请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXTP8N70X2M

型号：

IXTP8N70X2M

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

142 K

下载PDF手册
Advance Technical Information  
X2-Class  
Power MOSFET  
VDSS = 700V  
ID25 = 8A  
IXTP8N70X2M  
RDS(on) 550m  
(Electrically Isolated Tab)  
N-Channel Enhancement Mode  
OVERMOLDED  
TO-220  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
700  
700  
V
V
VDGR  
TJ = 25C to 150C, RGS = 1M  
G
D
S
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
G = Gate  
S = Source  
D = Drain  
ID25  
IDM  
TC = 25C, Limited by TJM  
TC = 25C, Pulse Width Limited by TJM  
8
A
A
16  
IA  
TC = 25C  
TC = 25C  
4
A
EAS  
250  
mJ  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
50  
32  
V/ns  
W
Features  
International Standard Package  
Plastic Overmolded Tab  
Low RDS(ON) and QG  
Avalanche Rated  
Low Package Inductance  
TJ  
-55 ... +150  
150  
C  
C  
C  
TJM  
Tstg  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Advantages  
Md  
Mounting Torque  
1.13 / 10  
2.5  
Nm/lb.in  
g
Weight  
High Power Density  
Easy to Mount  
Space Savings  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
Robotics and Servo Controls  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
700  
V
V
3.0  
5.0  
100 nA  
IDSS  
10 A  
TJ = 125C  
250 A  
RDS(on)  
VGS = 10V, ID = 4A, Note 1  
550 m  
DS100755A(1/17)  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXTP8N70X2M  
Symbol  
Test Conditions  
Characteristic Values  
OVERMOLDED TO-220  
(IXTP...M)  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
gfs  
VDS = 10V, ID = 4A, Note 1  
Gate Input Resistance  
4.8  
8.0  
S
RGi  
6
Ciss  
Coss  
Crss  
800  
495  
2.2  
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
1
2
3
Effective Output Capacitance  
Co(er)  
Co(tr)  
43  
pF  
pF  
Energy related  
Time related  
VGS = 0V  
VDS = 0.8 • VDSS  
129  
td(on)  
tr  
td(off)  
tf  
24  
28  
53  
24  
ns  
ns  
ns  
ns  
Resistive Switching Times  
GS = 10V, VDS = 0.5 • VDSS, ID = 4A  
V
RG = 30(External)  
Qg(on)  
Qgs  
12.0  
3.1  
nC  
nC  
nC  
Terminals: 1 - Gate  
2 - Drain  
VGS = 10V, VDS = 0.5 • VDSS, ID = 4A  
3 - Source  
Qgd  
4.4  
RthJC  
RthCS  
3.90 C/W  
C/W  
0.50  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
IS  
VGS = 0V  
8
A
A
ISM  
VSD  
Repetitive, pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
32  
1.4  
V
trr  
QRM  
IRM  
200  
1.65  
16.3  
ns  
IF = 4A, -di/dt = 100A/μs  
μC  
VR = 100V  
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXTP8N70X2M  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
8
7
6
5
4
3
2
1
0
18  
16  
14  
12  
10  
8
V
= 10V  
8V  
V
= 10V  
8V  
GS  
GS  
7V  
6V  
7V  
6
6V  
5V  
4
5V  
2
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
0
4
8
12  
16  
20  
24  
28  
32  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 4A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
8
7
6
5
4
3
2
1
0
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
V
= 10V  
7V  
GS  
V
= 10V  
GS  
6V  
I
= 8A  
D
I
= 4A  
D
5V  
4V  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
1
2
3
4
5
6
7
8
9
10  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 6. Normalized Breakdown & Threshold Voltages  
vs. Junction Temperature  
Fig. 5. RDS(on) Normalized to ID = 4A Value vs.  
Drain Current  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
V
= 10V  
GS  
T = 125ºC  
J
BV  
DSS  
T = 25ºC  
J
V
GS(th)  
100  
0
2
4
6
8
10  
12  
14  
16  
18  
-60  
-40  
-20  
0
20  
40  
60  
80  
120  
140  
160  
TJ - Degrees Centigrade  
ID - Amperes  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXTP8N70X2M  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
10  
9
8
7
6
5
4
3
2
1
0
14  
12  
10  
8
T
J
= - 40ºC  
25ºC  
125ºC  
T
J
= 125ºC  
25ºC  
6
- 40ºC  
4
2
0
0
1
2
3
4
5
6
7
8
9
10  
11  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
25  
20  
15  
10  
5
10  
8
V
= 350V  
DS  
I
I
= 4A  
D
G
= 10mA  
6
4
T
J
= 125ºC  
T
J
= 25ºC  
2
0
0
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
0
2
4
6
8
10  
12  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Output Capacitance Stored Energy  
Fig. 11. Capacitance  
10  
9
8
7
6
5
4
3
2
1
0
10000  
1000  
100  
10  
C
iss  
C
C
oss  
rss  
1
= 1 MHz  
f
0.1  
0
100  
200  
300  
400  
500  
600  
700  
1
10  
100  
1000  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTP8N70X2M  
Fig. 14. Maximum Transient Thermal Impedance  
Fig. 13. Forward-Bias Safe Operating Area  
10  
100  
10  
100μs  
25μs  
1ms  
10ms  
R
DS(  
on  
Limit  
)
100ms  
1s  
DC  
1
1
0.1  
0.1  
0.01  
T = 150ºC  
J
T
C
= 25ºC  
Single Pulse  
0.01  
0.00001 0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
1
10  
100  
1,000  
VDS - Volts  
Pulse Width - Seconds  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_8N70X2(X2-R2T5) 1-19-17  
厂商 型号 描述 页数 下载

IXYS

 		IXTA-200N085T N沟道增强模式额定雪崩[ N-Channel Enhancement Mode Avalanche Rated ] 5 页

LITTELFUSE

 		IXTA02N250 [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN ] 5 页

IXYS

 		IXTA02N250HV [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC PACKAGE-3 ] 5 页

LITTELFUSE

 		IXTA02N250HV [ Power Field-Effect Transistor, ] 6 页

IXYS

 		IXTA02N250HV-TRL [ Power Field-Effect Transistor, ] 5 页

IXYS

 		IXTA02N450HV 高电压功率MOSFET[ High Voltage Power MOSFETs ] 5 页

IXYS

 		IXTA05N100 高电压的MOSFET[ High Voltage MOSFET ] 4 页

IXYS

 		IXTA05N100-TRL [ Power Field-Effect Transistor, ] 5 页

LITTELFUSE

 		IXTA05N100HVTRL [ Power Field-Effect Transistor, 0.75A I(D), 1000V, 17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 2 PIN ] 4 页

IXYS

 		IXTA05N100P [ Fast Intrinsic Diode ] 7 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.220227s