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IXTH160N075T

型号：

IXTH160N075T

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

178 K

下载PDF手册
Preliminary Technical Information  
TrenchMVTM  
Power MOSFET  
IXTH160N075T  
IXTQ160N075T  
VDSS = 75  
ID25 = 160  
RDS(on) ≤ 6.0 mΩ  
V
A
N-ChannelEnhancementMode  
AvalancheRated  
Symbol  
TestConditions  
Maximum Ratings  
TO-247 (IXTH)  
VDSS  
VDGR  
TJ = 25°C to 175°C  
75  
75  
V
TJ = 25°C to 175°C; RGS = 1 MΩ  
V
VGSM  
Transient  
± 20  
V
ID25  
ILRMS  
IDM  
TC = 25°C  
Lead Current Limit, RMS  
TC = 25°C, pulse width limited by TJM  
160  
75  
430  
A
A
A
D (TAB)  
G
D
S
IAR  
EAS  
TC = 25°C  
TC = 25°C  
25  
750  
A
mJ  
TO-3P (IXTQ)  
dv/dt  
IS ≤ IDM, di/dt ≤ 100 A/ms, VDD ≤ VDSS  
TJ ≤ 175°C, RG = 5 Ω  
3
V/ns  
PD  
TC = 25°C  
360  
W
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
D (TAB)  
G
D
S
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
Md  
Mounting torque (TO-3P, TO-220)  
1.13 / 10 Nm/lb.in.  
Features  
Weight  
TO-3P  
TO-247  
5.5  
6
g
g
ꢀUltra-low On Resistance  
ꢀUnclamped Inductive Switching (UIS)  
rated  
ꢀLow package inductance  
- easy to drive and to protect  
ꢀ175 °C Operating Temperature  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
Advantages  
ꢀ
Easy to mount  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 μA  
VDS = VGS, ID = 250 μA  
VGS = ± 20 V, VDS = 0 V  
75  
V
V
ꢀ
Space savings  
ꢀ
High power density  
2.0  
4.0  
± 200  
nA  
Applications  
ꢀ
Automotive  
IDSS  
VDS = VDSS  
VGS = 0 V  
5
μA  
μA  
- Motor Drives  
- 42V Power Bus  
TJ = 150°C  
250  
- ABS Systems  
RDS(on)  
VGS = 10 V, ID = 25 A, Notes 1, 2  
4.8  
6.0 mΩ  
ꢀ
DC/DC Converters and Off-line UPS  
ꢀ
Primary Switch for 24V and 48V  
Systems  
ꢀ
High Current Switching  
Applications  
DS99690 (11/06)  
© 2006 IXYS CORPORATION All rights reserved  
IXTH160N075T  
IXTQ160N075T  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 AD Outline  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
VDS= 10 V; ID = 60 A, Note 1  
65  
100  
S
Ciss  
Coss  
Crss  
4950  
790  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
1
2
3
145  
td(on)  
tr  
td(off)  
tf  
Resistibve Switching Times  
VGS = 10 V, VDS = 0.5 VDSS, ID = 25 A  
RG = 5 Ω (External)  
29  
64  
60  
60  
ns  
ns  
ns  
ns  
Terminals: 1 - Gate  
3 - Source  
2 - Drain  
Tab - Drain  
Qg(on)  
Qgs  
112  
30  
nC  
nC  
nC  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Qgd  
30  
RthJC  
RthCH  
0.42°C/W  
°C/W  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
0.25  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
Source-Drain Diode  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
Symbol  
Test Conditions  
Characteristic Values  
.780 .800  
.177  
TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
∅P 3.55  
Q
3.65  
.140 .144  
IS  
VGS = 0 V  
160  
A
A
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
ISM  
VSD  
trr  
Pulse width limited by TJM  
IF = 25 A, VGS = 0 V, Note 1  
430  
1.0  
V
TO-3P (IXTQ) Outline  
IF = 25 A, -di/dt = 100 A/μs  
80  
ns  
VR = 40 V, VGS = 0 V  
Notes: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %;  
2. On through-hole packages, RDS(on) Kelvin test contact  
location must be 5 mm or less from the package body.  
Pins: 1 - Gate  
2 - Drain  
3 - Source 4, TAB - Drain  
PRELIMINARYTECHNICALINFORMATION  
The product presented herein is under development. The Technical Specifications  
offered are derived from data gathered during objective characterizations of preliminary  
engineering lots; but also may yet contain some information supplied during a pre-  
production design evaluation. IXYS reserves the right to change limits, test conditions,  
and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
oneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
6771478B2  
7,005,734B2  
7,063,975B2  
7,071,537  
IXTH160N075T  
IXTQ160N075T  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
160  
140  
120  
100  
80  
280  
240  
200  
160  
120  
80  
V
= 10V  
GS  
V
= 10V  
GS  
9V  
8V  
7V  
9V  
8V  
7V  
6V  
6V  
5V  
60  
40  
40  
20  
5V  
0
0
0
0
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
0
1
2
3
4
5
6
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 80A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 150ºC  
160  
140  
120  
100  
80  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 10V  
GS  
V
= 10V  
GS  
9V  
8V  
7V  
I
= 160A  
D
6V  
5V  
I
= 80A  
D
60  
40  
20  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
1.8  
2
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 80A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
2.8  
2.6  
2.4  
2.2  
2
140  
120  
100  
80  
V
= 10V  
GS  
External Lead Current Limit for TO-263 (7-Lead)  
T = 175ºC  
15V - - - -  
J
1.8  
1.6  
1.4  
1.2  
1
External Lead Current Limit for TO-3P, TO-220, & TO-263  
60  
40  
20  
T = 25ºC  
J
0.8  
0.6  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
50  
100  
150  
200  
250  
300  
ID - Amperes  
TC - Degrees Centigrade  
© 2006 IXYS CORPORATION All rights reserved  
IXTH160N075T  
IXTQ160N075T  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
270  
240  
210  
180  
150  
120  
90  
140  
120  
100  
80  
T
J
= - 40ºC  
25ºC  
T
J
= -40ºC  
25ºC  
150ºC  
150ºC  
60  
40  
60  
20  
30  
0
0
0
50  
100  
150  
200  
250  
300  
3
3.5  
4
4.5  
5
5.5  
6
6.5  
7
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
270  
240  
210  
180  
150  
120  
90  
V
= 37V  
DS  
I
I
= 25A  
D
G
= 10mA  
T
J
= 150ºC  
T
J
= 25ºC  
60  
30  
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
1.2  
1.3  
0
10 20 30 40 50 60 70 80 90 100 110 120  
QG - NanoCoulombs  
VSD - Volts  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
10,000  
1,000  
100  
1.00  
0.10  
0.01  
f = 1 MHz  
C
iss  
C
C
oss  
rss  
0
5
10  
15  
20  
25  
30  
35  
40  
0.0001  
0.001  
0.01  
0.1  
1
10  
VDS - Volts  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTH160N075T  
IXTQ160N075T  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
75  
70  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
80  
70  
60  
50  
40  
30  
20  
10  
R
= 5  
Ω
G
V
V
= 10V  
= 38V  
GS  
DS  
T = 25ºC  
J
R
V
V
= 5  
Ω
G
= 10V  
= 38V  
GS  
DS  
I
= 50A  
D
I
= 25A  
D
T = 125ºC  
J
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
25  
30  
35  
40  
45  
50  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
100  
42  
40  
38  
36  
34  
32  
30  
28  
26  
24  
62  
85  
82  
79  
76  
73  
70  
67  
64  
61  
58  
55  
t r  
td(on)  
- - - -  
60  
58  
56  
54  
52  
50  
48  
46  
44  
42  
90  
80  
70  
60  
50  
40  
30  
20  
10  
TJ = 125ºC, V = 10V  
GS  
t f  
R
td(off)  
- - - -  
V
= 38V  
DS  
I
= 25A  
D
= 5 , V = 10V  
Ω
G
GS  
V
= 38V  
DS  
I
= 25A  
D
I
= 50A  
D
I
= 50A  
D
4
6
8
10  
12  
14  
16  
18  
20  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
62  
60  
58  
56  
54  
52  
50  
48  
46  
44  
42  
90  
86  
82  
78  
74  
70  
66  
62  
58  
54  
50  
130  
120  
110  
100  
90  
230  
210  
190  
170  
150  
130  
110  
90  
t f  
td(off)  
- - - -  
T
= 125ºC  
J
TJ = 125ºC, VGS = 10V  
VDS = 38V  
t f  
R
td(off) - - - -  
= 5 , VGS = 10V  
I
= 25A  
Ω
G
D
T
= 25ºC  
J
VDS = 38V  
I D = 50A  
80  
70  
T
= 25ºC  
J
60  
50  
70  
T
= 125ºC  
40  
J
40  
50  
25  
30  
35  
45  
50  
4
6
8
10  
12  
14  
16  
18  
20  
I D - Amperes  
RG - Ohms  
IXYS REF: T_160N075T (4V) 6-16-06.xls  
© 2006 IXYS CORPORATION All rights reserved  
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