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IXTA1R6N100D2HV

型号：

IXTA1R6N100D2HV

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

6 页

PDF大小：

178 K

下载PDF手册
High Voltage  
Depletion Mode  
MOSFET  
VDSX = 1000V  
ID(on) > 1.6A  
IXTA1R6N100D2HV  
RDS(on) 10  
D
N-Channel  
G
TO-263HV  
S
G
S
Symbol  
VDSX  
Test Conditions  
Maximum Ratings  
D (Tab)  
TJ = 25C to 150C  
1000  
V
VGSX  
VGSM  
Continuous  
Transient  
20  
30  
V
V
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
PD  
TC = 25C  
100  
W
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
C  
C  
C  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Features  
•High Voltage package  
• High Blocking Voltage  
• Normally ON Mode  
Md  
Mounting Force  
10..65 / 2.2..14.6  
2.5  
N/lb  
g
Weight  
•International Standard Package  
• Molding Epoxies Meet UL94V-0  
Flammability Classification  
Advantages  
• Easy to Mount  
• Space Savings  
• High Power Density  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
1000  
- 2.5  
Typ.  
Max.  
Applications  
BVDSX  
VGS(off)  
IGSX  
VGS = - 5V, ID = 250A  
VDS = 25V, ID = 100A  
VGS = 20V, VDS = 0V  
VDS = VDSX, VGS = - 5V  
V
V
- 4.5  
• Audio Amplifiers  
• Start-Up Circuits  
• Protection Circuits  
• Ramp Generators  
• Current Regulators  
• Active Loads  
100 nA  
A  
IDSX(off)  
2
TJ = 125C  
25 A  
RDS(on)  
ID(on)  
VGS = 0V, ID = 0.8A, Note 1  
VGS = 0V, VDS = 50V, Note 1  
10   
1.6  
A
DS100778A(4/17)  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXTA1R6N100D2HV  
Symbol  
Test Conditions  
Characteristic Values  
TO-263 HV Outline  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 30V, ID = 0.8A, Note 1  
0.65  
1.10  
S
Ciss  
Coss  
Crss  
645  
43  
pF  
pF  
pF  
VGS = -10V, VDS = 25V, f = 1MHz  
11  
td(on)  
tr  
td(off)  
tf  
27  
65  
34  
41  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 5V, VDS = 500V, ID = 0.8A  
PIN: 1 - Gate  
2 - Source  
3 - Drain  
RG = 5(External)  
Qg(on)  
Qgs  
27.0  
1.6  
nC  
nC  
nC  
VGS = 5V, VDS = 500V, ID = 0.8A  
Qgd  
13.5  
RthJC  
1.25C/W  
Safe-Operating-Area Specification  
Characteristic Values  
Symbol  
SOA  
Test Conditions  
Min.  
Typ.  
Max.  
VDS = 800V, ID = 75mA, TC = 75C, Tp = 5s  
60  
W
V
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
Min.  
(TJ = 25C, Unless Otherwise Specified)  
Typ.  
Max.  
VSD  
IF = 1.6A, VGS = -10V, Note 1  
0.8  
1.3  
trr  
IRM  
QRM  
970  
9.96  
4.80  
ns  
A
μC  
IF = 1.6A, -di/dt = 100A/s  
VR = 100V, VGS = -10V  
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTA1R6N100D2HV  
Fig. 1. Output Characteristics @ TJ = 25oC  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
V
= 5V  
V
= 5V  
GS  
GS  
1V  
0V  
2V  
1V  
0V  
-1V  
-1V  
- 2V  
- 3V  
- 2V  
- 3V  
0
2
4
6
8
10  
12  
14  
0
10  
20  
30  
40  
50  
60  
70  
80  
VDS - Volts  
VDS - Volts  
Fig. 3. Output Characteristics @ TJ = 125oC  
Fig. 4. Drain Current @ TJ = 25oC  
1.6  
1.4  
1.2  
1
1E-01  
1E-02  
1E-03  
1E-04  
1E-05  
1E-06  
1E-07  
1E-08  
1E-09  
V
= 5V  
GS  
V
= - 3.25V  
- 3.50V  
GS  
1V  
0V  
- 3.75V  
- 4.00V  
-1V  
0.8  
0.6  
0.4  
0.2  
0
- 4.25V  
- 2V  
- 3V  
- 4.50V  
- 4.75V  
0
4
8
12  
16  
20  
24  
28  
32  
0
100 200 300 400 500 600 700 800 900 1000 1100 1200  
VDS - Volts  
VDS - Volts  
Fig. 5. Drain Current @ TJ = 100oC  
Fig. 6. Dynamic Resistance vs. Gate Voltage  
1.E+12  
1.E+11  
1.E+10  
1.E+09  
1.E+08  
1.E+07  
1.E+06  
1.E+05  
1.E+04  
1.E-01  
1.E-02  
1.E-03  
1.E-04  
1.E-05  
1.E-06  
1.E-07  
V
= 700V - 100V  
∆
DS  
VGS = - 3.50V  
- 3.75V  
- 4.00V  
- 4.25V  
T = 25oC  
J
- 4.50V  
- 4.75V  
T = 100oC  
J
0
100 200 300 400 500 600 700 800 900 1000 1100 1200  
VDS - Volts  
-4.8  
-4.6  
-4.4  
-4.2  
-4.0  
-3.8  
-3.6  
-3.4  
-3.2  
VGS - Volts  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXTA1R6N100D2HV  
Fig. 8. RDS(on) Normalized to ID = 0.8A Value  
vs. Drain Current  
Fig. 7. Normalized RDS(on) vs. Junction Temperature  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 0V  
5V  
V
= 0V  
GS  
GS  
I
= 0.8A  
D
T = 125oC  
J
T = 25oC  
J
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
0.5  
1
1.5  
2
2.5  
3
ID - Amperes  
TJ - Degrees Centigrade  
Fig. 10. Transconductance  
Fig. 9. Input Admittance  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
V
= 30V  
DS  
V
= 30V  
DS  
T
J
= - 40oC  
25oC  
125oC  
T
J
= 125oC  
25oC  
- 40oC  
0
0.5  
1
1.5  
2
2.5  
-4  
-3.5  
-3  
-2.5  
-2  
-1.5  
-1  
-0.5  
0
ID - Amperes  
VGS - Volts  
Fig. 11. Breakdown and Threshold Voltages  
vs. Junction Temperature  
Fig. 12. Forward Voltage Drop of Intrinsic Diode  
5
4
3
2
1
0
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
V
= -10V  
GS  
VGS(off) @ V = 25V  
DS  
BVDSX @ V = - 5V  
GS  
T
J
= 125oC  
T
J
= 25oC  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
VSD - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTA1R6N100D2HV  
Fig. 13. Capacitance  
Fig. 14. Gate Charge  
5
4
10,000  
1,000  
100  
10  
= 1 MHz  
f
V
= 500V  
DS  
I
I
= 0.8A  
D
G
3
C
= 1mA  
iss  
2
1
0
C
C
oss  
-1  
-2  
-3  
-4  
-5  
rss  
1
0
5
10  
15  
20  
25  
0
5
10  
15  
20  
25  
30  
35  
40  
VDS - Volts  
QG - NanoCoulombs  
Fig. 16. Forward-Bias Safe Operating Area  
@ TC = 75oC  
Fig. 15. Forward-Bias Safe Operating Area  
@ TC = 25oC  
10  
10  
R
DS(on)  
Limit  
R
DS(on)  
Limit  
25μs  
100μs  
1
1
100μs  
1ms  
1ms  
10ms  
10ms  
100ms  
0.1  
0.1  
DC  
100ms  
T
= 150oC  
= 75oC  
DC  
T
= 150oC  
= 25oC  
J
J
T
C
T
C
Single Pulse  
Single Pulse  
0.01  
0.01  
10  
100  
1,000  
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
Fig. 17. Maximum Transient Thermal Impedance  
hvjv  
2.00  
1.00  
0.10  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_1R6N100D2(2C)8-24-09  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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