS[ IXYS CORPORATION ]

页数:

4 页

PDF大小:

186 K

Advance Technical Information  
High Voltage  
Power MOSFET  
VDSS = 4000V  
ID25 = 300mA  
RDS(on) 290Ω  
IXTH03N400  
IXTV03N400S  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-247 (IXTH)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
4000  
4000  
V
V
D
D (Tab)  
S
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
PLUS220SMD (IXTV_S)  
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
300  
800  
mA  
mA  
PD  
TC = 25°C  
130  
W
G
S
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
°C  
°C  
°C  
D (Tab)  
G = Gate  
S = Source  
D
= Drain  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
Tab = Drain  
Md  
FC  
Mounting Torque (TO-247)  
Mounting Force (PLUS220)  
1.13 / 10  
Nm/lb.in.  
N/lb.  
11..65 / 25..14.6  
Features  
Weight  
PLUS220  
TO-247  
4
6
g
g
z International Standard Packages  
z Molding Epoxies meet UL 94 V-0  
Flammability Classification  
Advantages  
z
Symbol  
Test Conditions  
Characteristic Values  
Easy to Mount  
Space Savings  
High Power Density  
z
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
4000  
2.0  
Typ. Max.  
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = ±20V, VDS = 0V  
VDS = 0.8 • VDSS, VGS = 0V  
V
V
4.0  
Applications  
±100 nA  
z High Voltage Power Supplies  
z Capacitor Discharge  
z Pulse Circuits  
IDSS  
10 μA  
750 μA  
TJ = 125°C  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
290  
Ω
DS100214(11/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXTH03N400  
IXTV03N400S  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 (IXTH) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 50V, ID = 100mA, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
110  
180  
mS  
Ciss  
Coss  
Crss  
435  
19  
6
pF  
pF  
pF  
P  
1
2
3
td(on)  
tr  
td(off)  
tf  
17  
16  
86  
58  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 250V, ID = 150mA  
RG = 50Ω (External)  
e
Terminals: 1 - Gate  
2 - Drain  
Tab - Drain  
Qg(on)  
Qgs  
16.3  
1.9  
nC  
nC  
nC  
3 - Source  
VGS = 10V, VDS = 1000V, ID = 0.5 • ID25  
(TO-247 & PLUS220)  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
Qgd  
8.8  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
RthJC  
RthCS  
0.96 °C/W  
°C/W  
0.25  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
Source-Drain Diode  
20.80 21.46  
15.75 16.26  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
Symbol  
Test Conditions  
Characteristic Values  
.780 .800  
.177  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
P 3.55  
3.65  
.140 .144  
IS  
VGS = 0V  
300 mA  
Q
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
ISM  
VSD  
trr  
Repetitive, Pulse Width Limited by TJM  
IF = 300mA, VGS = 0V, Note 1  
IF = 1A, -di/dt = 100A/μs, VR = 200V  
1.2  
3.0  
A
V
PLUS220SMD (IXTV_S) Outline  
2.8  
μs  
Notes  
1. Pulse test, t 300μs, duty cycle, d 2%.  
2. Additional provisions for lead-to-lead voltage isolation are  
required at VCE > 1200V.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTH03N400  
IXTV03N400S  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
300  
250  
200  
150  
100  
50  
700  
600  
500  
400  
300  
200  
100  
0
VGS = 10V  
6V  
VGS = 10V  
6V  
5V  
4V  
5V  
4V  
0
0
0
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
0
50  
100  
150  
200  
250  
300  
350  
400  
150  
150  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 150mA Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
300  
250  
200  
150  
100  
50  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
VGS = 10V  
6V  
VGS = 10V  
5V  
I D = 300mA  
I D = 150mA  
4V  
3V  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
-50  
-25  
0
25  
50  
75  
100  
125  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 150mA Value  
vs. Drain Current  
Fig. 6. Maximum Drain Current  
vs. Case Temperature  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
350  
300  
250  
200  
150  
100  
50  
VGS = 10V  
TJ = 125ºC  
TJ = 25ºC  
0
100  
200  
300  
400  
500  
600  
-50  
-25  
0
25  
50  
75  
100  
125  
ID - MilliAmperes  
TC - Degrees Centigrade  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXTH03N400  
IXTV03N400S  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
350  
300  
250  
200  
150  
100  
50  
400  
350  
300  
250  
200  
150  
100  
50  
TJ = - 40ºC  
25ºC  
125ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
0
0
0
50  
100  
150  
200  
250  
300  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
ID - MilliAmperes  
VGS - Volts  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
VDS = 1000V  
I D = 150mA  
8
I
G = 1mA  
7
6
5
4
3
2
TJ = 125ºC  
1
0
TJ = 25ºC  
1.5  
0
2
4
6
8
10  
12  
14  
16  
18  
0.0  
0.5  
1.0  
2.0  
2.5  
3.0  
3.5  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Maximum Transient Thermal Impedance  
adad  
2.0  
1.0  
1,000  
100  
10  
C
iss  
C
oss  
C
rss  
f = 1 MHz  
5
1
0.1  
0
10  
15  
20  
25  
30  
35  
40  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
VDS - Volts  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: T_03N400(3P)10-27-09  
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