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IXTH150N17T

型号：

IXTH150N17T

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

156 K

下载PDF手册
TrenchHVTM Power  
MOSFET  
VDSS = 175V  
ID25 = 150A  
RDS(on) ≤ 12mΩ  
IXTH150N17T  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-247  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
175  
175  
V
V
G
VDGR  
(TAB)  
D
S
VGSM  
Transient  
± 30  
V
ID25  
ILRMS  
IDM  
TC = 25°C  
150  
75  
A
A
A
G = Gate  
S = Source  
D
= Drain  
Lead Current Limit, RMS  
TC = 25°C, pulse width limited by TJM  
TAB = Drain  
400  
IA  
TC = 25°C  
TC = 25°C  
75  
A
J
EAS  
1.5  
Features  
dV/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C  
TC = 25°C  
15  
V/ns  
W
z International standard package  
z Avalanche rated  
z 175°C Operating Temperature  
z High current handling capability  
830  
TJ  
-55 ... +175  
175  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +175  
TL  
Tsold  
1.6mm (0.062in.) from case for 10s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
Advantages  
z
Easy to mount  
Space savings  
High power density  
Md  
Mounting torque  
1.13 / 10  
6
Nm/lb.in.  
g
z
Weight  
z
Applications  
Symbol  
Test Conditions  
Characteristic Values  
z DC-DC converters  
z Battery chargers  
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
z Switched-mode and resonant-mode  
power supplies  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 1mA  
VGS = ± 20V, VDS = 0V  
175  
2.5  
V
V
5.0  
z DC choppers  
z AC motor drives  
±200 nA  
μA  
z Uninterruptible power supplies  
z High speed power switching  
applications  
IDSS  
VDS = VDSS  
VGS = 0V  
5
TJ = 150°C  
250 μA  
12 mΩ  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Notes 1  
10  
DS99831B(12/08)  
© 2008 IXYS CORPORATION, All rights reserved  
IXTH150N17T  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
TO-247 (IXTH) Outline  
(TJ = 25°C, unless otherwise specified)  
gfs  
VDS = 10V, ID = 60A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
75  
118  
S
Ciss  
Coss  
Crss  
9800  
1110  
60  
pF  
pF  
pF  
∅ P  
1
2
3
td(on)  
tr  
td(off)  
tf  
22  
30  
58  
30  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
e
RG = 2Ω (External)  
Terminals: 1 - Gate  
2 - Drain  
Qg(on)  
Qgs  
155  
40  
nC  
nC  
nC  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
VGS = 10V, VDS = 0.5 • VDSS, ID = 25A  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Qgd  
47  
RthJC  
RthCH  
0.18 °C/W  
°C/W  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
0.21  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
Source-Drain Diode  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
150  
400  
1.2  
∅P 3.55  
Q
3.65  
.140 .144  
5.89  
6.40 0.232 0.252  
IS  
VGS = 0V  
A
A
V
R
4.32  
5.49 .170 .216  
ISM  
VSD  
Repetitive, Pulse width limited by TJM  
IF = 50A, VGS = 0V, Note 1  
IF = 75A, VGS = 0V  
trr  
120  
1.05  
17.5  
ns  
A
IRM  
QRM  
-di/dt = 200A/μs  
VR = 85V  
nC  
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTH150N17T  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
325  
300  
275  
250  
225  
200  
175  
150  
125  
100  
75  
160  
140  
120  
100  
80  
VGS = 10V  
VGS = 10V  
8V  
8V  
7V  
7V  
6V  
6V  
5V  
60  
40  
50  
20  
5V  
25  
0
0
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
0
2
4
6
8
10  
12  
14  
16  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 75A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 150ºC  
160  
140  
120  
100  
80  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
VGS = 10V  
VGS = 10V  
8V  
7V  
6V  
5V  
I D = 150A  
I D = 75A  
60  
40  
20  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 75A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
4.0  
VGS = 10V  
External Lead Current Limit  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
15V  
- - - -  
TJ = 175ºC  
TJ = 25ºC  
0
40  
80  
120  
160  
200  
240  
280  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
ID - Amperes  
TC - Degrees Centigrade  
© 2008 IXYS CORPORATION, All rights reserved  
IXTH150N17T  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
160  
140  
120  
100  
80  
160  
140  
120  
100  
80  
TJ = - 40ºC  
25ºC  
TJ = 150ºC  
25ºC  
- 40ºC  
150ºC  
60  
60  
40  
40  
20  
20  
0
0
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
0
20  
40  
60  
80  
100  
120  
140  
160  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
300  
270  
240  
210  
180  
150  
120  
90  
VDS = 85V  
I
D = 25A  
I G = 10mA  
TJ = 150ºC  
TJ = 25ºC  
60  
30  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1.3  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
100,000  
10,000  
1,000  
100  
1.000  
0.100  
0.010  
0.001  
f = 1 MHz  
C
iss  
C
oss  
C
rss  
10  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
0
5
10  
15  
20  
25  
30  
35  
40  
Pulse Width - Seconds  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: T_150N17T(8W)12-02-08-A  
IXTH150N17T  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
RG = 2ꢀ  
TJ = 25ºC  
VGS = 10V  
VDS = 85V  
RG = 2Ω  
VGS = 10V  
VDS = 85V  
I D = 75A  
I D = 37A  
TJ = 125ºC  
35 40 45 50 55 60 65 70 75 80 85 90 95 100  
ID - Amperes  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
TJ - Degrees Centigrade  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
38  
36  
34  
32  
30  
28  
26  
24  
22  
20  
95  
50  
45  
40  
35  
30  
25  
20  
15  
34  
32  
30  
28  
26  
24  
22  
20  
tf  
td(off) - - - -  
tr  
td(on) - - - -  
TJ = 125ºC, VGS = 10V  
90  
85  
80  
75  
70  
65  
60  
55  
50  
RG = 2ꢀ, VGS = 10V  
VDS = 85V  
VDS = 85V  
I D = 37A, 75A  
I D = 37A  
I D = 75A  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
2
3
4
5
6
7
8
9
10  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
240  
220  
200  
180  
160  
140  
120  
100  
80  
38  
36  
34  
32  
30  
28  
26  
24  
22  
20  
95  
90  
85  
80  
75  
70  
65  
60  
55  
50  
tf  
td(off) - - - -  
TJ = 125ºC, VGS = 10V  
tf  
td(off) - - - -  
TJ = 125ºC  
TJ = 25ºC  
RG = 2ꢀ, VGS = 10V  
VDS = 85V  
VDS = 85V  
I D = 37A  
I D = 75A  
TJ = 25ºC  
TJ = 25ºC  
60  
35 40 45 50 55 60 65 70 75 80 85 90 95 100  
2
3
4
5
6
7
8
9
10  
ID - Amperes  
RG - Ohms  
© 2008 IXYS CORPORATION, All rights reserved  
IXYS REF: T_150N17T(8W)12-02-08-A  
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