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IXTX120P20T

型号：

IXTX120P20T

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

228 K

下载PDF手册
TrenchPTM  
Power MOSFETs  
VDSS = - 200V  
ID25 = - 120A  
IXTK120P20T  
IXTX120P20T  
RDS(on)  
≤
30mΩ  
trr  
≤
300ns  
P-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Rectifier  
TO-264 (IXTK)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
D
S
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
- 200  
- 200  
V
V
VDGR  
Tab  
VGSS  
VGSM  
Continuous  
Transient  
±15  
±25  
V
V
PLUS247 (IXTX)  
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
-120  
A
A
- 400  
IA  
EAS  
TC = 25°C  
TC = 25°C  
-100  
3
A
J
G
D
S
Tab  
dv/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
10  
V/ns  
W
1040  
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
z
International Standard Packages  
Avalanche Rated  
Extended FBSOA  
Fast Intrinsic Recitifier  
Low RDS(ON) and QG  
z
z
Md  
FC  
Mounting Torque (TO-264)  
Mounting Force (PLUS247)  
1.13/10  
Nm/lb.in.  
N/lb.  
z
z
20..120 /4.5..27  
Weight  
TO-264  
PLUS247  
10  
6
g
g
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
z
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
- 200  
- 2.5  
Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = - 250μA  
VDS = VGS, ID = - 250μA  
VGS = ±15V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
z
- 4.5  
High-Side Switching  
Push Pull Amplifiers  
DC Choppers  
Automatic Test Equipment  
Current Regulators  
Battery Charger Applications  
z
±200 nA  
z
z
IDSS  
- 25 μA  
z
TJ = 125°C  
- 300 μA  
z
RDS(on)  
VGS = -10V, ID = 0.5 • ID25, Note 1  
30 mΩ  
DS100401B(5/13)  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXTK120P20T  
IXTX120P20T  
Symbol  
Test Conditions  
Characteristic Values  
TO-264 AA Outline  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = -10V, ID = - 60A, Note 1  
VGS = 0V, VDS = - 25V, f = 1MHz  
85  
145  
S
Ciss  
Coss  
Crss  
73  
2550  
480  
nF  
pF  
pF  
td(on)  
90  
ns  
Resistive Switching Times  
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1Ω (External)  
tr  
85  
ns  
ns  
td(off)  
200  
1 - Gate  
2,4 - Drain  
3 - Source  
tf  
50  
ns  
Qg(on)  
Qgs  
740  
220  
120  
nC  
nC  
nC  
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
RthJC  
RthCS  
0.12 °C/W  
°C/W  
0.15  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
-120  
- 480  
-1.4  
IS  
VGS = 0V  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = -100A, VGS = 0V, Note 1  
PLUS247TM Outline  
trr  
QRM  
IRM  
300 ns  
IF = - 60A, -di/dt = -100A/μs  
3.3  
25.6  
μC  
A
VR = -100V, VGS = 0V  
Note  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
Terminals: 1 - Gate  
2,4 - Drain  
3 - Source  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
IXTK120P20T  
IXTX120P20T  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
-120  
-100  
-80  
-60  
-40  
-20  
0
-300  
-250  
-200  
-150  
-100  
-50  
VGS = -10V  
VGS = -10V  
- 7V  
- 7V  
- 6V  
- 6V  
- 5V  
- 5V  
- 4V  
-2.5  
0
0
-5  
-10  
-15  
-20  
0
0
0
-0.5  
-1  
-1.5  
-2  
-3  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = - 60A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
-120  
-100  
-80  
-60  
-40  
-20  
0
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
VGS = -10V  
VGS = -10V  
- 7V  
- 6V  
I D = -120A  
I D = - 60A  
- 5V  
- 4V  
-1  
-2  
-3  
-4  
-5  
-6  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = - 60A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
-140  
-120  
-100  
-80  
-60  
-40  
-20  
0
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VGS = -10V  
TJ = 125ºC  
TJ = 25ºC  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
-40  
-80  
-120  
-160  
-200  
-240  
-280  
TC - Degrees Centigrade  
ID - Amperes  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXTK120P20T  
IXTX120P20T  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
-200  
-180  
-160  
-140  
-120  
-100  
-80  
300  
250  
200  
150  
100  
50  
TJ = - 40ºC  
25ºC  
125ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
-60  
-40  
-20  
0
0
-3.4  
-3.8  
-4.2  
-4.6  
-5  
-5.4  
-5.8  
0
-20  
-40  
-60  
-80  
-100 -120 -140 -160 -180 -200 -220  
ID - Amperes  
VGS - Volts  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
-300  
-250  
-200  
-150  
-100  
-50  
-10  
-9  
-8  
-7  
-6  
-5  
-4  
-3  
-2  
-1  
0
VDS = -100V  
I D = - 60A  
I G = -1mA  
TJ = 125ºC  
TJ = 25ºC  
0
-0.3  
-0.4  
-0.5  
-0.6  
-0.7  
-0.8  
-0.9  
-1.0  
-1.1  
-1.2  
-1.3  
-1.4  
0
100  
200  
300  
400  
500  
600  
700  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
100,000  
10,000  
1,000  
100  
-
1,000  
-100  
C
iss  
= 1 MHz  
f
RDS(on) Limit  
100µs  
1ms  
C
oss  
10  
-
10ms  
TJ = 150ºC  
TC = 25ºC  
C
rss  
Single Pulse  
100ms  
DC  
-
1
-
-
-
-
1,000  
1
10  
100  
0
-5  
-10  
-15  
-20  
-25  
-30  
-35  
-40  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTK120P20T  
IXTX120P20T  
Fig. 14. Resistive Turn-on Rise Time vs.  
Drain Current  
Fig. 13. Resistive Turn-on Rise Time vs.  
Junction Temperature  
180  
160  
140  
120  
100  
80  
180  
160  
140  
120  
100  
80  
RG = 1Ω, VGS = -10V  
DS = -100V  
RG = 1Ω, VGS = -10V  
V
VDS = -100V  
TJ = 125ºC  
I D = -120A  
I D = - 60A  
TJ = 25ºC  
60  
60  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
-60  
-70  
-80  
-90  
-100  
-110  
-120  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on Switching Times vs.  
Gate Resistance  
Fig. 16. Resistive Turn-off Switching Times vs.  
Junction Temperature  
700  
600  
500  
400  
300  
200  
100  
0
350  
70  
65  
60  
55  
50  
45  
40  
260  
t r  
t
d(on) - - - -  
TJ = 125ºC, VGS = -10V  
DS = -100V  
tf  
t
d(off) - - - -  
RG = 1Ω, VGS = -10V  
DS = -100V  
300  
250  
200  
150  
100  
50  
240  
220  
200  
180  
160  
140  
V
V
I D = -120A  
I D = - 60A  
I D = - 60A  
I D = - 120A  
0
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
1
2
3
4
5
6
7
8
9
10  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Resistive Turn-off Switching Times vs.  
Drain Current  
Fig. 18. Resistive Turn-off Switching Times vs.  
Gate Resistance  
500  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
80  
75  
70  
65  
60  
55  
50  
45  
40  
250  
240  
230  
220  
210  
200  
190  
180  
170  
tf  
t
d(off) - - - -  
TJ = 125ºC, VGS = -10V  
DS = -100V  
450  
400  
350  
300  
250  
200  
150  
100  
50  
tf  
t
d(off) - - - -  
RG = 1Ω, VGS = -10V  
DS = -100V  
V
V
I D = - 120A, - 60A  
TJ = 125ºC  
TJ = 25ºC  
0
-60  
-70  
-80  
-90  
ID - Amperes  
-100  
-110  
-120  
1
2
3
4
5
6
7
8
9
10  
RG - Ohms  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXTK120P20T  
IXTX120P20T  
Fig. 19. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.0001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: T_120P20T(A9) 10-25-11  
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