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IXTC110N055T

型号：

IXTC110N055T

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

146 K

下载PDF手册
Preliminary Technical Information  
TrenchMVTM  
Power MOSFET  
IXTC110N055T  
VDSS = 55  
ID25 = 78  
RDS(on) ≤ 9.0 mΩ  
V
A
(Electrically Isolated Back Surface)  
N-Channel Enhancement Mode  
Avalanche Rated  
Symbol  
Test Conditions  
Maximum Ratings  
ISOPLUS220 (IXTC)  
E153432  
VDSS  
VDGR  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C; RGS = 1 MΩ  
55  
55  
V
V
VGSM  
Transient  
20  
V
ID25  
ILRMS  
IDM  
TC = 25°C  
Package Current Limit, RMS  
TC = 25°C, pulse width limited by TJM  
78  
75  
600  
A
A
A
G
D
S
Isolated back surface  
G = Gate  
S = Source  
D = Drain  
IAR  
EAS  
TC = 25°C  
TC = 25°C  
25  
500  
A
mJ  
dv/dt  
PD  
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS  
TJ ≤ 175°C, RG = 5 Ω  
3
V/ns  
Features  
ꢀUltra-low On Resistance  
ꢀUnclamped Inductive Switching (UIS)  
rated  
TC = 25°C  
100  
W
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
ꢀLow package inductance  
- easy to drive and to protect  
ꢀ175 °C Operating Temperature  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
Advantages  
ꢀ
Easy to mount  
Space savings  
High power density  
VISOL  
FC  
50/60 Hz, t = 1 minute, IISOL < 1 mA, RMS  
Mounting force  
2500  
11..65/2.5..15  
2
V
N/lb.  
g
ꢀ
ꢀ
Weight  
Applications  
ꢀ
Automotive  
- Motor Drives  
- High Side Switch  
- 12VBattery  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
- ABS Systems  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 μA  
VDS = VGS, ID = 250 μA  
55  
V
V
ꢀ
DC/DC Converters and Off-line UPS  
Primary- Side Switch  
High Current Switching  
Applications  
ꢀ
2.0  
4.0  
ꢀ
VGS  
=
20 V, VDS = 0 V  
200 nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
5 μA  
250 μA  
TJ = 150°C  
RDS(on)  
VGS = 10 V, ID = 25 A, Note 1  
4.3  
9.0mΩ  
DS99673(02/07)  
© 2007 IXYS CORPORATION All rights reserved  
IXTC110N055T  
Symbol  
gfs  
Test Conditions  
Characteristic Values  
ISOPLUS220 (IXTC) Outline  
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
VDS = 10 V, ID = 60 A, Note 1  
75  
120  
S
Ciss  
Coss  
Crss  
3080  
1270  
285  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
36  
62  
53  
53  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = 25 A  
RG = 5 Ω (External)  
1.Gate 2. Drain  
3.Source  
Note: Bottom heatsink (Pin 4) is  
electrically isolated from Pins 1,2, and 3.  
Qg(on)  
Qgs  
67  
42  
46  
nC  
nC  
nC  
VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A  
Qgd  
RthJC  
RthCS  
1.5°C/W  
°C/W  
0.25  
Source-Drain Diode  
Characteristic Values  
TJ = 25°C unless otherwise specified)  
Symbol  
IS  
Test Conditions  
Min. Typ.  
Max.  
VGS = 0 V  
220  
A
A
ISM  
VSD  
trr  
Pulse width limited by TJM  
IF = 25 A, VGS = 0 V, Note 1  
600  
1.0  
V
IF = 25 A, -di/dt = 100 A/μs  
70  
ns  
VR = 30 V, VGS = 0 V  
Notes: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %;  
2. Drain and Source Kelvin contacts must be located less than 5 mm from  
the plastic body.  
PRELIMINARYTECHNICALINFORMATION  
The product presented herein is under development. The Technical Specifications offered  
are derived from data gathered during objective characterizations of preliminary engineering  
lots; but also may yet contain some information supplied during a pre-production design  
evaluation. IXYS reserves the right to change limits, test conditions, and dimensions  
without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered  
byoneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
6,771,478B2 7,071,537  
7,005,734B2 7,157,338B2  
7,063,975B2  
IXTC110N055T  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
350  
300  
250  
200  
150  
100  
50  
V
= 10V  
GS  
V
= 10V  
GS  
9V  
8V  
7V  
9V  
8V  
7V  
6V  
6V  
5V  
5V  
0
0
2
4
6
8
10  
12  
14  
16  
18  
20  
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 55A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 150ºC  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 10V  
GS  
V
= 10V  
GS  
9V  
8V  
7V  
I
= 110A  
D
6V  
5V  
I
= 55A  
D
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 55A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
3
2.8  
2.6  
2.4  
2.2  
2
80  
70  
60  
50  
40  
30  
20  
10  
0
V
= 10V  
15V  
GS  
T = 175ºC  
J
- - - -  
1.8  
1.6  
1.4  
1.2  
1
T = 25ºC  
J
0.8  
0
40  
80  
120  
160  
200  
240  
280  
320  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
ID - Amperes  
TC - Degrees Centigrade  
© 2007 IXYS CORPORATION All rights reserved  
IXTC110N055T  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
180  
160  
140  
120  
100  
80  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
T
J
= - 40ºC  
T
J
= -40ºC  
25ºC  
150ºC  
25ºC  
150ºC  
60  
40  
20  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
3
3.5  
4
4.5  
5
5.5  
6
6.5  
7
1.8  
40  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
300  
270  
240  
210  
180  
150  
120  
90  
10  
9
8
7
6
5
4
3
2
1
0
V
= 27.5V  
DS  
I
I
= 25A  
D
G
= 10mA  
T
J
= 150ºC  
60  
T
= 25ºC  
J
30  
0
0
10  
20  
30  
40  
50  
60  
70  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
QG - NanoCoulombs  
VSD - Volts  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
10,000  
1,000  
100  
10.00  
1.00  
0.10  
0.01  
f = 1 MHz  
C
iss  
C
C
oss  
rss  
0
5
10  
15  
20  
25  
30  
35  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTC110N055T  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
R
V
V
= 5  
Ω
G
= 10V  
GS  
DS  
T = 25ºC  
J
= 27.5V  
R
V
V
= 5  
Ω
G
= 10V  
GS  
DS  
= 27.5V  
I
= 40A  
D
T = 125ºC  
J
I
= 20A  
D
20  
22  
24  
26  
28  
30  
32  
34  
36  
38  
40  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
100  
38.0  
35.5  
33.0  
30.5  
28.0  
25.5  
23.0  
20.5  
18.0  
26.0  
25.5  
25.0  
24.5  
24.0  
23.5  
23.0  
50.0  
47.5  
45.0  
42.5  
40.0  
37.5  
35.0  
t r  
td(on)  
- - - -  
t f  
R
td(off)  
- - - -  
90  
80  
70  
60  
50  
40  
30  
20  
TJ = 125ºC, V = 10V  
GS  
= 5 , V = 10V  
Ω
G
GS  
I
= 20A  
D
V
= 27.5V  
DS  
V
= 27.5V  
DS  
I
= 40A  
D
I
= 40A  
D
I
= 20A  
D
5
7
9
11 13 15 17 19 21 23 25 27 29 31 33  
RG - Ohms  
25 35 45 55 65 75 85 95 105 115 125  
TJ - Degrees Centigrade  
Fig. 18. Resistive Turn-off  
Fig. 17. Resistive Turn-off  
Switching Times vs. Gate Resistance  
Switching Times vs. Drain Current  
120  
110  
100  
90  
180  
150  
120  
90  
27  
26  
25  
24  
23  
55.0  
52.5  
50.0  
47.5  
45.0  
42.5  
40.0  
37.5  
35.0  
t f  
td(off)  
- - - -  
t f  
R
td(off)  
- - - -  
T = 125ºC, VGS = 10V  
J
= 5 , VGS = 10V  
Ω
G
VDS = 27.5V  
VDS = 27.5V  
80  
TJ = 125ºC  
I
= 20A  
D
70  
I
= 40A  
D
60  
50  
T = 25ºC  
J
40  
60  
30  
20  
30  
5
7
9
11 13 15 17 19 21 23 25 27 29 31 33  
RG - Ohms  
20 22  
24 26 28  
30 32 34 36  
38 40  
ID - Amperes  
© 2007 IXYS CORPORATION All rights reserved  
IXYS REF: T_110N055T (3V) 02-06-07-A.xls  
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