IXTA1N300P3HV
IXTH1N300P3
Symbol
Test Conditions
Characteristic Values
TO-247 Outline
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
D
A
A2
A
gfs
VDS = 50V, ID = 0.5A, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
0.4
0.7
S
B
E
Q
Ciss
Coss
Crss
895
48
pF
pF
pF
S
D2
P1
R
D1
D
4
17
1
2
3
L1
C
td(on)
tr
td(off)
tf
22
35
78
60
ns
ns
ns
ns
E1
Resistive Switching Times
VGS = 10V, VDS = 500V, ID = 0.5 • ID25
RG = 20 (External)
L
A1
b
C
b2
1 - Gate
b4
e
2,4 - Drain
3 - Source
Qg(on)
Qgs
30.6
4.0
nC
nC
nC
VGS = 10V, VDS = 1kV, ID = 0.5 • ID25
Qgd
15.7
RthJC
RthCS
0.64 C/W
C/W
TO-247
0.21
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
IS
VGS = 0V
1
A
A
ISM
VSD
trr
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
4
1.5
V
IF = 1A, -di/dt = 100A/μs, VR = 100V
1.8
μs
Note:
1. Pulse test, t 300s, duty cycle, d 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
TO-263HV Outline
E
A
L1
C2
D1
D
H
3
E1
1
2
A1
L4
L
L3
GAUGE
PLANE
b2
b
e2
e1
C
PIN: 1 - Gate
08
2 - Source
3 - Drain
A2
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
